Multiple Donors in Zinc Oxide Substrates

2002 ◽  
Vol 719 ◽  
Author(s):  
K. Thonke ◽  
N. Kerwien ◽  
A. Wysmolek ◽  
M. Potemski ◽  
A. Waag ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Chemical Vapor ◽  
Binding Energies ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
Oxide Substrates ◽  
Multiple Donors ◽  
Major Donors ◽  
Available Zinc ◽  
Transport Technique

AbstractWe investigate by photoluminescence (PL) nominally undoped, commercially available Zinc Oxide substrates (from Eagle Picher) grown by seeded chemical vapor transport technique in order to identify residual donors and acceptors. In low temperature PL spectra the dominant emission comes from the decay of bound exciton lines at around 3.36 eV. Zeeman measurements allow the identification of the two strongest lines and some weaker lines in-between as donorrelated. From the associated two-electron satellite lines binding energies of the major donors of 48 meV and 55 meV, respectively, can be deduced.

Polarization dependent Raman spectroscopy characterization of kesterite Cu2ZnSnS4 single crystals

2013 ◽  
Vol 1538 ◽  
pp. 95-101 ◽  
Author(s):  
D. O. Dumcenco ◽  
Y. P. Wang ◽  
S. Levcenco ◽  
K. K. Tiong ◽  
Y. S. Huang
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystals ◽  
Theoretical Calculations ◽  
Chemical Vapor ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
Vibrational Properties ◽  
Scattering Measurements ◽  
Transport Technique

ABSTRACTThe vibrational properties of kesterite Cu2ZnSnS4 (CZTS) single crystals were studied by polarization-dependent Raman scattering measurements. The CZTS crystals grown by chemical vapor transport technique using iodine trichloride as a transport agent consist of several mirror-like planes. The detailed analysis of the experimental spectra obtained from different planes allows determining the symmetry assignment of the observed Raman-active modes. The wavenumber values of Raman-active modes are compared with the results of recent theoretical calculations. The presented data are useful for examination of CZTS absorber films applied for solar cells to clarify the existence of structural or phase inhomogeneities.

scholarly journals Post-processing ZnSe optical fibers with a micro-chemical vapor transport technique

2020 ◽  
Vol 10 (12) ◽  
pp. 3125
Author(s):  
Alex T. Hendrickson ◽  
Stephen C. Aro ◽  
Justin R. Sparks ◽  
Michael G. Coco ◽  
James P. Krug ◽  
...  
Keyword(s):  
Optical Fibers ◽  
Chemical Vapor ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
Post Processing ◽  
Transport Technique

Composition Dependent Band Gaps of Single Crystal Cu2ZnSn(SxSe1-x)4 Solid Solutions

2012 ◽  
Vol 194 ◽  
pp. 139-143 ◽  
Author(s):  
Yi Ping Wang ◽  
Sergiu Levcenco ◽  
Dumitru O. Dumcenco ◽  
Ying Sheng Huang ◽  
Ching Hwa Ho ◽  
...  
Keyword(s):  
Solid Solutions ◽  
Chemical Vapor ◽  
Vapor Transport ◽  
Band Gaps ◽  
Chemical Vapor Transport ◽  
X Ray Diffraction ◽  
X Ray ◽  
Vegard’S Law ◽  
Diffraction Patterns ◽  
Transport Technique

Single crystals of Cu2ZnSn(SxSe1-x)4(CZTSSe) solid solutions have deen grown by chemical vapor transport technique using ICl3as a transport agent. Analyzing the X-ray diffraction patterns reveal that the as-grown CZTSSe solid solutions are crystallized in kesterite structure and the lattice parameters are determined. The S contents of the obtained crystals are estimated by Vegard’s law. The composition dependent band gaps of CZTSSe solid solutions are studied by electrolyte electroreflectance (EER) techniques. The band gaps of CZTSSe are evaluated by a lineshape fit of the EER spectra and are found to increase almost linearly with the increase of S content.

Influence of oxygen atmosphere on the crystal growth of copper(II) oxide

1990 ◽  
Vol 5 (1) ◽  
pp. 53-56 ◽  
Author(s):  
Edward C. Milliken ◽  
James F. Cordaro
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Growth Process ◽  
Chemical Vapor ◽  
Single Crystal Growth ◽  
Oxygen Atmosphere ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
Partial Pressures ◽  
Transport Technique

Single crystal growth of CuO, synthetic tenorite, was accomplished in oxygen atmosphere by the chemical vapor transport technique. We present the first systematic study of the growth of CuO in various partial pressures of oxygen. Crystals were grown using trace, 0.1, and 0.5 atm partial pressures of oxygen. The growth temperatures used were 820 and 865 °C. Typical dimensions of the crystals obtained were 1 × 2 × 0.25 mm. We have shown that the stoichiometry of single crystal CuO can be controlled during the growth process. The crystals exhibited cation deficient stoichiometry, Cu1−xO, with x increasing from less than 0.005 with no added oxygen, up to 0.05 with 0.5 atm O2 when grown at 865 °C.

Van der Waals Growth of Thin TaS2on Layered Substrates by Chemical Vapor Transport Technique

2004 ◽  
Vol 43 (No. 2A) ◽  
pp. L123-L126 ◽  
Author(s):  
Hiroyuki Enomoto ◽  
Takanori Kawano ◽  
Masayuki Kawaguchi ◽  
Yoshiki Takano ◽  
Kazuko Sekizawa
Keyword(s):  
Van Der Waals ◽  
Chemical Vapor ◽  
Vapor Transport ◽  
Chemical Vapor Transport ◽  
Transport Technique

Growth of zinc oxide by chemical vapor transport

2005 ◽  
Vol 276 (3-4) ◽  
pp. 389-392 ◽  
Author(s):  
Makoto Mikami ◽  
Toshiaki Eto ◽  
JiFeng Wang ◽  
Yoshihiko Masa ◽  
Minoru Isshiki
Keyword(s):  
Zinc Oxide ◽  
Chemical Vapor ◽  
Vapor Transport ◽  
Chemical Vapor Transport
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