Nb Contacts to GaAs: Thermal Stability and Phase Formation

1987 ◽  
Vol 108 ◽  
Author(s):  
Kevin J. Schulz ◽  
Xiang-Yun Zheng ◽  
Y. Austin Chang
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Film Studies ◽  
Bulk Diffusion ◽  
Diffusion Path ◽  
Diffusion Couples ◽  
Compound Formation ◽  
The Stability ◽  
Binary Compounds ◽  
Thermal Stability Of

ABSTRACTThe applicability of Nb as a Schottky barrier on GaAs depends to a large extent on the thermal stability of the contacts. In this study, bulk diffusion couple and phase diagram studies in addition to thin film studies were completed to understand the stability of and the reactions at the Nb/GaAs interface. Nb thin films were deposited onto GaAs substrates by dc magnetron sputtering and were annealed in the temperature range 300 to 1000°C. Analysis was done using plan-TEM and XTEM. The Nb/GaAs interface was found to break down into a series of binary compounds above 500°C. Bulk diffusion couples annealed at 600°C were analyzed using an electron microprobe. The stable sequence of phases formed in the couple, i.e., the diffusion path, was determined and was used to rationalize the observed compound formation in the thin film contact system.

Reactions between palladium and gallium arsenide: Bulk versus thin-film studies

1988 ◽  
Vol 3 (1) ◽  
pp. 148-163 ◽  
Author(s):  
J. -C. Lin ◽  
K. -C. Hsieh ◽  
K. J. Schulz ◽  
Y. A. Chang
Keyword(s):  
Thin Film ◽  
Phase Formation ◽  
Ternary Phase ◽  
Film Studies ◽  
Bulk Diffusion ◽  
Diffusion Path ◽  
Solution Phase ◽  
Stable Configuration ◽  
Diffusion Couples ◽  
Initial Formation

Reactions between Pd and GaAs have been studied using bulk-diffusion couples of Pd (∼0.6 mm thick) /GaAs and thin-film Pd (50 and 160 nm)/GaAs samples. The sequence of phase formation at 600°C between bulk Pd and GaAs was established. Initial formation of the solution phase μ and the ternary phase T does not represent the stable configuration. The stable configuration is GaAs |∊|Λ|γ|ν|Pd and is termed the diffusion path between GaAs and Pd. The sequence of phase formation for the bulk-diffusion couples is similar at 500°C. Phase formation for the thin-film Pd/GaAs specimens was studied at 180,220,250,300,350,400,450,600, and 1000°C for various annealing times. The sequence of phase formation obtained from the thin-film experiments is rationalized readily from the known ternary phase equilibria of Ga–Pd–As and the results from the bulk-diffusion couples of Pd/GaAs. The thin-film results reported in the literature are likewise rationalized. The diffusion path concept provides a useful guide in understanding the phase formation in Pd–GaAs interface or any other M-GaAs interface. This information is important in designing a uniform, stable contact for the metallization of GaAs.

Intrinsic Thermal Stability of Anisotropic Thin-Film Superconductors

1990 ◽  
Vol 112 (1) ◽  
pp. 10-15 ◽  
Author(s):  
M. I. Flik ◽  
C. L. Tien
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Stability Criterion ◽  
High Temperature Superconductors ◽  
Stability Criteria ◽  
Anisotropic Thermal Conductivity ◽  
Operating Current ◽  
Released Energy ◽  
The Stability ◽  
Thermal Stability Of

Intrinsic thermal stability denotes a situation where a superconductor can carry the operating current without resistance at all times after the occurrence of a localized release of thermal energy. This novel stability criterion is different from the cryogenic stability criteria for magnets and has particular relevance to thin-film superconductors. Crystals of ceramic high-temperature superconductors are likely to exhibit anisotropic thermal conductivity. The resultant anisotropy of highly oriented films of superconductors greatly influences their thermal stability. This work presents an analysis for the maximum operating current density that ensures intrinsic stability. The stability criterion depends on the amount of released energy, the Biot number, the aspect ratio, and the ratio of the thermal conductivities in the plane of the film and normal to it.

High Temperature Stability of SiC/Ti Interface

2011 ◽  
Vol 685 ◽  
pp. 340-344 ◽  
Author(s):  
Tung Wai Leo Ngai ◽  
Chang Xu Hu ◽  
Wei Zheng ◽  
Heng Xie ◽  
Yuan Yuan Li
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Composite Materials ◽  
Temperature Stability ◽  
Diffusion Path ◽  
Interfacial Stability ◽  
Diffusion Couples ◽  
High Temperature Stability ◽  
High Temperature Structural Material ◽  
Thermal Stability Of

Ti, SiC and their composite materials have been widely used as high temperature structural material. The knowledge of interfacial stability between SiC and Ti is vital in high temperature applications. In this study, SiC/Ti diffusion couples were prepared to investigate the interfacial reactions between SiC and Ti at 1273 K. Phase forming sequence, microstructure and thermal stability of SiC/Ti interface were studied. It was indicated that after annealed at 1273 K for 10 days, 4 reaction layers were formed at the SiC/Ti interface. The diffusion path between SiC and Ti is SiC/Ti3SiC2/Ti5Si3/Ti5Si3+TiC/Ti3Si/Ti. As the annealing time prolong, the thicknesses of these reaction layers increased.

