ChemInform Abstract: Optimized Deposition Parameters for Low Pressure Chemical Vapor Deposited Titanium Silicide.

V. ILDEREM; R. REIF

doi:10.1002/chin.198905324

ChemInform Abstract: Optimized Deposition Parameters for Low Pressure Chemical Vapor Deposited Titanium Silicide.

ChemInform ◽

10.1002/chin.198905324 ◽

1989 ◽

Vol 20 (5) ◽

Author(s):

V. ILDEREM ◽

R. REIF

Keyword(s):

Chemical Vapor ◽

Low Pressure ◽

Titanium Silicide ◽

Deposition Parameters ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Optimized Deposition Parameters for Low Pressure Chemical Vapor Deposited Titanium Silicide

Journal of The Electrochemical Society ◽

10.1149/1.2095387 ◽

1988 ◽

Vol 135 (10) ◽

pp. 2590-2596 ◽

Cited By ~ 33

Author(s):

V. Ilderem ◽

R. Reif

Keyword(s):

Chemical Vapor ◽

Low Pressure ◽

Titanium Silicide ◽

Deposition Parameters ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Effect of Deposition Parameters on the Characteristics of Low-Pressure Chemical Vapor Deposited SiGe Films Grown from Si[sub 2]H[sub 6] and GeH[sub 4]

Journal of The Electrochemical Society ◽

10.1149/1.1399277 ◽

2001 ◽

Vol 148 (10) ◽

pp. C685 ◽

Cited By ~ 21

Author(s):

J. Olivares ◽

J. Sangrador ◽

A. Rodrı́guez ◽

T. Rodrı́guez

Keyword(s):

Chemical Vapor ◽

Low Pressure ◽

Deposition Parameters ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Suppression and characterization of interface states at low-pressure-chemical-vapor-deposited SiN /III-nitride heterostructures

Applied Surface Science ◽

10.1016/j.apsusc.2020.148530 ◽

2021 ◽

Vol 542 ◽

pp. 148530

Author(s):

Kexin Deng ◽

Xinhua Wang ◽

Sen Huang ◽

Haibo Yin ◽

Jie Fan ◽

...

Keyword(s):

Chemical Vapor ◽

Low Pressure ◽

Interface States ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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ChemInform Abstract: Rapid Thermal Annealed Low Pressure Chemical-Vapor-Deposited SiO2 as Gate Dielectric in Silicon MOSFET′s.

ChemInform ◽

10.1002/chin.198736362 ◽

1987 ◽

Vol 18 (36) ◽

Author(s):

S. ANG ◽

S. WILSON

Keyword(s):

Gate Dielectric ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Analysis of low‐pressure chemical vapor deposited silicon nitride by Rutherford backscattering spectrometry

Applied Physics Letters ◽

10.1063/1.93714 ◽

1982 ◽

Vol 41 (9) ◽

pp. 844-846 ◽

Cited By ~ 7

Author(s):

H. L. Hwang ◽

C. C. Hwu ◽

J. C. Liue ◽

H. H. Lin

Keyword(s):

Silicon Nitride ◽

Rutherford Backscattering Spectrometry ◽

Chemical Vapor ◽

Low Pressure ◽

Rutherford Backscattering ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Low Pressure Chemical Vapor Deposited Tungsten Silicide For GaAs ICs

10.1117/12.941044 ◽

1987 ◽

Author(s):

Min-Shyong Lin ◽

Hen-Chang Chou

Keyword(s):

Chemical Vapor ◽

Low Pressure ◽

Tungsten Silicide ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Annealing and oxidation behavior of low‐pressure chemical vapor deposited tungsten slicide layers on polycrystalline silicon gates

Journal of Applied Physics ◽

10.1063/1.339414 ◽

1987 ◽

Vol 62 (7) ◽

pp. 2830-2835 ◽

Cited By ~ 10

Author(s):

D. K. Sadana ◽

A. E. Morgan ◽

M. H. Norcott ◽

S. Naik

Keyword(s):

Polycrystalline Silicon ◽

Oxidation Behavior ◽

Chemical Vapor ◽

Low Pressure ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Properties of low‐pressure chemical vapor deposited dielectric films from hexamethyldisilazane

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.576300 ◽

1989 ◽

Vol 7 (3) ◽

pp. 1446-1450 ◽

Cited By ~ 7

Author(s):

Dean Freeman ◽

Werner Kern

Keyword(s):

Chemical Vapor ◽

Low Pressure ◽

Dielectric Films ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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Thermal annealing effect on ultraviolet-light-induced leakage current in low-pressure chemical vapor deposited silicon nitride films

Thin Solid Films ◽

10.1016/j.tsf.2013.10.163 ◽

2014 ◽

Vol 550 ◽

pp. 545-553 ◽

Cited By ~ 7

Author(s):

Kiyoteru Kobayashi ◽

Aran Suzuki ◽

Kokichi Ishikawa

Keyword(s):

Silicon Nitride ◽

Leakage Current ◽

Thermal Annealing ◽

Ultraviolet Light ◽

Chemical Vapor ◽

Low Pressure ◽

Annealing Effect ◽

Silicon Nitride Films ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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The Bonding Structure and Compositional Analysis of Plasma Enhanced and Low Pressure Chemical Vapor Deposited Silicon Dielectric Films

Emerging Semiconductor Technology ◽

10.1520/stp25750s ◽

2008 ◽

pp. 173-173-17

Author(s):

SV Nguyen ◽

JR Abernathey ◽

SA Fridmann ◽

ML Gibson

Keyword(s):

Compositional Analysis ◽

Chemical Vapor ◽

Low Pressure ◽

Dielectric Films ◽

Bonding Structure ◽

Chemical Vapor Deposited ◽

Pressure Chemical

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