Inactivation ofEscherichia coli K12 Using Atmospheric Gas Plasma Produced from Humidified Working Gas

2003 ◽  
Vol 23 (4) ◽  
pp. 389-395 ◽  
Author(s):  
Y. Maeda ◽  
N. Igura ◽  
M. Shimoda ◽  
I. Hayakawa
Keyword(s):  
Ofescherichia Coli ◽  
Gas Plasma

Morphology and growth pattern of a rod-negativeenv B mutant ofEscherichia coli K12

1974 ◽  
Vol 14 (6) ◽  
pp. 465-477 ◽  
Author(s):  
G. D. Bloom ◽  
J. Gumpert ◽  
S. Normark ◽  
E. Schuhmann ◽  
U. Taubeneck ◽  
...  
Keyword(s):  
Growth Pattern ◽  
Ofescherichia Coli

Growth and cell division ofEscherichia coli 173-25 in the presence of some analogues of diaminopimelic acid

1974 ◽  
Vol 14 (4) ◽  
pp. 283-296 ◽  
Author(s):  
J. Chaloupka ◽  
M. Strnadová ◽  
J. Čáslavská ◽  
K. Vereš
Keyword(s):  
Cell Division ◽  
Ofescherichia Coli ◽  
Diaminopimelic Acid

Fatty acid composition of lipids ofEscherichia coli W 1655 F+ and its stable protoplast type L-form

1982 ◽  
Vol 22 (3) ◽  
pp. 169-174 ◽  
Author(s):  
J. Gumpert ◽  
W. Schade ◽  
D. Krebs ◽  
S. Baykousheva ◽  
E. Ivanova ◽  
...  
Keyword(s):  
Fatty Acid Composition ◽  
Fatty Acid ◽  
Acid Composition ◽  
Ofescherichia Coli

Improving the Organic Semiconductor- Metal Contact Interface in Printed High Performance Organic TFTs

2012 ◽  
Vol 1402 ◽  
Author(s):  
Kanan Puntambekar ◽  
Lisa Stecker ◽  
Kurt Ulmer ◽  
Themistokles Afentakis ◽  
Steven Droes
Keyword(s):  
Organic Semiconductor ◽  
High Performance ◽  
Thin Film Transistor ◽  
Device Performance ◽  
Organic Thin Film ◽  
Contact Interface ◽  
Organic Thin Film Transistor ◽  
Metal Electrodes ◽  
Free Surfaces ◽  
Gas Plasma

ABSTRACTOptimization of the interface between the organic semiconductor (OSC) & the source-drain (S/D) electrode is critical in order to improve organic thin film transistor (OTFT) device performance. This process typically involves coating the metal S/D electrodes with an optimal self-assembled thiol layer; a process that requires pristine metal surfaces for successful treatment. Obtaining contamination free surfaces can be challenging in the case of printed metal electrodes. Here we demonstrate an effective strategy to address this issue by introducing a brief low power forming gas plasma treatment prior to the surface coating step. We show a two orders of magnitude decrease in the contact resistance as a result of this treatment.

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