Modeling the Effect of Beam Shaping at Selective Laser Melting

2015 ◽  
Vol 834 ◽  
pp. 85-92 ◽  
Author(s):  
Cyrill Eduardovich Protasov ◽  
Andrey Vladimirovich Gusarov

The influence of the laser-beam radial distribution of the energy flux density is theoretically studied for the Gaussian distribution (mode TEM00), and doughnut distribution of TEM01* mode for the values of the Peclet number from 0 to 3. The model of linear thermal conduction in the target indicates that profile TEM00 is the best for thermo-activated treatment processes that can be accomplished in a wide temperature range and profile TEM01* can be advantageous for a narrow range of the permissible processing temperature. If the phase transitions of melting/solidification and evaporation are included into the model, the estimate of the width of the laser-treated band is reduced but the tendencies predicted by the linear model are not changed.

2017 ◽  
Vol 23 ◽  
pp. 147-154 ◽  
Author(s):  
C.E. Protasov ◽  
A.V. Gusarov

Metals ◽  
2019 ◽  
Vol 10 (1) ◽  
pp. 21 ◽  
Author(s):  
Jun-Ren Zhao ◽  
Fei-Yi Hung ◽  
Truan-Sheng Lui

We used selective laser melting (SLM) Inconel 718 (coded AS) to carry out three heat treatment processes: (1) double aging (coded A), (2) solid solution + A (coded SA), (3) homogenization + SA (coded HSA) in order to investigate the effects of microstructure changes and tensile strength enhancement on erosion resistance. The as-SLM IN718 and three heat-treated specimens were subjected to clarify the effects of erosion-induced phase transformation on tensile mechanical properties. All heat-treated specimens showed better erosion resistance than as-SLM IN718 did at all impact angles. The as-SLM IN718 and the three heat-treated specimens produced new γ′ phase or metal-oxide via particle erosion, which increased the surface hardness of the material. The thickness of the erosion affected zone is 200 μm, which is the main cause of tensile embrittlement.


1969 ◽  
Vol 36 (2) ◽  
pp. 251-258 ◽  
Author(s):  
H. Burton ◽  
A. M. Cocks

SummaryIn correctly operated continuous heat-treatment plant the processing temperature is maintained at a sufficiently elevated level to give the desired thermal death rate for any micro-organisms present before treatment. This paper shows that if through imperfect operation of the plant, the processing temperature fluctuates about the required level, the chances of survival for bacteria and spores will theoretically be increased. Tabulated results show the magnitude of the effect under varying conditions and the compensating increase in processing temperature to counteract it.


2011 ◽  
Vol 94 (10) ◽  
pp. 3561-3569 ◽  
Author(s):  
Heather F. Jackson ◽  
Daniel D. Jayaseelan ◽  
Dario Manara ◽  
Carlo Perinetti Casoni ◽  
William E. Lee

1997 ◽  
Vol 192 (1) ◽  
pp. 177-185 ◽  
Author(s):  
V. M. Rizak ◽  
K. Al'-Shoufi ◽  
I. M. Rizak ◽  
Yu. M. Vysochanskii ◽  
V. Yu. Slivka

Author(s):  
G. Timp ◽  
L. Salamanca-Riba ◽  
L.W. Hobbs ◽  
G. Dresselhaus ◽  
M.S. Dresselhaus

Electron microscopy can be used to study structures and phase transitions occurring in graphite intercalations compounds. The fundamental symmetry in graphite intercalation compounds is the staging periodicity whereby each intercalate layer is separated by n graphite layers, n denoting the stage index. The currently accepted model for intercalation proposed by Herold and Daumas assumes that the sample contains equal amounts of intercalant between any two graphite layers and staged regions are confined to domains. Specifically, in a stage 2 compound, the Herold-Daumas domain wall model predicts a pleated lattice plane structure.


Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.


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