One to 40 GHz ultra‐wideband RF MEMS direct‐contact switch based on GaAs MMIC technique

2018 ◽  
Vol 12 (6) ◽  
pp. 879-884
Author(s):  
Chenlei Chu ◽  
Xiaoping Liao
Keyword(s):  
Direct Contact ◽  
Rf Mems ◽  
Ultra Wideband ◽  
Contact Switch

Simultaneous Electrical and Thermal Modeling of a Contact-Type RF MEMS Switch

2003 ◽  
Author(s):  
Brian Jensen ◽  
Zhongde Wang ◽  
Kazuhiro Saitou ◽  
John L. Volakis ◽  
Katsuo Kurabayashi
Keyword(s):  
Contact Resistance ◽  
Direct Contact ◽  
Rf Mems ◽  
Bulk Material ◽  
Thermal Contact ◽  
Electrical Contact ◽  
Maximum Temperature ◽  
Electrical Contact Resistance ◽  
Rf Mems Switch ◽  
Mems Switch

Improving the power handling capability of direct contact RF MEMS switches requires a knowledge of conditions at the contact. This paper models the temperature rise in a direct contact RF MEMS switch, including the effects of electrical and thermal contact resistance. The maximum temperature in the beam is found to depend strongly on the power dissipation at the contact, with almost no contribution from dissipation due to currents in the rest of the switch. Moreover, the maximum temperature is found to exceed the limit for metal softening for a significant range of values of thermal and electrical contact resistance. Since local contact asperity temperature can be hundreds of degrees higher than the bulk material temperature modeled here, these results underscore the importance of understanding and controlling thermal and electrical contact resistance in the switch.

scholarly journals Cantilever Beam Metal-Contact MEMS Switch

2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
Adel Saad Emhemmed ◽  
Abdulmagid A. Aburwein
Keyword(s):  
Cantilever Beam ◽  
Rf Mems ◽  
Spring Constant ◽  
Metal Contact ◽  
Rf Mems Switch ◽  
Microelectromechanical System ◽  
Mems Switch ◽  
Integrated Method ◽  
Beam Geometry ◽  
Contact Switch

We present a new design of a miniature RF microelectromechanical system (MEMS) metal-contact switch and investigate various aspects associated with lowering the pull-down voltage and overcoming the stiction problem. Lowering the pull-down voltage in this design is based on reducing the spring constant by changing the cantilever beam geometry of the RF MEMS switch, and the stiction problem is overcome by a simple integrated method using two tiny posts located on the substrate at the free end of the cantilever beam.

scholarly journals An Ultra Wideband, Novel and Reliable RF MEMS Switch

2016 ◽  
Vol 17 (4) ◽  
pp. 183-188 ◽  
Author(s):  
Mayuri Jha ◽  
Rahul Gogna ◽  
Gurjot Singh Gaba ◽  
Rajan Miglani
Keyword(s):  
Rf Mems ◽  
Ultra Wideband ◽  
Rf Mems Switch ◽  
Mems Switch

scholarly journals Lifetime Extension of RF MEMS Direct Contact Switches in Hot Switching Operations by Ball Grid Array Dimple Design

2007 ◽  
Vol 28 (6) ◽  
pp. 479-481 ◽  
Author(s):  
Linda L. W. Chow ◽  
John L. Volakis ◽  
Kazuhiro Saitou ◽  
Katsuo Kurabayashi
Keyword(s):  
Direct Contact ◽  
Rf Mems ◽  
Ball Grid Array ◽  
Hot Switching ◽  
Lifetime Extension
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