scholarly journals Screen-Printed Flexible Thermoelectric Device Based on Hybrid Silver Selenide/PVP Composite Films

Nanomaterials ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 2042
Author(s):  
Dan Liu ◽  
Yaxin Zhao ◽  
Zhuqing Yan ◽  
Zhidong Zhang ◽  
Yanjun Zhang ◽  
...  

In recent years, the preparation of flexible thermoelectric generators by screen printing has attracted wide attention due to easy processing and high-volume production. In this work, we propose an n-type Ag2Se/polymer polyvinylpyrrolidone (PVP) film based on screen printing and investigate the effect of PVP on thermoelectric performance by varying the ratio of PVP. When the content ratio of Ag2Se to PVP is 30:1, i.e., PI30, the fabricated PI30 film has the best thermoelectric property. The maximum power factor (PF) of the PI30 is 4.3 μW·m−1·K−2, and conductivity reaches 81% of its initial value at 1500 bending cycles. Then, the film thermoelectric generator (F-TEG) fabricated by PI30 is tested for practical application; the output voltage and the maximum output power are 21.6 mV and 233.3 nW at the temperature difference of 40 K, respectively. This work demonstrates that the use of PVP combined with screen printing to prepare F-TEG is a simple and rapid method, which provides an efficient preparation solution for the development of environmentally friendly and wearable flexible thermoelectric devices.

2017 ◽  
Vol 727 ◽  
pp. 929-937
Author(s):  
Xu Yan Liu ◽  
Min Yang ◽  
Qiang Li ◽  
Deng Pan

WO3-NiO thin films have been prepared using WO3 and NiO, deposited on ITO conductive glass by the sol-gel spin coating technique, which has the advantages of simple operation, low cost and high volume production. The composition, surface morphology and electrochemical properties of the obtained films were carried out using X-ray diffraction (XRD), fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy (SEM) and electrochemical workstation. The experimental results show that after 450 °C calcination, it makes the structure of WO3/NiO obtained by sol-gel method from amorphous into crystalline. Finally, compared with the different films fabricated by different processes, the composite films of WO3 calcined at 450 °C and NiO can achieve the best electrochemical performance.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Jort Hammer ◽  
Hidenori Matsukami ◽  
Satoshi Endo

AbstractChlorinated Paraffins (CPs) are high volume production chemicals and have been found in various organisms including humans and in environmental samples from remote regions. It is thus of great importance to understand the physical–chemical properties of CPs. In this study, gas chromatographic (GC) retention indexes (RIs) of 25 CP congeners were measured on various polar and nonpolar columns to investigate the relationships between the molecular structure and the partition properties. Retention measurements show that analytical standards of individual CPs often contain several stereoisomers. RI values show that chlorination pattern have a large influence on the polarity of CPs. Single Cl substitutions (–CHCl–, –CH2Cl) generally increase polarity of CPs. However, many consecutive –CHCl– units (e.g., 1,2,3,4,5,6-C11Cl6) increase polarity less than expected from the total number of –CHCl– units. Polyparameter linear free energy relationship descriptors show that polarity difference between CP congeners can be explained by the H-bond donating properties of CPs. RI values of CP congeners were predicted using the quantum chemically based prediction tool COSMOthermX. Predicted RI values correlate well with the experimental data (R2, 0.975–0.995), indicating that COSMOthermX can be used to accurately predict the retention of CP congeners on GC columns.


1986 ◽  
Vol 67 ◽  
Author(s):  
Chris R. Ito ◽  
M. Feng ◽  
V. K. Eu ◽  
H. B. Kim

ABSTRACTA high-volume epitaxial reactor has been used to investigate the feasibility for the production growth of GaAs on silicon substrates. The reactor is a customized system which has a maximum capacity of 39 three-inch diameter wafers and can accommodate substrates as large as eight inches in diameter. The MOCVD material growth technique was used to grow GaAs directly on p-type, (100) silicon substrates, three and five inches in diameter. The GaAs surfaces were textured with antiphase boundaries. Double-cyrstal rocking curve measurements showed single-cyrstal GaAs with an average FWHMof 520 arc seconds measured at four points over the wafer surface. Within-wafer thickness uniformity was ± 4% with a wafer-to-wafer uniformity of ± 2%. Photoluminescence spectra showed Tour peaks at 1.500, 1.483, 1.464, and 1.440 ev. Schottky diodes were fabricated on the GaAs on silicon material.


2017 ◽  
Vol 52 (3) ◽  
pp. 395-404
Author(s):  
Xiuqi Lyu ◽  
Jun Takahashi ◽  
Yi Wan ◽  
Isamu Ohsawa

Chopped carbon fiber tape-reinforced thermoplastic material is specifically developed for the high-volume production of lightweight automobiles. With excellent design processability and flexibility, the carbon fiber tape-reinforced thermoplastic material is manufactured by compressing large amounts of randomly oriented, pre-impregnated unidirectional tapes in a plane. Therefore, the carbon fiber tape-reinforced thermoplastic material presents transversely isotropic properties. Transverse shear effect along the thickness direction of carbon fiber tape-reinforced thermoplastic beam has a distinct influence on its flexural deformation. Accordingly, the Timoshenko beam theory combined with vibration frequencies was proposed to determine the set of transverse flexural and shear moduli. Meanwhile, the transverse flexural and shear moduli of carbon fiber tape-reinforced thermoplastic beam were finally determined by fitting all the first seven measured and calculated eigenfrequencies with the least squares criterion. In addition, the suggested thickness to length ratio for the 3-point bending test and Euler–Bernoulli model was given.


2013 ◽  
Vol 1490 ◽  
pp. 185-190 ◽  
Author(s):  
Tomoyuki Nakamura ◽  
Kazuya Hatakeyama ◽  
Masahiro Minowa ◽  
Youhiko Mito ◽  
Koya Arai ◽  
...  

ABSTRACTThermoelectric power generation has been attracting attention as a technology for waste heat utilization in which thermal energy is directly converted into electric energy. It is well known that layered cobalt oxide compounds such as NaCo2O4 and Ca3Co4O9 have high thermoelectric properties in p-type oxide semiconductors. However, in most cases, the thermoelectric properties in n-type oxide materials are not as high. Therefore, n-type magnesium silicide (Mg2Si) has been studied as an alternative due to its non-toxicity, environmental friendliness, lightweight property, and comparative abundance compared with other TE systems. In this study, we fabricated π-structure thermoelectric power generation devices using p-type NaCo2O4 elements and n-type Mg2Si elements. The p- and n-type sintering bodies were fabricated by spark plasma sintering (SPS). To reduce the resistance at the interface between elements and electrodes, we processed the surface of the elements before fabricating the devices. The end face of a Mg2Si element was covered with Ni by SPS and that of a NaCo2O4 element was coated with Ag by silver paste and soldering.The thermoelectric device consisted of 18 pairs of p-type and n-type legs connected with Ag electrodes. The cross-sectional and thickness dimensions of the p-type elements were 3.0 mm × 5.0 mm × 7.6 mm (t) and those of the n-type elements were 3.0 mm × 3.0 mm × 7.6 mm (t). The open circuit voltage was 1.9 V and the maximum output power was 1.4 W at a heat source temperature of 873 K and a cooling water temperature of 283 K in air.


Sign in / Sign up

Export Citation Format

Share Document