Microstructures of high-growth-rate (up to 8.3nm/s) microcrystalline silicon photovoltaic layers and their influence on the photovoltaic performance of thin-film solar cells

2008 ◽  
Vol 354 (19-25) ◽  
pp. 2407-2410 ◽  
Author(s):  
Y. Sobajima ◽  
S. Nakano ◽  
M. Nishino ◽  
Y. Tanaka ◽  
T. Toyama ◽  
...  
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
Solar Cells ◽  
Photovoltaic Performance ◽  
High Growth ◽  
High Growth Rate ◽  
Thin Film Solar Cells ◽  
Microcrystalline Silicon

Recent developments in the high growth rate technique of device-grade microcrystalline silicon thin film

2003 ◽  
Vol 12 (4) ◽  
pp. S111-S116 ◽  
Author(s):  
Michio Kondo ◽  
Susumu Suzuki ◽  
Yoshiyuki Nasuno ◽  
Masayuki Tanda ◽  
Akihisa Matsuda
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
High Growth ◽  
High Growth Rate ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film ◽  
Recent Developments

scholarly journals Influence of low rate p/i interface layer on the performance of high growth rate microcrystalline silicon solar cells

2008 ◽  
Vol 57 (8) ◽  
pp. 5284
Author(s):  
Han Xiao-Yan ◽  
Hou Guo-Fu ◽  
Li Gui-Jun ◽  
Zhang Xiao-Dan ◽  
Yuan Yu-Jie ◽  
...  
Keyword(s):  
Growth Rate ◽  
Solar Cells ◽  
High Growth ◽  
Interface Layer ◽  
High Growth Rate ◽  
Silicon Solar Cells ◽  
Microcrystalline Silicon ◽  
Low Rate

Photovoltaic performance of flexible Cu(In,Ga)Se2 thin-film solar cells with varying Cr impurity barrier thickness

2013 ◽  
Vol 13 (9) ◽  
pp. 2033-2037 ◽  
Author(s):  
Dae-Hyung Cho ◽  
Yong-Duck Chung ◽  
Kyu-Seok Lee ◽  
Kyung-Hyun Kim ◽  
Ju-Hee Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Photovoltaic Performance ◽  
Thin Film Solar Cells ◽  
Barrier Thickness

Microcrystalline silicon carbide alloys prepared with HWCVD as highly transparent and conductive window layers for thin film solar cells

2009 ◽  
Vol 517 (12) ◽  
pp. 3507-3512 ◽  
Author(s):  
F. Finger ◽  
O. Astakhov ◽  
T. Bronger ◽  
R. Carius ◽  
T. Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Microcrystalline Silicon

High growth-rate atomic layer deposition process of cerium oxide thin film for solid oxide fuel cell

2019 ◽  
Vol 45 (3) ◽  
pp. 3811-3815 ◽  
Author(s):  
Jin-Geun Yu ◽  
Byung Chan Yang ◽  
Jeong Woo Shin ◽  
Sungje Lee ◽  
Seongkook Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
High Growth ◽  
Atomic Layer ◽  
Deposition Process ◽  
High Growth Rate ◽  
Solid Oxide ◽  
Oxide Thin Film ◽  
Oxide Fuel ◽  
Layer Deposition

High Haze and Low Resistive MgO/AZO Bi-layer Transparent Conducting Oxide for Thin Film Solar Cells

2011 ◽  
Vol 1327 ◽  
Author(s):  
Dong Won Kang ◽  
Jong Seok Woo ◽  
Sung Hwan Choi ◽  
Seung Yoon Lee ◽  
Heon Min. Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Silicon Solar Cell ◽  
Transparent Conducting Oxide ◽  
Visible Region ◽  
Xrd Analysis ◽  
Thin Film Solar Cells ◽  
Microcrystalline Silicon ◽  
Transparent Conducting

ABSTRACTWe have propsed MgO/AZO bi-layer transparent conducting oxide (TCO) for thin film solar cells. From XRD analysis, it was observed that the full width at half maximum of AZO decreased when it was grown on MgO precursor. The Hall mobility of MgO/AZO bi-layer was 17.5cm2/Vs, whereas that of AZO was 20.8cm2/Vs. These indicated that the crystallinity of AZO decreased by employing MgO precursor. However, the haze (=total diffusive transmittance/total transmittance) characteristics of highly crystalline AZO was significantly improved by MgO precursor. The average haze in the visible region increased from 14.3 to 48.2%, and that in the NIR region increased from 6.3 to 18.9%. The reflectance of microcrystalline silicon solar cell was decreased and external quantum efficiency was significantly improved by applying MgO/AZO bi-layer TCO. The efficiency of microcrystalline silicon solar cell with MgO/AZO bi-layer front TCO was 6.66%, whereas the efficiency of one with AZO single TCO was 5.19%.

Guiding Principle to Develop Intrinsic Microcrystalline Silicon Absorber Layer For Solar Cell By Hot-Wire Cvd

2001 ◽  
Vol 664 ◽  
Author(s):  
A. R. Middya ◽  
U. Weber ◽  
C. Mukherjee ◽  
B. Schroeder
Keyword(s):  
Growth Rate ◽  
Solar Cell ◽  
Cell Structure ◽  
Short Circuit ◽  
Chemical Vapor ◽  
High Growth ◽  
High Growth Rate ◽  
Open Circuit ◽  
Hot Wire ◽  
Microcrystalline Silicon

ABSTRACTWe report on ways to develop device quality microcrystalline silicon (μc-Si:H) intrinsic layer with high growth rate by hot-wire chemical vapor deposition (HWCVD). With combine approach of controlling impurities and moderate H-dilution [H2/SiH4 ͌ 2.5], we developed, for the first time, highly photosensitive (103 μc-Si:Hfilms with high growth rate (>1 nm/s); the microstructure of the film is found to be close to amorphous phase (fc ͌ 46 ̻± 5%). The photosensitivity systematically decreases with fc and saturates to 10 for fc> 70%. On application of these materials in non-optimized pin [.proportional]c-Si:H solar cell structure yields 700 mV open-circuit voltage however, surprisingly low fill factor and short circuit current. The importance of reduction of oxygen impurities [O], adequate passivation of grain boundary (GB) as well as presence of inactive GB of (220) orientation to achieve efficient [.proportional]c-Si:H solar cells are discussed.

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