scholarly journals High‐Performance Daytime Radiative Cooler and Near‐Ideal Selective Emitter Enabled by Transparent Sapphire Substrate

2020 ◽  
Vol 7 (19) ◽  
pp. 2001577
Author(s):  
Dongwoo Chae ◽  
Soomin Son ◽  
Yuting Liu ◽  
Hangyu Lim ◽  
Heon Lee
Keyword(s):  
Sapphire Substrate ◽  
High Performance ◽  
Selective Emitter

scholarly journals Combined selective emitter and filter for high performance incandescent lighting

2017 ◽  
Vol 111 (9) ◽  
pp. 094103 ◽  
Author(s):  
Arny Leroy ◽  
Bikram Bhatia ◽  
Kyle Wilke ◽  
Ognjen Ilic ◽  
Marin Soljačić ◽  
...  
Keyword(s):  
High Performance ◽  
Selective Emitter

scholarly journals High-performance Acetone Soluble Tape Transfer Printing Method for Heterogeneous Integration

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Jiaqi Zhang ◽  
Yichang Wu ◽  
Zhe Li ◽  
Yachao Zhang ◽  
Yue Peng ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
High Performance ◽  
Water Soluble ◽  
Experimental Results ◽  
Heterogeneous Integration ◽  
Transfer Printing ◽  
Adhesion Promoter ◽  
Thermal Release ◽  
Printing Method

Abstract A high-performance transfer printing method using a new soluble tape which can be dissolved in acetone is proposed to be used in heterogeneous integration. Si inks array was transferred from SOI wafers onto various substrates without adhesion promoter by this new method which we refer to as the acetone soluble tape (AST) method to compare with other transfer printing methods by using thermal release tape (TRT), water soluble tape (WST) and polydimethylsiloxane (PDMS). By using the AST method, the transfer printing process does not involve interface contention between stamp/inks and inks/receiver substrate so that it maximizes the transfer printing efficiency. Experimental results present the AST method has good performances, and various alien substrates, even curvilinear surfaces, can be selected as receiver substrates by the AST method. To examine the quality of the transferred Si inks, the Si TFTs were fabricated by using the Si membrane transferred by the AST method on sapphire substrate and the devices show the good performance. All the results confirm that the AST method is an effective method in heterogeneous integration.

High-Performance GaN-Based Light-Emitting Diodes on Patterned Sapphire Substrate with a Novel Patterned SiO2/Al2O3Passivation Layer

2013 ◽  
Vol 6 (7) ◽  
pp. 072103 ◽  
Author(s):  
Hao Guo ◽  
Xiong Zhang ◽  
Hongjun Chen ◽  
Honggang Liu ◽  
Peiyuan Zhang ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Patterned Sapphire Substrate ◽  
Light Emitting

Advantages of the moth-eye patterned sapphire substrate for the high performance nitride based LEDs

2014 ◽  
Vol 11 (3-4) ◽  
pp. 771-774 ◽  
Author(s):  
Toshiyuki Kondo ◽  
Tsukasa Kitano ◽  
Atsushi Suzuki ◽  
Midori Mori ◽  
Koichi Naniwae ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
High Performance ◽  
Patterned Sapphire Substrate

Implementation of a High-Performance GaN-Based Light-Emitting Diode Grown on a Nanocomb-Shaped Patterned Sapphire Substrate

2014 ◽  
Vol 50 (12) ◽  
pp. 973-980 ◽  
Author(s):  
Jian-Kai Liou ◽  
Chun-Chia Chen ◽  
Po-Cheng Chou ◽  
Zong-Jie Tsai ◽  
Yu-Chih Chang ◽  
...  
Keyword(s):  
Sapphire Substrate ◽  
High Performance ◽  
Light Emitting Diode ◽  
Patterned Sapphire Substrate ◽  
Light Emitting
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