Growth and thermal annealing of amorphous germanium carbide obtained by X-ray chemical vapor deposition

2013 ◽  
Vol 48 (18) ◽  
pp. 6357-6366 ◽  
Author(s):  
C. Demaria ◽  
P. Benzi ◽  
A. