Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109

Kyung Jean Yoon; Gun Hwan Kim; Sijung Yoo; Woorham Bae; Jung Ho Yoon; Tae Hyung Park; Dae Eun Kwon; Yeong Jae Kwon; Hae Jin Kim; Yu Min Kim; Cheol Seong Hwang

doi:10.1002/aelm.201700152

Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109

Advanced Electronic Materials ◽

10.1002/aelm.201700152 ◽

2017 ◽

Vol 3 (7) ◽

pp. 1700152 ◽

Cited By ~ 22

Author(s):

Kyung Jean Yoon ◽

Gun Hwan Kim ◽

Sijung Yoo ◽

Woorham Bae ◽

Jung Ho Yoon ◽

...

Keyword(s):

Double Layer ◽

Resistive Switching ◽

Rectification Ratio ◽

Resistive Switching Memory ◽

Crossbar Array ◽

Switching Memory

Get full-text (via PubEx)

Next-Generation Memory: Double-Layer-Stacked One Diode-One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109 (Adv. Electron. Mater. 7/2017)

Advanced Electronic Materials ◽

10.1002/aelm.201770028 ◽

2017 ◽

Vol 3 (7) ◽

Cited By ~ 1

Author(s):

Kyung Jean Yoon ◽

Gun Hwan Kim ◽

Sijung Yoo ◽

Woorham Bae ◽

Jung Ho Yoon ◽

...

Keyword(s):

Double Layer ◽

Resistive Switching ◽

Rectification Ratio ◽

Next Generation ◽

Resistive Switching Memory ◽

Crossbar Array ◽

Switching Memory

Get full-text (via PubEx)

Kernel Application of the Stacked Crossbar Array Composed of Self‐Rectifying Resistive Switching Memory for Convolutional Neural Networks

Advanced Intelligent Systems ◽

10.1002/aisy.201900116 ◽

2019 ◽

Vol 2 (2) ◽

pp. 1900116

Author(s):

Yumin Kim ◽

Jihun Kim ◽

Seung Soo Kim ◽

Young Jae Kwon ◽

Gil Seop Kim ◽

...

Keyword(s):

Neural Networks ◽

Convolutional Neural Networks ◽

Resistive Switching ◽

Resistive Switching Memory ◽

Crossbar Array ◽

Switching Memory

Get full-text (via PubEx)

A low power selector-less crossbar array with complementary resistive-switching memory

2016 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC) ◽

10.1109/edssc.2016.7785279 ◽

2016 ◽

Cited By ~ 1

Author(s):

Jang-Woo Ryu ◽

Kee-Won Kwon

Keyword(s):

Low Power ◽

Resistive Switching ◽

Resistive Switching Memory ◽

Crossbar Array ◽

Switching Memory

Get full-text (via PubEx)

Selectorless Oxide-Based Resistive Switching Memory with Nonuniform Dielectric for Low Power Crossbar Array Applications

ECS Transactions ◽

10.1149/08903.0045ecst ◽

2019 ◽

Vol 89 (3) ◽

pp. 45-51 ◽

Cited By ~ 3

Author(s):

Ying-Chen Chen ◽

Chao-Cheng Lin ◽

Sungjun Kim ◽

Jack C. Lee

Keyword(s):

Low Power ◽

Resistive Switching ◽

Resistive Switching Memory ◽

Crossbar Array ◽

Switching Memory

Get full-text (via PubEx)

Switching characteristics in TiO2/ZnO double layer resistive switching memory device

Materials Research Express ◽

10.1088/2053-1591/aa731e ◽

2017 ◽

Vol 4 (6) ◽

pp. 065901 ◽

Cited By ~ 3

Author(s):

Praveen K Jain ◽

Mohammad Salim ◽

Umesh Chand ◽

C Periasamy

Keyword(s):

Double Layer ◽

Resistive Switching ◽

Memory Device ◽

Resistive Switching Memory ◽

Switching Characteristics ◽

Switching Memory

Get full-text (via PubEx)

Selectorless Oxide-based Resistive Switching Memory with Nonuniform Dielectric for Low Power Crossbar Array Applications

ECS Meeting Abstracts ◽

10.1149/ma2019-01/23/1168 ◽

2019 ◽

Keyword(s):

Low Power ◽

Resistive Switching ◽

Resistive Switching Memory ◽

Crossbar Array ◽

Switching Memory

Get full-text (via PubEx)

Fully Si compatible SiN resistive switching memory with large self-rectification ratio

AIP Advances ◽

10.1063/1.4941364 ◽

2016 ◽

Vol 6 (1) ◽

pp. 015021 ◽

Cited By ~ 19

Author(s):

Sungjun Kim ◽

Seongjae Cho ◽

Byung-Gook Park

Keyword(s):

Resistive Switching ◽

Rectification Ratio ◽

Resistive Switching Memory ◽

Switching Memory

Get full-text (via PubEx)

A versatile multifaceted resistive switching memory activated by light and ion irradiation in poly (3-octylthiophene)-zinc oxide hybrids

Organic Electronics ◽

10.1016/j.orgel.2020.105932 ◽

2020 ◽

Vol 87 ◽

pp. 105932 ◽

Cited By ~ 1

Author(s):

Jitendra Singh ◽

R.G. Singh ◽

Subodh K. Gautam ◽

Himanshi Gupta ◽

Fouran Singh

Keyword(s):

Zinc Oxide ◽

Resistive Switching ◽

Ion Irradiation ◽

Resistive Switching Memory ◽

Switching Memory

Get full-text (via PubEx)

Resistive Switching Memory: Smart Design of Resistive Switching Memory by an In Situ Current‐Induced Oxidization Process on a Single Crystalline Metallic Nanowire (Adv. Electron. Mater. 5/2021)

Advanced Electronic Materials ◽

10.1002/aelm.202170015 ◽

2021 ◽

Vol 7 (5) ◽

pp. 2170015

Author(s):

Yu‐Chuan Shih ◽

Ling Lee ◽

Kai‐De Liang ◽

Arumugam Manikandan ◽

Wen‐Wu Liu ◽

...

Keyword(s):

Resistive Switching ◽

Single Crystalline ◽

Resistive Switching Memory ◽

Switching Memory

Get full-text (via PubEx)

Polymer Nanocomposites for Resistive Switching Memory

Polymer Nanocomposite Materials ◽

10.1002/9783527826490.ch8 ◽

2021 ◽

pp. 211-246

Author(s):

Qazi Muhammad Saqib ◽

Muhammad Umair Khan ◽

Jinho Bae

Keyword(s):

Polymer Nanocomposites ◽

Resistive Switching ◽

Resistive Switching Memory ◽

Switching Memory

Get full-text (via PubEx)