A wide-bandgap, high-mobility electron-transporting material containing a 9,9′-spirobithioxanthene skeleton

Wide-bandgap organic nanocrystals are developed. The strong emission, efficient charge transport and tunable dual-color lasing characters indicate their superior photoelectric integrated property toward potential multifunctional applications.

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High-mobility p-channel wide-bandgap transistors based on hydrogen-terminated diamond/hexagonal boron nitride heterostructures

Nature Electronics ◽

10.1038/s41928-021-00689-4 ◽

2021 ◽

Author(s):

Yosuke Sasama ◽

Taisuke Kageura ◽

Masataka Imura ◽

Kenji Watanabe ◽

Takashi Taniguchi ◽

...

Keyword(s):

Boron Nitride ◽

Hexagonal Boron Nitride ◽

High Mobility ◽

Wide Bandgap

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Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa2O4 single crystals

APL Materials ◽

10.1063/1.5053867 ◽

2019 ◽

Vol 7 (2) ◽

pp. 022512 ◽

Cited By ~ 15

Author(s):

Zbigniew Galazka ◽

Steffen Ganschow ◽

Robert Schewski ◽

Klaus Irmscher ◽

Detlef Klimm ◽

...

Keyword(s):

Single Crystals ◽

High Mobility ◽

Wide Bandgap ◽

High Quality

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Single-Layered Hittorf’s Phosphorus: A Wide-Bandgap High Mobility 2D Material

Nano Letters ◽

10.1021/acs.nanolett.5b05068 ◽

2016 ◽

Vol 16 (5) ◽

pp. 2975-2980 ◽

Cited By ~ 114

Author(s):

Georg Schusteritsch ◽

Martin Uhrin ◽

Chris J. Pickard

Keyword(s):

High Mobility ◽

Wide Bandgap ◽

2D Material

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Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

Applied Physics Letters ◽

10.1063/1.1790587 ◽

2004 ◽

Vol 85 (13) ◽

pp. 2541-2543 ◽

Cited By ~ 434

Author(s):

Elvira M. C. Fortunato ◽

Pedro M. C. Barquinha ◽

Ana C. M. B. G. Pimentel ◽

Alexandra M. F. Gonçalves ◽

António J. S. Marques ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Room Temperature ◽

High Mobility ◽

Wide Bandgap ◽

Zno Thin Film

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Structural aspects of silicon diffusion in quaternary III-V thin-film semiconductors

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100088567 ◽

1991 ◽

Vol 49 ◽

pp. 850-851

Author(s):

F. A. Ponce ◽

R. L. Thornton ◽

G. B. Anderson

Keyword(s):

Semiconductor Lasers ◽

Wide Bandgap ◽

Semiconductor Diode ◽

Visible Range ◽

P System ◽

Misfit Dislocations ◽

Lattice Match ◽

Semiconductor Diode Laser ◽

Thin Film Semiconductors ◽

Silicon Diffusion

The InGaAlP quaternary system allows the production of semiconductor lasers emitting light in the visible range of the spectrum. Recent advances in the visible semiconductor diode laser art have established the viability of diode structures with emission wavelengths comparable to the He-Ne gas laser. There has been much interest in the growth of wide bandgap quaternary thin films on GaAs, a substrate most commonly used in optoelectronic applications. There is particular interest in compositions which are lattice matched to GaAs, thus avoiding misfit dislocations which can be detrimental to the lifetime of these materials. As observed in Figure 1, the (AlxGa1-x)0.5In0.5P system has a very close lattice match to GaAs and is favored for these applications.In this work, we have studied the effect of silicon diffusion in GaAs/InGaAlP structures. Silicon diffusion in III-V semiconductor alloys has been found to have an disordering effect which is associated with removal of fine structures introduced during growth. Due to the variety of species available for interdiffusion, the disordering effect of silicon can have severe consequences on the lattice match at GaAs/InGaAlP interfaces.

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A TEM study of the effect of oxygen on nanocavity formation and precipitation in rapid - solidified Fe-16Ni-9Cr stainless steels

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100171237 ◽

1994 ◽

Vol 52 ◽

pp. 700-701

Author(s):

S. Wisutmethangoon ◽

T. F. Kelly ◽

J.E. Flinn

Keyword(s):

Stainless Steels ◽

High Mobility ◽

Hot Extrusion ◽

Extrusion Ratio ◽

Gas Atomization ◽

Cavity Formation ◽

Nucleation Sites ◽

Heat Treated ◽

Different Types ◽

Effect Of Oxygen

Vacancies are introduced into the crystal phase during quenching of rapid solidified materials. Cavity formation occurs because of the coalescence of the vacancies into a cluster. However, because of the high mobility of vacancies at high temperature, most of them will diffuse back into the liquid phase, and some will be lost to defects such as dislocations. Oxygen is known to stabilize cavities by decreasing the surface energy through a chemisorption process. These stabilized cavities, furthermore, act as effective nucleation sites for precipitates to form during aging. Four different types of powders with different oxygen contents were prepared by gas atomization processing. The atomized powders were then consolidated by hot extrusion at 900 °C with an extrusion ratio 10,5:1. After consolidation, specimens were heat treated at 1000 °C for 1 hr followed by water quenching. Finally, the specimens were aged at 600 °C for about 800 hrs. TEM samples were prepared from the gripends of tensile specimens of both unaged and aged alloys.

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The need of electron microscopy in the study of domains and domain walls in ferroelectrics

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100170487 ◽

1994 ◽

Vol 52 ◽

pp. 550-551

Author(s):

Wenwu Cao

Keyword(s):

Domain Wall ◽

Domain Walls ◽

High Mobility ◽

Continuum Theory ◽

Polarization Vector ◽

Ferroelectric Materials ◽

Dielectric Constants ◽

Nonlocal Coupling ◽

Cubic Symmetry ◽

Gradient Energy

Domain structures play a key role in determining the physical properties of ferroelectric materials. The formation of these ferroelectric domains and domain walls are determined by the intrinsic nonlinearity and the nonlocal coupling of the polarization. Analogous to soliton excitations, domain walls can have high mobility when the domain wall energy is high. The domain wall can be describes by a continuum theory owning to the long range nature of the dipole-dipole interactions in ferroelectrics. The simplest form for the Landau energy is the so called ϕ model which can be used to describe a second order phase transition from a cubic prototype,where Pi (i =1, 2, 3) are the components of polarization vector, α's are the linear and nonlinear dielectric constants. In order to take into account the nonlocal coupling, a gradient energy should be included, for cubic symmetry the gradient energy is given by,

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