Crystallization kinetics of lithium–aluminum–germanium–phosphate glass doped with MgO using a non-isothermal method

ABSTRACTCrystallization kinetics of a simulated high-level waste (HLW) glass were measured and modelled. Kinetics of acmite growth in the standard HW39–4 glass were measured using the isothermal method. A time-temperature-transformation (TTT) diagram was generated from these data. Classical glass-crystal transformation kinetic models were empirically applied to the crystallization data. These models adequately describe the kinetics of crystallization in complex HLW glasses (i.e., RSquared = 0.908). An approach to measurement, fitting, and use of TTT diagrams for prediction of crystallinity in a HLW glass canister is proposed.

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Crystallization kinetics of a barium–zinc borosilicate glass by a non-isothermal method

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2013.12.086 ◽

2014 ◽

Vol 591 ◽

pp. 268-274 ◽

Cited By ~ 20

Author(s):

A.A.S. Lopes ◽

R.C.C. Monteiro ◽

R.S. Soares ◽

M.M.R.A. Lima ◽

M.H.V. Fernandes

Keyword(s):

Crystallization Kinetics ◽

Borosilicate Glass ◽

Isothermal Method ◽

Kinetics Of ◽

Zinc Borosilicate

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ISOTHERMAL CRYSTALLIZATION KINETICS OF POLY(TRIMETHYLENE TEREPHTHALATE) UNDER THE INFLUENCE OF SELF-SEEDING NUCLEATION

Acta Polymerica Sinica ◽

10.3724/sp.j.1105.2006.00414 ◽

2006 ◽

Vol 006 (3) ◽

pp. 414-417

Author(s):

Xingquan HE ◽

Demin XIE ◽

Decai YANG

Keyword(s):

Crystallization Kinetics ◽

Isothermal Crystallization ◽

Isothermal Crystallization Kinetics ◽

Trimethylene Terephthalate ◽

Kinetics Of

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Synthesis and Crystallization Kinetics of Y 2CaA1 4SiO 12 Garnet-Type Glass-Ceramic

SSRN Electronic Journal ◽

10.2139/ssrn.3618732 ◽

2020 ◽

Author(s):

Liyuan Wang ◽

Jiaxi Liu ◽

Nan Lu ◽

Zengchao Yang ◽

Gang He ◽

...

Keyword(s):

Crystallization Kinetics ◽

Glass Ceramic ◽

Kinetics Of

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Reordering and Crystallization of Silicon Carbide Amorphized by Neutron Irradiation

MRS Proceedings ◽

10.1557/proc-650-r5.1 ◽

2000 ◽

Vol 650 ◽

Author(s):

Lance L. Snead ◽

Martin Balden

Keyword(s):

Thin Film ◽

Silicon Carbide ◽

Crystallization Kinetics ◽

Neutron Irradiation ◽

Onset Temperature ◽

Kinetics Of Crystallization ◽

Crystallization Onset Temperature ◽

Crystallization Onset ◽

Kinetics Of

ABSTRACTDensification and crystallization kinetics of bulk SiC amorphized by neutron irradiation is studied. The temperature of crystallization onset of this highly pure, fully amorphous bulk SiC was found to be between 875-885°C and crystallization is nearly complete by 950°C. In-situ TEM imaging confirms the onset of crystallization, though thin-film effects apparently alter the kinetics of crystallization above this temperature. It requires >1125°C for complete crystallization of the TEM foil. Annealing at temperatures between the irradiation and crystallization onset temperature is seen to cause significant densification attributed to a relaxation, or reordering, of the as-amorphized structure.

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