One-step synthesis of well-dispersed polypyrrole copolymers under gamma-ray irradiation

2021 ◽  
Vol 12 (5) ◽  
pp. 645-649
Author(s):  
Yu Gu ◽  
Yuqing Qiao ◽  
Yusen Meng ◽  
Ming Yu ◽  
Bowu Zhang ◽  
...  

Herein, we report for the first time the synthesis of polypyrrole copolymers with good solvent-dispersibility under gamma-ray irradiation at room temperature in air.

2013 ◽  
Vol 28 (4) ◽  
pp. 415-421 ◽  
Author(s):  
Milic Pejovic

The gamma-ray irradiation sensitivity to radiation dose range from 0.5 Gy to 5 Gy and post-irradiation annealing at room and elevated temperatures have been studied for p-channel metal-oxide-semiconductor field effect transistors (also known as radiation sensitive field effect transistors or pMOS dosimeters) with gate oxide thicknesses of 400 nm and 1 mm. The gate biases during the irradiation were 0 and 5 V and 5 V during the annealing. The radiation and the post-irradiation sensitivity were followed by measuring the threshold voltage shift, which was determined by using transfer characteristics in saturation and reader circuit characteristics. The dependence of threshold voltage shift DVT on absorbed radiation dose D and annealing time was assessed. The results show that there is a linear dependence between DVT and D during irradiation, so that the sensitivity can be defined as DVT/D for the investigated dose interval. The annealing of irradiated metal-oxide-semiconductor field effect transistors at different temperatures ranging from room temperature up to 150?C was performed to monitor the dosimetric information loss. The results indicated that the dosimeters information is saved up to 600 hours at room temperature, whereas the annealing at 150?C leads to the complete loss of dosimetric information in the same period of time. The mechanisms responsible for the threshold voltage shift during the irradiation and the later annealing have been discussed also.


2007 ◽  
Vol 61 (14-15) ◽  
pp. 3232-3234 ◽  
Author(s):  
Yongbin Zhao ◽  
Dawei Zhang ◽  
Wenfang Shi ◽  
Feng Wang

1994 ◽  
Vol 299 ◽  
Author(s):  
J. F. Butler ◽  
F. P. Doty ◽  
B. Apotovsky ◽  
S. J. Friesenhahn ◽  
C. Lingren

AbstractResults of a program to improve the performance of Cd1−xZnxTe detectors by adjusting growth parameters to achieve low-strain, high purity low defect crystals, investigating surface effect phenomena and contacting methods, and establishing reproducible manufacturing methods are reviewed and discussed. Processing and fabrication methods were developed which are applicable throughout the composition range. Energy spectra for room temperature Cd1−xZnxTe detectors exhibit resolutions (FWHM) from 2.16 keV at 14 keV to 6.9 keV at 122 keV. An energy resolution of 910 eV at 5.9 keV was achieved at −25 C. Stable ohmic contacts and gamma ray detection for ZnTe are reported for the first time. Applications of Cd1−xZnxTe to nuclear medicine and X-ray fluorescence are discussed. New gamma ray imagers using Cd1-−ZnxTe detector arrays are described, and imaging data for a 32 × 32 monolithic array of 1 mm2 elements on a 42mm × 42mm substrate are presented.


2015 ◽  
Vol 821-823 ◽  
pp. 705-708 ◽  
Author(s):  
Takashi Yokoseki ◽  
Hiroshi Abe ◽  
Takahiro Makino ◽  
Shinobu Onoda ◽  
Yuki Tanaka ◽  
...  

Effects of gamma-ray irradiation and subsequent thermal annealing on the characteristics of vertical structure power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) fabricated on 4H-SiC were studied. After irradiation at 1.2 MGy, the drain current – gate voltage curves of the MOSFETs shifted to the negative voltage side and the leakage drain current at inverse voltage increased. No significant change in the degraded electrical characteristics of SiC MOSFETs was observed by room temperature annealing. The degraded characteristics of SiC MOSFETs began to recover by annealing above 120 °C, and their characteristics reached almost the initial ones by annealing at 360 °C.


1992 ◽  
Vol 281 ◽  
Author(s):  
M. Yoshikawa ◽  
Y. Morita ◽  
H. Itoh ◽  
I. Nashiyama ◽  
H. Okumura ◽  
...  

ABSTRACTThermal annealing of interface traps introduced by 60Co gamma-ray irradiation in 3C-SiC metal-oxide-semiconductor (MOS) structures have been studied by high-frequency capacitance-voltage measurements. By isochronal annealing up to 400°C, two recovery stages were observed, which correspond to the annealing of two different types of the interface traps. It was found that introduction of the interface traps was suppressed by thermal annealing before irradiation. Radiation tolerance of 3C-SiC MOS structure is explained in terms of the room temperature annealing of the interface traps introduced by irradiation.


