van der Waals Doping and Room Temperature Resonant Tunneling Observed in Black Phosphorus/Germanium Sulfide Transistors

2021 ◽  
pp. 2110251
Author(s):  
Abrar Alhazmi ◽  
Olaiyan Alolaiyan ◽  
Majed Alharbi ◽  
Saeed Alghamdi ◽  
Awsaf Alsulami ◽  
...  
2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Saurabh Dixit ◽  
Nihar Ranjan Sahoo ◽  
Abhishek Mall ◽  
Anshuman Kumar

AbstractMid-infrared (IR) spectral region is of immense importance for astronomy, medical diagnosis, security and imaging due to the existence of the vibrational modes of many important molecules in this spectral range. Therefore, there is a particular interest in miniaturization and integration of IR optical components. To this end, 2D van der Waals (vdW) crystals have shown great potential owing to their ease of integration with other optoelectronic platforms and room temperature operation. Recently, 2D vdW crystals of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2 \hbox {O}_5$$ V 2 O 5 have been shown to possess the unique phenomenon of natural in-plane biaxial hyperbolicity in the mid-infrared frequency regime at room temperature. Here, we report a unique application of this in-plane hyperbolicity for designing highly efficient, lithography free and extremely subwavelength mid-IR photonic devices for polarization engineering. In particular, we show the possibility of a significant reduction in the device footprint while maintaining an enormous extinction ratio from $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 based mid-IR polarizers. Furthermore, we investigate the application of sub-wavelength thin films of these vdW crystals towards engineering the polarization state of incident mid-IR light via precise control of polarization rotation, ellipticity and relative phase. We explain our results using natural in-plane hyperbolic anisotropy of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 via both analytical and full-wave electromagnetic simulations. This work provides a lithography free alternative for miniaturized mid-infrared photonic devices using the hyperbolic anisotropy of $$\alpha$$ α -$$\hbox {MoO}_{3}$$ MoO 3 and $$\alpha$$ α -$$\hbox {V}_2$$ V 2 $$\hbox {O}_5$$ O 5 .


2014 ◽  
Vol 2 (11) ◽  
pp. 1064-1069 ◽  
Author(s):  
Nilanthy Balakrishnan ◽  
Zakhar R. Kudrynskyi ◽  
Michael W. Fay ◽  
Garry W. Mudd ◽  
Simon A. Svatek ◽  
...  

CrystEngComm ◽  
2021 ◽  
Author(s):  
Weiyuan Wang ◽  
Jiyu Fan ◽  
Hao Liu ◽  
Huan Zheng ◽  
Chuanlan Ma ◽  
...  

Exploiting two-dimensional room temperature ferromagnetic materials is always a significant and valuable work. However, the actual number of satisfied materials with intrinsic ferromagnetism is very limited. Here, the van der...


Author(s):  
Agata Karolina Tołłoczko ◽  
Szymon J. Zelewski ◽  
Michał Błaszczak ◽  
Tomasz Woźniak ◽  
Anna Siudzińska ◽  
...  

Group-IV monochalcogenides, such as germanium selenide (GeSe) are strongly anisotropic semiconducting van der Waals crystals isoelectronic to black phosphorus, with superior stability in air conditions. High optical absorption, good conductivity,...


Small ◽  
2022 ◽  
pp. 2105916
Author(s):  
Tae Keun Yun ◽  
Yangjin Lee ◽  
Min Je Kim ◽  
Jeongwoo Park ◽  
Donghee Kang ◽  
...  

2018 ◽  
Vol 10 (41) ◽  
pp. 35615-35622 ◽  
Author(s):  
Bao-Wang Su ◽  
Xiao-Kuan Li ◽  
Xiao-Qiang Jiang ◽  
Wei Xin ◽  
Kai-Xuan Huang ◽  
...  

1992 ◽  
Vol 262 ◽  
Author(s):  
H. Yokoyama ◽  
K. Ikuta ◽  
N. Inoue

ABSTRACTWe investigate the intrinsic point defects in epilayers grown by atomic layer epitaxy (ALE). Ga vacancies and antisite As atoms in the epilayers are detected by photoluminescence spectroscopy. This shows that the ALE epilayer was grown under As-rich conditions. We propose increasing the TMG flux to reduce the number of point defects. With this method, the number of point defects in ALE epilayers can be decreased to less than that in conventionally grown epilayers. Moreover, it is'found that these point defects are formed by the incomplete Ga coverage, not by the steric hindrance as previously suggested. The carbon concentration is decreased by one order of magnitude by using nitrogen instead of hydrogen as the carrier gas. As an application of this low defect density, we fabricated a GaAs/AlAs resonant tunneling diode and observed the negative resistance at room temperature.


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