Measurement of the Silicon Lattice Parameter by Scanning Single Photon X-Ray Interferometry

2018 ◽  
Author(s):  
Ulrich Kuetgens ◽  
Birk Andreas ◽  
Kathrin Friedrich ◽  
Christoph Weichert ◽  
Paul Kochert ◽  
...  
Keyword(s):  
Single Photon ◽  
Lattice Parameter ◽  
Silicon Lattice ◽  
X Ray

scholarly journals Defocused travelling fringes in a scanning triple-Laue X-ray interferometry setup

2021 ◽  
Vol 54 (5) ◽  
pp. 1403-1408
Author(s):  
C. P. Sasso ◽  
G. Mana ◽  
E. Massa
Keyword(s):  
Measurement Accuracy ◽  
Systematic Errors ◽  
Lattice Parameter ◽  
Silicon Lattice ◽  
X Ray ◽  
Interference Fringes ◽  
Reliable Model ◽  
The Difference ◽  
Separate Crystal

The measurement of the silicon lattice parameter by a separate-crystal triple-Laue X-ray interferometer is a key step for the realization of the kilogram by counting atoms. Since the measurement accuracy is approaching nine significant digits, a reliable model of the interferometer operation is required to quantify or exclude systematic errors. This paper investigates both analytically and experimentally the effect of the defocus (the difference between the splitter-to-mirror and analyser-to-mirror distances) on the phase of the interference fringes and the measurement of the lattice parameter.

Scanning X-ray interferometry and the silicon lattice parameter: towards relative uncertainty?

1999 ◽  
Vol 9 (2) ◽  
pp. 225-232 ◽  
Author(s):  
A. Bergamin ◽  
G. Cavagnero ◽  
G. Mana ◽  
G. Zosi
Keyword(s):  
Lattice Parameter ◽  
Relative Uncertainty ◽  
Silicon Lattice ◽  
X Ray

scholarly journals Growth of sillenite Bi12FeO20 single crystals: structural, thermal, optical, photocatalytic features and first principle calculations

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Durga Sankar Vavilapalli ◽  
Ambrose A. Melvin ◽  
F. Bellarmine ◽  
Ramanjaneyulu Mannam ◽  
Srihari Velaga ◽  
...  
Keyword(s):  
Single Crystal ◽  
Single Crystals ◽  
Photoelectron Spectroscopy ◽  
Diffraction Method ◽  
Lattice Parameter ◽  
First Principle ◽  
X Ray Diffraction ◽  
X Ray ◽  
First Principle Calculations ◽  
Photodegradation Efficiency

AbstractIdeal sillenite type Bi12FeO20 (BFO) micron sized single crystals have been successfully grown via inexpensive hydrothermal method. The refined single crystal X-ray diffraction data reveals cubic Bi12FeO20 structure with single crystal parameters. Occurrence of rare Fe4+ state is identified via X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS). The lattice parameter (a) and corresponding molar volume (Vm) of Bi12FeO20 have been measured in the temperature range of 30–700 °C by the X-ray diffraction method. The thermal expansion coefficient (α) 3.93 × 10–5 K−1 was calculated from the measured values of the parameters. Electronic structure and density of states are investigated by first principle calculations. Photoelectrochemical measurements on single crystals with bandgap of 2 eV reveal significant photo response. The photoactivity of as grown crystals were further investigated by degrading organic effluents such as Methylene blue (MB) and Congo red (CR) under natural sunlight. BFO showed photodegradation efficiency about 74.23% and 32.10% for degrading MB and CR respectively. Interesting morphology and microstructure of pointed spearhead like BFO crystals provide a new insight in designing and synthesizing multifunctional single crystals.

scholarly journals Measurements by x-ray diffraction of the temperature dependence of lattice parameter and crystallite size for isostatically-pressed graphite

Carbon Trends ◽  
2021 ◽  
pp. 100071
Author(s):  
Keith R. Hallam ◽  
James Edward Darnbrough ◽  
Charilaos Paraskevoulakos ◽  
Peter J. Heard ◽  
T. James Marrow ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Crystallite Size ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray

Problems Associated with Kα Doublet in Residual Stress Measurements

1979 ◽  
Vol 23 ◽  
pp. 333-339
Author(s):  
S. K. Gupta ◽  
B. D. Cullity
Keyword(s):  
Residual Stress ◽  
Silicon Powder ◽  
Lattice Parameter ◽  
Diffraction Peak ◽  
Parameter Determination ◽  
X Ray Diffraction ◽  
X Ray ◽  
Analysis Techniques ◽  
The Difference ◽  
Similar Accuracy

Since the measurement of residual stress by X-ray diffraction techniques is dependent on the difference in angle of a diffraction peak maximum when the sample is examined consecutively with its surface at two different angles to the diffracting planes, it is important that these diffraction angles be obtained precisely, preferably with an accuracy of ± 0.01 deg. 2θ. Similar accuracy is desired in precise lattice parameter determination. In such measurements, it is imperative that the diffractometer be well-aligned. It is in the context of diffractometer alignment with the aid of a silicon powder standard free of residual stress that the diffraction peak analysis techniques described here have been developed, preparatory to residual stress determinations.

scholarly journals MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

2000 ◽  
Vol 5 (S1) ◽  
pp. 412-424
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

EFFECTS OF A PARTIAL SUBSTITUTION OF Cu ELEMENTS BY Nb ELEMENTS IN YBaCuO SYSTEM

1990 ◽  
Vol 04 (12) ◽  
pp. 823-830 ◽  
Author(s):  
S. HIGO ◽  
Y. HAKURAKU ◽  
T. OGUSHI ◽  
I. KAWANO ◽  
Y. ISHIKAWA
Keyword(s):  
Solid State Reaction Method ◽  
Lattice Parameter ◽  
Partial Substitution ◽  
Maximum Temperature ◽  
X Ray ◽  
Cubic Lattice ◽  
Nb Content ◽  
Molecular Ratios ◽  
Diffraction Patterns ◽  
Two Phases

Samples of the YBaCuNbO system with different molecular ratios of YBa 2 NbO y to YBa 2 Cu 3 O 7−d, were prepared in air by the solid-state reaction method. The X-ray powder diffraction patterns showed that the sample was composed of two phases, one corresponding to the YBa 2 Cu 3 O 7−d phase and the other to the YBa 2 NbO y phase with a cubic lattice parameter of 8.425 Å to 8.436 Å depending on the Nb content. The superconducting zero resistivity temperature, T c 0, of the YBaCuNbO system increased with the increase of the molecular ratios, from 91.2 K up to a maximum temperature of 92.8 K, and then, by a further increase in the molecular ratio, the T c 0 was drastically reduced with a gradient of −1.94 K /%x.

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