Modeling the threshold voltage of PNIN SSOI tunnel field-effect transistor

2015 ◽  
Vol 29 (3) ◽  
pp. 458-464
Author(s):  
Yuchen Li ◽  
Shulin Liu ◽  
Jun Tong ◽  
Yan Zhang
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Junctionless Tunnel Field Effect Transistor with Nonuniform Doping

2015 ◽  
Vol 14 (03) ◽  
pp. 1450025 ◽  
Author(s):  
Yogesh Goswami ◽  
Pranav Asthana ◽  
Shibir Basak ◽  
Bahniman Ghosh
Keyword(s):  
Gallium Arsenide ◽  
Indium Arsenide ◽  
Threshold Voltage ◽  
Indium Antimonide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Double Gate ◽  
Short Channel ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

In this paper, the dc performance of a double gate Junctionless Tunnel Field Effect Transistor (DG-JLTFET) has been further enhanced with the implementation of double sided nonuniform Gaussian doping in the channel. The device has been simulated for different channel materials such as Si and various III-V compounds like Gallium Arsenide, Aluminium Indium Arsenide and Aluminium Indium Antimonide. It is shown that Gaussian doped channel Junctionless Tunnel Field Effect Transistor purveys higher ION/IOFF ratio, lower threshold voltage and sub-threshold slope and also offers better short channel performance as compared to JLTFET with uniformly doped channel.

Double-gate tunnel field-effect transistor: Gate threshold voltage modeling and extraction

2014 ◽  
Vol 21 (2) ◽  
pp. 587-592 ◽  
Author(s):  
Yu-chen Li ◽  
He-ming Zhang ◽  
Hui-yong Hu ◽  
Yu-ming Zhang ◽  
Bin Wang ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Double Gate ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Ge-Source Based L-Shaped Tunnel Field Effect Transistor for Low Power Switching Application

2021 ◽  
Author(s):  
Sweta Chander ◽  
Sanjeet Kumar Sinha ◽  
Rekha Chaudhary ◽  
Avtar Singh
Keyword(s):  
Low Power ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Gate Dielectric ◽  
Bandgap Engineering ◽  
Power Switching ◽  
Current Threshold ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Abstract In this work, the performance of the heterojunction L-Tunnel Field Effect Transistor (LTFET) has been analyzed with different engineering techniques such as bandgap engineering, pocket engineering, work-function engineering, and gate dielectric engineering, respectively. The electrical characteristics of the device has been investigated by using Synopsys Sentaurus TCAD tool and compared with some recent other TFETs. The proposed Ge-source L-TFET device with n-type pocket shows ON-state current of 2.12*10-5 Aµm-1, OFF-state current of 1.09*10-13 Aµm-1, current ratio of ~108 and sub-threshold slope (SS) of 21 mV/decade and the threshold voltage of 0.26 V and compared to the conventional Si/Ge source L-shaped TFETs without pocket simulation result. The pocket engineering techniques suppress the leakage without degrading the ON current, threshold voltage and SS of the proposed device. The simplified fabrication steps of the proposed device have also been discussed. The proposed L-TFET is free from ambipolarity issues and can be used to develop low-power switching devices.

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor
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