2021 ◽  
Vol 2021 ◽  
pp. 1-14
Author(s):  
Duy Khang Nguyen Vu ◽  
Dang Khoa Vo Nguyen

In this work, silver nanoparticle- (AgNP-) embedded graphene oxide- (GO-) TiO2 nanotube (TNT) nanocomposite (labelled GAT) was successfully synthesized by gamma ray radiolysis. The influence of irradiation process, including one-step and two-step assistances and at different irradiation doses (5, 10, 15, 20, and 25 kGy), on the GAT’s physicochemical properties was achieved. Structure and properties of irradiated materials were analyzed by Fourier-transformed infrared (FT-IR), ultraviolet-visible absorption (UV-Vis), and Raman spectroscopies; X-ray diffraction (XRD); and scanning electron (SEM) and transmission electron (TEM) microscopies. In addition, selective scavengers of e-aq and ⋅OH radicals were used to investigate the radiolytic synthesis of GAT nanocomposite. It was revealed that gamma ray irradiation could strongly support the relation of the composite synthesis. Furthermore, the synthesized GAT nanocomposites showed a significant effect for Rhodamine B (RhB) photodecomposition after 60 minutes of natural sunlight exposure and evaluation by UV-Vis absorption spectroscopy. Briefly, the obtained results highlighted the potential of gamma irradiation as a “clean” and controllable way for synthesizing beneficial nanocomposite materials for wastewater purification and other environmental aspects.


2016 ◽  
Vol 123 ◽  
pp. 68-72 ◽  
Author(s):  
Akihiro Tokai ◽  
Kenji Okitsu ◽  
Fuminobu Hori ◽  
Yoshiteru Mizukoshi ◽  
Akihiro Iwase

1993 ◽  
Vol 302 ◽  
Author(s):  
J. F. Butler ◽  
F. P. Doty ◽  
B. Apotovsky ◽  
S. J. Friesenhahn ◽  
C. Lingren

ABSTRACTResults of a program to improve the performance of Cd1-xZnxTe detectors by adjusting growth parameters to achieve low-strain, high purity low defect crystals, investigating surface effect phenomena and contacting methods, and establishing reproducible manufacturing methods are reviewed and discussed. Processing and fabrication methods were developed which are applicable throughout the composition range. Energy spectra for room temperature Cdl-xZnxTe detectors exhibit resolutions (FWHM) from 2.16 keV at 14 keV to 6.9 keV at 122 keV. An energy resolution of 910 eV at 5.9 keV was achieved at −25 C. Stable ohmic contacts and gamma ray detection for ZnTe are reported for the first time. Applications of Cdl-xZnxTe to nuclear medicine and X-ray fluorescence are discussed. New gamma ray imagers using Cd1-xZnxTe detector arrays are described, and imaging data for a 32 × 32 monolithic array of 1 mm2 elements on a 42mm × 42mm substrate are presented.


1972 ◽  
Vol 50 (2) ◽  
pp. 162-166 ◽  
Author(s):  
R. S. Eachus ◽  
F. G. Herring

Gamma-ray irradiation at 77 °K and X-ray irradiation at room temperature of single crystals of the diamagnetic tetrapotassium hexacyanoruthenate trihydrate have been shown to produce a number of interesting paramagnetic species. At room temperature the e.s.r. spectra can be interpreted in terms of the species [Ru(CN)5(NC)]5−. At liquid nitrogen temperature the species [Ru(CN)4(NC)2]5− is observed and the HCN− radical is produced in an environment which does not permit it to rapidly reorientate at 77 °K. The HCN− radical is believed to be in close association with a ruthenium(II) ion.


2020 ◽  
Author(s):  
Xuting Jin ◽  
Li Song ◽  
Hongsheng Yang ◽  
Chunlong Dai ◽  
Yukun xiao ◽  
...  

Abstract At relatively low temperature (e.g, -30 oC), most flexible supercapacitors that work well at room temperature will lose their stretchability due to the poor cold intolerance of conventional electrolytes and the absence of intrinsically stretchable electrodes. Herein, an anti-freezing and highly stretchable supercapacitor (AF-SSC) was fabricated for the first time by one-step in-situ growth of polyaniline onto an organohydrogel polyelectrolyte from cross-linked polyacrylamide networks soaked by ethylene glycol/water/H2SO4. As no extra stretchable substrates (e.g. elastic fiber, polydimethylsiloxane, rubber, etc.) or predefining stretchable structures (e.g. helical, spring, wrinkle, honeycombed structures etc.) are needed in such a design, the prepared AF-SSC shows a high mechanical stretchability of 200% under -30 oC and can be repeatedly stretched for 100 cycles without significant capacitance loss. Besides, an impressive capacitance retention of 73.1% at -30 oC is achieved when the current density increases by 20 times, which is much higher than those of stretchable supercapacitors based on pseudocapacitive materials that operated at room temperature. Furthermore, the device shows an ultralong lifespan with 91.7% capacitance retention after 100000 cycles at -30 oC, outperforming all stretchable supercapacitors reported previously. With other merits of high compressibility, strong adhesion, good processability and excellent anti-drying ability, the current device is an ideal power source to drive multi-functional electronic components in real-life scenarios.


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