Monolayer‐range compositional modulations in Al x Ga 1‐x N(x=0.6‐0.75) layers grown using plasma‐assisted molecular beam epitaxy under Me‐rich conditions with an off‐centered spatial distribution of activated nitrogen flux

Author(s):  
Valentin Jmerik ◽  
Dmitrii Nechaev ◽  
Maria Yagovkina ◽  
Alla Sitnikova ◽  
Sergey Troshkov ◽  
...  
2020 ◽  
Vol 544 ◽  
pp. 125720
Author(s):  
Marta Sawicka ◽  
Natalia Fiuczek ◽  
Paweł Wolny ◽  
Anna Feduniewicz-Żmuda ◽  
Marcin Siekacz ◽  
...  

2008 ◽  
Vol 42 (5) ◽  
pp. 616-623 ◽  
Author(s):  
V. N. Jmerik ◽  
A. M. Mizerov ◽  
T. V. Shubina ◽  
D. S. Plotnikov ◽  
M. V. Zamoryanskaya ◽  
...  

2007 ◽  
Vol 33 (4) ◽  
pp. 333-336 ◽  
Author(s):  
V. N. Jmerik ◽  
A. M. Mizerov ◽  
T. V. Shubina ◽  
S. B. Listoshin ◽  
S. V. Ivanov

Author(s):  
C.B. Carter ◽  
D.M. DeSimone ◽  
T. Griem ◽  
C.E.C. Wood

Molecular-beam epitaxy (MBE) is potentially an extremely valuable tool for growing III-V compounds. The value of the technique results partly from the ease with which controlled layers of precisely determined composition can be grown, and partly from the ability that it provides for growing accurately doped layers.


Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove ◽  
R. T. Tung

The cobalt disilicide/silicon system has potential applications as a metal-base and as a permeable-base transistor. Although thin, low defect density, films of CoSi2 on Si(111) have been successfully grown, there are reasons to believe that Si(100)/CoSi2 may be better suited to the transmission of electrons at the silicon/silicide interface than Si(111)/CoSi2. A TEM study of the formation of CoSi2 on Si(100) is therefore being conducted. We have previously reported TEM observations on Si(111)/CoSi2 grown both in situ, in an ultra high vacuum (UHV) TEM and ex situ, in a conventional Molecular Beam Epitaxy system.The procedures used for the MBE growth have been described elsewhere. In situ experiments were performed in a JEOL 200CX electron microscope, extensively modified to give a vacuum of better than 10-9 T in the specimen region and the capacity to do in situ sample heating and deposition. Cobalt was deposited onto clean Si(100) samples by thermal evaporation from cobalt-coated Ta filaments.


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