Printed in-plane electrolyte-gated transistor based on zinc oxide

Printed electronics is a reputable research area that encourages the search for simple alternatives of manufacturing processes for low-cost, eco-friendly, and biodegradable electronic devices. Among these devices, electrolyte-gated transistors (EGTs) stand out due to their simple manufacturing process and architecture. Here we report the study of printed electrolyte-gated transistors with in-plane gate architecture (IPGT) based on zinc oxide nanoparticles (ZnO-NPs). The drain, source, and gate electrodes with two different W/L channel ratios were fabricated using a screen-printed carbon-based ink. We also produced a conventional top-gate transistor as a control device, using the same structure as the IPGT described above by adding an ITO strip positioned over the electrolyte as the top-gate electrode. The IPGT with W/L = 5 presented a high mobility of 7.1 cm2V-1s-1, while the W/L = 2.5 device exhibited a mobility of 3.7 cm2V-1s-1. We found that the measured field-effect mobility of the device can be affected by the high contact resistance from the carbon electrodes. This effect could be observed when the geometric parameters of the devices were changed. Furthermore, we also found that the IPGT with W/L = 5 exhibited better values for mobility and transconductance than the top-gate transistor, showing that the IPGTs setup is a good promise for cheap and printed transistors with performance comparable to standard top-gate transistors.