scholarly journals Isotopic enrichment of silicon by high fluence 28Si− ion implantation

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
D. Holmes ◽  
B. C. Johnson ◽  
C. Chua ◽  
B. Voisin ◽  
S. Kocsis ◽  
...  
Keyword(s):  
Ion Implantation ◽  
High Fluence ◽  
Isotopic Enrichment

Optical, electrical, and chemical characterization of nanostructured InxGa1-xN formed by high fluence In+ ion implantation into GaN

2020 ◽  
pp. 110541
Author(s):  
C.A. Hernández-Gutiérrez ◽  
Yuriy Kudriavtsev ◽  
Dagoberto Cardona ◽  
A.G. Hernández ◽  
J.L. Camas-Anzueto
Keyword(s):  
Ion Implantation ◽  
Chemical Characterization ◽  
High Fluence

Temperature Dependence and Annealing Behaviour of Hf Implanted (100)Si: HfSi 2 Synthesis

1995 ◽  
Vol 402 ◽  
Author(s):  
M. R. Da Silva ◽  
A. A. Melo ◽  
J. C. Soares ◽  
M. F. Da Silva ◽  
R. Moons ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Substrate Temperature ◽  
Temperature Dependence ◽  
Subsequent Annealing ◽  
High Fluence ◽  
Annealing Behaviour

AbstractWe investigated the formation of a buried HfSi2 layer by high fluence ion implantation of isotopically mass separated 179–180 Hf+ on heated silicon (100) substrates. It is shown that for the substrate temperature of 600°C a buried HfSi 2 layer is formed. By subsequent annealing at 1000 °C a continuous 12 nm HfSi2 layer on the Si surface is formed followed by 130 nm big almost spherodized HfSi2 ellipsoid and 80 nm small HfSi2 and Si grains. The annealing of samples implanted at lower temperatures show that HfSi2 is also formed but with reduced yield. A summary of the relevant data is presented.

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