Non-Equilibrium Polymerization of Cross-β Amyloid for Temporal Control of Electronic Properties

Author(s):  
Chandranath Ghosh
2020 ◽  
Vol 59 (32) ◽  
pp. 13506-13510 ◽  
Author(s):  
Subhajit Bal ◽  
Chandranath Ghosh ◽  
Tapan Ghosh ◽  
Ratheesh K. Vijayaraghavan ◽  
Dibyendu Das

2020 ◽  
Vol 132 (32) ◽  
pp. 13608-13612 ◽  
Author(s):  
Subhajit Bal ◽  
Chandranath Ghosh ◽  
Tapan Ghosh ◽  
Ratheesh K. Vijayaraghavan ◽  
Dibyendu Das

2017 ◽  
Vol 46 (18) ◽  
pp. 5476-5490 ◽  
Author(s):  
Alessandro Sorrenti ◽  
Jorge Leira-Iglesias ◽  
Albert J. Markvoort ◽  
Tom F. A. de Greef ◽  
Thomas M. Hermans

Supramolecular polymers can reside in four distinct thermodynamic states. The preparation protocol and mechanistic insights allow to identify each one of them. Going beyond equilibrium polymerization is an exciting new direction in the field of supramolecular chemistry.


2014 ◽  
Vol 50 (3) ◽  
pp. 1350-1357 ◽  
Author(s):  
Archana Subramaniyan ◽  
John D. Perkins ◽  
Ryan P. O’Hayre ◽  
David S. Ginley ◽  
Stephan Lany ◽  
...  

RSC Advances ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 1400-1409 ◽  
Author(s):  
L. Sun ◽  
Z. H. Zhang ◽  
H. Wang ◽  
M. Li

Using the first-principles method based on density-functional theory and non-equilibrium Green's function, the electronic properties of zigzag ZPNRs terminated with NM atoms, as well as a pristine case, were studied systematically.


Author(s):  
Edward A Kenik

Segregation of solute atoms to grain boundaries, dislocations, and other extended defects can occur under thermal equilibrium or non-equilibrium conditions, such as quenching, irradiation, or precipitation. Generally, equilibrium segregation is narrow (near monolayer coverage at planar defects), whereas non-equilibrium segregation exhibits profiles of larger spatial extent, associated with diffusion of point defects or solute atoms. Analytical electron microscopy provides tools both to measure the segregation and to characterize the defect at which the segregation occurs. This is especially true of instruments that can achieve fine (<2 nm width), high current probes and as such, provide high spatial resolution analysis and characterization capability. Analysis was performed in a Philips EM400T/FEG operated in the scanning transmission mode with a probe diameter of <2 nm (FWTM). The instrument is equipped with EDAX 9100/70 energy dispersive X-ray spectrometry (EDXS) and Gatan 666 parallel detection electron energy loss spectrometry (PEELS) systems. A double-tilt, liquid-nitrogen-cooled specimen holder was employed for microanalysis in order to minimize contamination under the focussed spot.


Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.


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