Effect of process parameters on the mechanical properties of carbon nitride thin films synthesized by plasma assisted pulsed laser deposition

2004 ◽  
Vol 79 (4-6) ◽  
pp. 1365-1367 ◽  
Author(s):  
M. Tabbal ◽  
P. Mérel ◽  
M. Chaker
Carbon ◽  
1998 ◽  
Vol 36 (5-6) ◽  
pp. 771-774 ◽  
Author(s):  
Y. Suda ◽  
T. Nakazono ◽  
K. Ebihara ◽  
K. Baba ◽  
S. Aoqui

1993 ◽  
Vol 327 ◽  
Author(s):  
Randolph E. Treece ◽  
James S. Horwitz ◽  
Douglas B. Chrisey

AbstractThin films of diamond and diamond-like carbon (DLC) are technologically important materials that serve as hard, scratch resistant and chemically inert coatings for tools and optics. Recent calculations suggest that β-C3N4 should be harder than diamond. We have deposited carbon nitride (CNx) thin films by pulsed laser deposition. The films were grown from a graphite target in a nitrogen background. The nitrogen source was either (a) a N2 gas atmosphere, or (b) a N2+/N+ ion beam generated by a Kaufman ion gun. A wide range of deposition parameters were investigated, such as deposition pressure (0.3-900 mTorr N2), substrate temperature (50 and 600°C), and laser fluence (1-4 J/cm2) and laser repetition rate (1-10 Hz). The films have been characterized by Rutherford Backscattering Spectroscopy, thin-film X-ray diffraction, scanning electron microscopy, and micro-Raman spectroscopy. In general, the films were nitrogen deficient with a maximum nitrogen to carbon ratio (N/C) of 0.45 and a shift in the G band Raman peak consistent with amorphous CNx (a-CNx).


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