Thermal stability of PECVD W-B-N thin film as a diffusion barrier

1997 ◽  
Author(s):  
YongTae Kim ◽  
Dong J. Kim ◽  
Chang W. Lee ◽  
Jong-Wan Park
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Diffusion Barrier ◽  
Thermal Stability Of

scholarly journals Thermal Stability of Residual Stresses in Differently Deep Rolled Surface Layers of Steel SAE 1045

2021 ◽  
Author(s):  
Stephanie Saalfeld ◽  
Thomas Wegener ◽  
Berthold Scholtes ◽  
Thomas Niendorf
Keyword(s):  
Thermal Stability ◽  
Elevated Temperature ◽  
Residual Stresses ◽  
Elevated Temperatures ◽  
Fatigue Behavior ◽  
Decisive Role ◽  
Deep Rolling ◽  
Material Conditions ◽  
The Stability ◽  
Thermal Stability Of

AbstractThe stability of compressive residual stresses generated by deep rolling plays a decisive role on the fatigue behavior of specimens and components, respectively. In this regard, deep rolling at elevated temperature has proven to be very effective in stabilizing residual stresses when fatigue analysis is conducted at ambient temperature. However, since residual stresses can be affected not only by plastic deformation but also when thermal energy is provided, it is necessary to analyze the influence of temperature and time on the relaxation behavior of residual stresses at elevated temperature. To evaluate the effect of deep rolling at elevated temperatures on stability limits under thermal as well as combined thermo-mechanical loads, the present work introduces and discusses the results of investigations on the thermal stability of residual stresses in differently deep rolled material conditions of the steel SAE 1045.

Improving the stabilities of organic solar cells via employing a mixed cathode buffer layer

2021 ◽  
Vol 95 (3) ◽  
pp. 30201
Author(s):  
Xi Guan ◽  
Yufei Wang ◽  
Shang Feng ◽  
Jidong Zhang ◽  
Qingqing Yang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Solar Cells ◽  
Mixed Layer ◽  
Organic Solar Cells ◽  
Buffer Layers ◽  
Commercial Development ◽  
Conversion Efficiencies ◽  
Thermal Stability Of ◽  
Cathode Buffer Layers

Organic solar cells (OSCs) have been fabricated using cathode buffer layers based on bathocuproine (BCP) and 4,4'-N,N'-dicarbazole-biphenyl (CBP). It is found that despite nearly same power conversion efficiencies, the bilayer of BCP/CBP shows increased thermal stability of device than the monolayer of BCP, mostly because upper CBP thin film stabilizes under BCP thin film. The mixed layer of BCP:CBP gives slightly decreased efficiency than BCP and BCP/CBP, mostly because the electron mobility of the OSC using BCP:CBP is decreased than those using BCP and BCP/CBP. However, the BCP:CBP increases thermal stability of device than BCP and BCP/CBP, ascribed to that the BCP and CBP effectively inhibit reciprocal tendencies of crystallizations in the mixed layer. Moreover, the BCP:CBP improves the light stability of device than the BCP and BCP/CBP, because the energy transfer from BCP to CBP in in the mixed layer effectively decelerates the photodegradation of BCP. We provide a facial method to improve the stabilities of cathode buffer layers against heat and light, beneficial to the commercial development of OSCs.

scholarly journals Change in the stability of goat milk and cow milk due to pH and heat

2021 ◽  
Vol 233 ◽  
pp. 02046
Author(s):  
Xiaoxue Fan ◽  
Ming Cheng ◽  
Xiaoning Zhang ◽  
Cunfang Wang ◽  
Hua Jiang
Keyword(s):  
Thermal Stability ◽  
Milk Production ◽  
Ph Value ◽  
Goat Milk ◽  
Cow Milk ◽  
Type B ◽  
Fresh Milk ◽  
Ph Conditions ◽  
The Stability ◽  
Thermal Stability Of

This paper aimed to evaluate the changes in the thermal stability of goat milk, cow milk and homogenized milk under different pH conditions. The results showed that goat milk was of type B milk, and the thermal stability were positively correlated with the pH value. But cow milk was of type A milk, the most stable pH of fresh milk was 6.9, while it was 6.7 for homogenized cow milk. Compared with cow milk, the acidification of goat milk was stronger due to heat. Therefore, in the process of milk production, the germicidal heating conditions of two different milk sources should be determined according to their thermal stability.

scholarly journals Investigation of reactively sputtered TaN thin-film resistors for microwave photonic applications

2021 ◽  
pp. 93-98
Author(s):  
Evgenii Erofeev ◽  
Egor Polyntsev ◽  
Sergei Ishutkin
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Magnetron Sputtering ◽  
Electrical Resistance ◽  
High Thermal Stability ◽  
Tantalum Nitride ◽  
Reactive Magnetron ◽  
Microwave Photonic ◽  
Thin Film Resistors ◽  
Thermal Stability Of

Electrophysical characteristics and their thermal stability of thin-film resistors based on tantalum nitride (TaN) obtained by reactive magnetron sputtering were investigated. The optimal modes of the magnetron sputtering process are determined, ensuring the Ta2N phase film composition with the value of the specific electrical resistance of 250 μm cm and high thermal stability of the parameters. On the basis of the investigations carried out, thin-film matching resistors were manufactured for use as part of an electro-optical InP-based MZ modulator

Sign in / Sign up

Export Citation Format

Share Document