Влияние морфологии буферного слоя AlN на структурное качество полуполярного слоя GaN, выращенного на подложке Si(001), по данным просвечивающей электронной микроскопии
Keyword(s):
Structural features of the interface between semipolar gallium nitride layer and buffer layer of aluminum nitride grown on a SiC/Si(001) template misoriented by an angle of 7° were studied by high-resolution transmission electron microscopy. The effect of interface morphology on the structural quality of the gallium nitride layer is revealed: faceted structure the surface of the buffer layer reduces the threading dislocations density.
1997 ◽
Vol 179
(1-2)
◽
pp. 83-92
◽
1999 ◽
Vol 4
(1)
◽
2010 ◽
Vol 645-648
◽
pp. 367-370
◽
1996 ◽
Vol 14
(3)
◽
pp. 1739
◽
Keyword(s):
Keyword(s):