scholarly journals Tailored Optical Functionality by Combining Electron‐Beam and Focused Gold‐Ion Beam Lithography for Solid and Inverse Coupled Plasmonic Nanostructures

2020 ◽  
Vol 8 (19) ◽  
pp. 2000879
Author(s):  
Mario Hentschel ◽  
Julian Karst ◽  
Harald Giessen
Keyword(s):  
Electron Beam ◽  
Ion Beam ◽  
Plasmonic Nanostructures ◽  
Ion Beam Lithography ◽  
Gold Ion

scholarly journals Comparative study of plasmonic antennas fabricated by electron beam and focused ion beam lithography

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Michal Horák ◽  
Kristýna Bukvišová ◽  
Vojtěch Švarc ◽  
Jiří Jaskowiec ◽  
Vlastimil Křápek ◽  
...  
Keyword(s):  
Electron Beam ◽  
Comparative Study ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Lithography

High Resolution Resists for Next Generation Lithography: The Nanocomposite Approach

2000 ◽  
Vol 636 ◽  
Author(s):  
Kenneth E. Gonsalves ◽  
Hengpeng Wu ◽  
Yongqi Hu ◽  
Lhadi Merhari
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Electron Beam Lithography ◽  
Ion Beam ◽  
Proximity Effects ◽  
Next Generation ◽  
Polyhedral Oligosilsesquioxane ◽  
Ion Beam Lithography ◽  
New Class ◽  
Next Generation Lithography

AbstractThe SIA roadmap predicts mass production of sub-100 nm resolution circuits by 2006. This not only imposes major constraints on next generation lithographic tools but also requires that new resists capable of accommodating such a high resolution be synthesized and developed concurrently. Except for ion beam lithography, DUV, X-ray, and in particular electron beam lithography suffer significantly from proximity effects, leading to severe degradation of resolution in classical resists. We report a new class of resists based on organic/inorganic nanocomposites having a structure that reduces the proximity effects. Synthetic routes are described for a ZEP520®nano-SiO2 resist where 47nm wide lines have been written with a 40 nm diameter, 20 keV electron beam at no sensitivity cost. Other resist systems based on polyhedral oligosilsesquioxane copolymerized with MMA, TBMA, MMA and a proprietary PAG are also presented. These nanocomposite resists suitable for DUV and electron beam lithography show enhancement in both contrast and RIE resistance in oxygen. Tentative mechanisms responsible for proximity effect reduction are also discussed.

Development of Nickel-Based Negative Tone Metal Oxide Cluster Resists for Sub-10 nm Electron Beam and Helium Ion Beam Lithography

2020 ◽  
Vol 12 (17) ◽  
pp. 19616-19624 ◽  
Author(s):  
Rudra Kumar ◽  
Manvendra Chauhan ◽  
Mohamad G. Moinuddin ◽  
Satinder K. Sharma ◽  
Kenneth E. Gonsalves
Keyword(s):  
Electron Beam ◽  
Metal Oxide ◽  
Ion Beam ◽  
Oxide Cluster ◽  
Ion Beam Lithography ◽  
Helium Ion ◽  
Metal Oxide Cluster ◽  
Negative Tone

Enhancement of Raman scattering in Subwave plasmonic nanostructures formed by ion-beam lithography

2014 ◽  
Vol 59 (1) ◽  
pp. 125-131 ◽  
Author(s):  
D. A. Mamichev ◽  
I. A. Kuznetsov ◽  
A. V. Andreev ◽  
A. A. Konovko ◽  
V. A. Drynkin ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Ion Beam ◽  
Plasmonic Nanostructures ◽  
Ion Beam Lithography

Organoiodine Functionality Bearing Resists for Electron-Beam and Helium Ion Beam Lithography: Complex and Sub-16 nm Patterning

2021 ◽  
Author(s):  
Midathala Yogesh ◽  
Mohamad. G. Moinuddin ◽  
Manvendra Chauhan ◽  
Satinder K. Sharma ◽  
Subrata Ghosh ◽  
...  
Keyword(s):  
Electron Beam ◽  
Ion Beam ◽  
Ion Beam Lithography ◽  
Helium Ion

Recent Progress in Nano-electronic Devices Based on EBL and IBL

2020 ◽  
Vol 16 (2) ◽  
pp. 157-169
Author(s):  
Yusheng Pan ◽  
Ke Xu
Keyword(s):  
Electron Beam ◽  
Electronic Properties ◽  
Electron Beam Lithography ◽  
Recent Progress ◽  
Ion Beam ◽  
Electronic Devices ◽  
Ion Beam Lithography ◽  
Similarities And Differences

Electron beam lithography (EBL) and ion beam lithography (IBL) are extremely promising nanofabrication techniques for building nano-electronic devices due to their outstanding physical and electronic properties. In this review, an overview of EBL and IBL and a comparison of nanoelectronics fabricated based on four types of materials, namely graphene, ZnO, TiO2 and Ge, are presented. In each type of material, numerous practical examples are also provided in the illustration. Later, the strengths and weaknesses of EBL and IBL are presented in details. Finally, the similarities and differences between the two techniques are discussed and concluded.

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

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