High‐Stability Patterned CsPbI x Br 3− x Thin Films with Tunable Crystal Size Prepared by Solid‐Phase Reaction

2018 ◽

Vol 60 (7) ◽

pp. 1397

Author(s):

Р.Р. Алтунин ◽

Е.Т. Моисеенко ◽

С.М. Жарков

Keyword(s):

Thin Films ◽

Electron Diffraction ◽

Phase Transformations ◽

Solid Phase ◽

Structural Phase ◽

Solid Phase Reaction ◽

Phase Reaction ◽

Formation Heat ◽

Structural Phase Transformations

AbstractA sequence of phases forming during the solid-phase reaction in Al/Pt bilayer thin films has been investigated by in situ electron diffraction. It is shown that the amorphous PtAl_2 phase forms first during the solid-phase reaction initiated by heating. Upon further heating, PtAl_2, Pt_2Al_3, PtAl, and Pt_3Al crystalline phases sequentially form, which is qualitatively consistent with an effective formation heat model. The content of phases forming during the reaction has been quantitatively analyzed and the structural phase transformations have been examined.

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Preparation of manganese silicide thin films by solid phase reaction

Applied Surface Science ◽

10.1016/s0169-4332(96)00823-9 ◽

1997 ◽

Vol 113-114 ◽

pp. 53-56 ◽

Cited By ~ 41

Author(s):

Jinliang Wang ◽

Masaaki Hirai ◽

Masahiko Kusaka ◽

Motohiro Iwami

Keyword(s):

Thin Films ◽

Solid Phase ◽

Solid Phase Reaction ◽

Phase Reaction ◽

Manganese Silicide

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7328. Solid phase reaction of molybdenum-nickel alloy thin films with silicon

Vacuum ◽

10.1016/0042-207x(91)91135-b ◽

1991 ◽

Vol 42 (8-9) ◽

pp. 586

Keyword(s):

Thin Films ◽

Nickel Alloy ◽

Solid Phase ◽

Solid Phase Reaction ◽

Phase Reaction

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Formation of Superconducting Y-Ba-Cu-O Thin Films by the Solid Phase Reaction between BaCo3/Cu/Y2O3Layers on Single Crystalline SrTiO3Substrate

Japanese Journal of Applied Physics ◽

10.1143/jjap.26.l1451 ◽

1987 ◽

Vol 26 (Part 2, No. 9) ◽

pp. L1451-L1452 ◽

Cited By ~ 6

Author(s):

Yoshio Sorimachi ◽

Akihito Kobayashi ◽

Tsutomu Yamashita ◽

Masasuke Takata ◽

Shinnosuke Miyauchi ◽

...

Keyword(s):

Thin Films ◽

Solid Phase ◽

Solid Phase Reaction ◽

Phase Reaction ◽

Single Crystalline

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Solid phase reaction of molybdenum‐nickel alloy thin films with silicon

Journal of Applied Physics ◽

10.1063/1.345143 ◽

1990 ◽

Vol 67 (10) ◽

pp. 6269-6273

Author(s):

R. S. Rastogi ◽

V. D. Vankar ◽

K. L. Chopra

Keyword(s):

Thin Films ◽

Nickel Alloy ◽

Solid Phase ◽

Solid Phase Reaction ◽

Phase Reaction

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Characterization of Zirconium Germanosilicide Formed by Solid State Reaction of ZR With Sil−xGex Alloys

MRS Proceedings ◽

10.1557/proc-402-387 ◽

1995 ◽

Vol 402 ◽

Cited By ~ 1

Author(s):

Z. Wang ◽

D. B. Aldrich ◽

P. Goeller ◽

R. J. Nemanich ◽

D. E. Sayers

Keyword(s):

Thin Films ◽

Solid State ◽

Sheet Resistance ◽

Solid State Reaction ◽

Solid Phase ◽

Solid Phase Reaction ◽

Phase Reaction ◽

Final Phase ◽

The Stability

AbstractWe have investigated the electrical and structural properties of zirconium germanosilicide (Zr-Si-Ge) films formed during the Zr-Sil−xGex solid state reaction. Thin films of C49 Zr(Si1−xGex)2 were formed from the solid phase reaction of Zr and Si1−xGex bilayer structures. It was observed that Zr reacts uniformly with the Sil−xGex alloy and that C49 Zr(Si1−x Gex)2 is the final phase of the Zr-Si1−xGex, solid phase reaction (such tht y = x) for all compositions examined (x = 0.20, 0.33, and 0.50). The sheet resistance of the Zr(Si1−xGex)2 thin films were higher than the sheet resistance measured for ZrSi2 films. The stability of Zr(Sil−x Gex)2 in contact with Si1−Gex was investigated and no germanium segregation was detected in the Zr(Si1−xGex)2/Si1−Gex structures.

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