Enhanced stability of platinized silicon substrates using an unconventional adhesion layer deposited by CSD for high temperature dielectric thin film deposition

2007 ◽  
Vol 87 (4) ◽  
pp. 705-708 ◽  
Author(s):  
S. Halder ◽  
T. Schneller ◽  
R. Waser
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Adhesion Layer ◽  
Dielectric Thin Film ◽  
Enhanced Stability

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

Preparation of Boron-Rich Refractory Semiconductors

1987 ◽  
Vol 97 ◽  
Author(s):  
T. L. Aselage
Keyword(s):  
Thin Film ◽  
Crystal Growth ◽  
High Temperature ◽  
Room Temperature ◽  
Thin Film Deposition ◽  
Wide Bandgap ◽  
Film Deposition ◽  
Rhombohedral Structure ◽  
Type Semiconductor ◽  
Preparation Techniques

ABSTRACTBoron-rich refractory solids based on the rhombohedral structure of α-B exhibit electrical properties that range from a hopping-type semiconductor (boron carbide) to wide bandgap room temperature insulators (the boron pnictides B6P and B6As). As such, they are of interest for a variety of high temperature semiconductor applications. Preparation techniques for these unusual materials are reviewed, and new results on the crystal growth of boron carbides and B6As and on thin film deposition of B6P are presented.

Surface smoothing and roughening by dielectric thin film deposition

1988 ◽  
Vol 27 (8) ◽  
pp. 1393 ◽  
Author(s):  
Angela Duparré ◽  
Heinz-Günter Walther
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Surface Smoothing ◽  
Dielectric Thin Film

scholarly journals Coatings for FEL optics: preparation and characterization of B4C and Pt

2018 ◽  
Vol 25 (1) ◽  
pp. 116-122 ◽  
Author(s):  
Michael Störmer ◽  
Frank Siewert ◽  
Christian Horstmann ◽  
Jana Buchheim ◽  
Grzegorz Gwalt
Keyword(s):  
Thin Film ◽  
Layer Thickness ◽  
Single Layer ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Surface Finishing ◽  
Silicon Substrates ◽  
Shape Error ◽  
X Ray ◽  
Efficient Delivery

Large X-ray mirrors are required for beam transport at both present-day and future free-electron lasers (FELs) and synchrotron sources worldwide. The demand for large mirrors with lengths up to 1 m single layers consisting of light or heavy elements has increased during the last few decades. Accordingly, surface finishing technology is now able to produce large substrate lengths with micro-roughness on the sub-nanometer scale. At the Helmholtz-Zentrum Geesthacht (HZG), a 4.5 m-long sputtering facility enables us to deposit a desired single-layer material some tens of nanometers thick. For the European XFEL project, the shape error should be less than 2 nm over the whole 1 m X-ray mirror length to ensure the safe and efficient delivery of X-ray beams to the scientific instruments. The challenge is to achieve thin-film deposition on silicon substrates, benders and gratings without any change in mirror shape. Thin films of boron carbide and platinum with a thickness in the range 30–100 nm were manufactured using the HZG sputtering facility. This setup is able to cover areas of up to 1500 mm × 120 mm in one step using rectangular sputtering sources. The coatings produced were characterized using various thin-film methods. It was possible to improve the coating process to achieve a very high uniformity of the layer thickness. The movement of the substrate in front of the sputtering source has been optimized. A variation in B4C layer thickness below 1 nm (peak-to-valley) was achieved at a mean thickness of 51.8 nm over a deposition length of 1.5 m. In the case of Pt, reflectometry and micro-roughness measurements were performed. The uniformity in layer thickness was about 1 nm (peak-to-valley). The micro-roughness of the Pt layers showed no significant change in the coated state for layer thicknesses of 32 nm and 102 nm compared with the uncoated substrate state. The experimental results achieved will be discussed with regard to current restrictions and future developments.

Studies of Ir-Ta-O as High Temperature Stable Electrode Material and Its Application for Ferroelectric SrBi2Ta2O9 Thin Film Deposition

1999 ◽  
Vol 38 (Part 2, No. 12A) ◽  
pp. L1447-L1449 ◽  
Author(s):  
Fengyan Zhang ◽  
Jer-shen Maa ◽  
Sheng Teng Hsu ◽  
Shigeo Ohnishi ◽  
Wendong Zhen
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Electrode Material ◽  
Thin Film Deposition ◽  
Film Deposition

scholarly journals Transmissive nonlocal multilayer thin film optical filter for image differentiation

Nanophotonics ◽  
2021 ◽  
Vol 10 (13) ◽  
pp. 3519-3525
Author(s):  
Chunqi Jin ◽  
Yuanmu Yang
Keyword(s):  
Thin Film ◽  
Optical Filter ◽  
Optical Response ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Metallic Thin Films ◽  
Optical Components ◽  
Dielectric Thin Film ◽  
Nanophotonic Structures ◽  
Time Image

Abstract It is well-known that a Fourier optical system can be used to perform specific computing tasks, such as image differentiation, with a superior speed and power consumption in comparison with digital computers, despite bulky optical components that are often required. Recently, there has been a surge in the interest to design much more compact nanophotonic structures, such as dielectric and metallic thin films, photonic crystals, and metasurfaces with a tailored angle-dependent (nonlocal) optical response, to directly perform image differentiation without additional lenses for Fourier transformation. Here, we present a straightforward platform, a multilayer dielectric thin film optical filter, fabricated using mature wafer-scale thin film deposition technique, with an optimized nonlocal optical response, for isotropic image differentiation in transmission mode for arbitrary input polarization. The proposed thin film filter may be conveniently coated at various transparent surfaces and inserted in machine vision or microscopy systems for enhanced, real-time image processing.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

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