scholarly journals Front Cover: Tailoring the Molecular Skeleton of Aza‐BODIPYs to Design Photostable Red‐Light‐Emitting Laser Dyes (ChemPhotoChem 2/2019)

ChemPhotoChem ◽  
2019 ◽  
Vol 3 (2) ◽  
pp. 61-61
Author(s):  
Alejandro Prieto‐Castañeda ◽  
Edurne Avellanal‐Zaballa ◽  
Leire Gartzia‐Rivero ◽  
Luis Cerdán ◽  
Antonia R. Agarrabeitia ◽  
...  
ChemPhotoChem ◽  
2018 ◽  
Vol 3 (2) ◽  
pp. 75-85 ◽  
Author(s):  
Alejandro Prieto‐Castañeda ◽  
Edurne Avellanal‐Zaballa ◽  
Leire Gartzia‐Rivero ◽  
Luis Cerdán ◽  
Antonia R. Agarrabeitia ◽  
...  

ChemPhotoChem ◽  
2019 ◽  
Vol 3 (2) ◽  
pp. 63-63
Author(s):  
Alejandro Prieto‐Castañeda ◽  
Edurne Avellanal‐Zaballa ◽  
Leire Gartzia‐Rivero ◽  
Luis Cerdán ◽  
Antonia R. Agarrabeitia ◽  
...  

2020 ◽  
Vol 19 (11) ◽  
pp. 1224-1229 ◽  
Author(s):  
Alim Abdurahman ◽  
Timothy J. H. Hele ◽  
Qinying Gu ◽  
Jiangbin Zhang ◽  
Qiming Peng ◽  
...  

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Lung-Chien Chen ◽  
Yi-Tsung Chang ◽  
Ching-Ho Tien ◽  
Yu-Chun Yeh ◽  
Zong-Liang Tseng ◽  
...  

AbstractThis work presents a method for obtaining a color-converted red light source through a combination of a blue GaN light-emitting diode and a red fluorescent color conversion film of a perovskite CsPbI3/TOPO composite. High-quality CsPbI3 quantum dots (QDs) were prepared using the hot-injection method. The colloidal QD solutions were mixed with different ratios of trioctylphosphine oxide (TOPO) to form nanowires. The color conversion films prepared by the mixed ultraviolet resin and colloidal solutions were coated on blue LEDs. The optical and electrical properties of the devices were measured and analyzed at an injection current of 50 mA; it was observed that the strongest red light intensity was 93.1 cd/m2 and the external quantum efficiency was 5.7% at a wavelength of approximately 708 nm when CsPbI3/TOPO was 1:0.35.


2017 ◽  
Vol 41 (18) ◽  
pp. 9826-9839 ◽  
Author(s):  
Boddula Rajamouli ◽  
Rachna Devi ◽  
Abhijeet Mohanty ◽  
Venkata Krishnan ◽  
Sivakumar Vaidyanathan

The red light emitting diode (LED) was fabricated by using europium complexes with InGaN LED (395 nm) and shown digital images, corresponding CIE color coordinates (red region) as well as obtained highest quantum yield of the thin film (78.7%).


2011 ◽  
Vol 40 (4) ◽  
pp. 417-419 ◽  
Author(s):  
Qing Li ◽  
Jiuyan Li ◽  
Lijun Deng ◽  
Qian Wang ◽  
Zhanxian Gao ◽  
...  

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