Epitaxial growth of metastable La0.67Sr0.33MnO3−δ films by using Sr3Al2O6 as multifunctional buffer layers

2022 ◽  
Vol 40 (1) ◽  
pp. 013413
Author(s):  
Yanhan Fang ◽  
Wenjie Sun ◽  
Lu Han ◽  
Zeya Li ◽  
Haoying Sun ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layers

(Invited) Epitaxial Growth of Low Defect SiGe Buffer Layers for Integration of New Materials on 300 mm Silicon Wafers

2013 ◽  
Vol 50 (9) ◽  
pp. 613-621 ◽  
Author(s):  
G. Kozlowski ◽  
O. Fursenko ◽  
P. Zaumseil ◽  
T. Schroeder ◽  
M. Vorderwestner ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Silicon Wafers ◽  
Buffer Layers ◽  
New Materials

Epitaxial Growth of Ferroelectric Thin Films on GaAs with MgO Buffer Layers by Pulsed Laser Deposition

1991 ◽  
Vol 243 ◽  
Author(s):  
K. Nashimoto ◽  
D. K. Fork ◽  
F. A. Ponce ◽  
T. H. Geballe
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Epitaxial Growth ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Hrtem Observation ◽  
Device Applications ◽  
Ferroelectric Hysteresis

AbstractEpitaxial growth of ferroelectric thin films on GaAs (100) by pulsed laser deposition was examined for integrated electro-optic device applications. To promote epitaxy of ferroelectrics and prevent interdiffusion, we have deposited several types of buffer layers. CeO2 reacted strongly with GaAs. Although Y203 9% stabilized-ZrO2 films showed epitaxial growth, YSZ reacted with GaAs at 780°C. MgO grew epitaxially and was stable even at 780°C. HRTEM observation showed a sharp interface between MgO and GaAs. BaTiO3 and SrTiO3 deposited on MgO/GaAs structures showed epitaxial growth. In-plane orientation was BaTiO3 [100 // MgO [100] // GaAs [100]. Epitaxial BaTiO3 films were c-axis oriented tetragonal phase and showed ferroelectric hysteresis.

Roles of Buffer Layers in Epitaxial Growth ofSrTiO3Films on Silicon Substrates

1994 ◽  
Vol 33 (Part 1, No. 3A) ◽  
pp. 1472-1477 ◽  
Author(s):  
Bum Ki Moon ◽  
Hiroshi Ishiwara
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layers ◽  
Silicon Substrates

Epitaxial Growth of Solution-Based Rare-Earth Niobate, RE3NbO7, Films on Biaxially Textured Ni–W Substrates

2005 ◽  
Vol 20 (1) ◽  
pp. 6-9 ◽  
Author(s):  
M. Paranthaman ◽  
M.S. Bhuiyan ◽  
S. Sathyamurthy ◽  
H.Y. Zhai ◽  
A. Goyal ◽  
...  
Keyword(s):  
Rare Earth ◽  
Critical Current Density ◽  
Epitaxial Growth ◽  
Chemical Solution Deposition ◽  
Ybco Film ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Laser Deposition ◽  
Chemical Solution ◽  
Solution Deposition

A new series of rare earth-niobate, RE3NbO7 (RE=Y,Gd,Eu), buffer layers were developed for the growth of superconducting YBa2Cu3O7−δ (YBCO) films on biaxially textured Ni–W (3 at.%) substrates. Using chemical solution deposition, smooth, crack-free, and epitaxial RE3NbO7 (RE = Y,Gd,Eu) films were grown on cube-textured Ni–W substrate. YBCO film with a critical current density of 1.1 × 106 A/cm2 in self-field at 77 K was grown directly on a single Gd3NbO7-buffered Ni–W substrate using pulsed laser deposition.

Epitaxial growth of Co films and Co/Cu superlattices on sapphire substrates with and without buffer layers

1993 ◽  
Vol 127 (1-4) ◽  
pp. 682-685 ◽  
Author(s):  
K. Bröhl ◽  
P. Bödeker ◽  
N. Metoki ◽  
A. Stierle ◽  
H. Zabel
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layers ◽  
Sapphire Substrates

Effects of buffer layers in epitaxial growth of SrTiO3thin film on Si(100)

1995 ◽  
Vol 78 (12) ◽  
pp. 7226-7230 ◽  
Author(s):  
Osamu Nakagawara ◽  
Masato Kobayashi ◽  
Yukio Yoshino ◽  
Yûzô Katayama ◽  
Hitoshi Tabata ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layers

scholarly journals Epitaxial growth of ultra-thin NbN films on AlxGa1−xN buffer-layers

2014 ◽  
Vol 27 (6) ◽  
pp. 065009 ◽  
Author(s):  
S Krause ◽  
D Meledin ◽  
V Desmaris ◽  
A Pavolotsky ◽  
V Belitsky ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layers
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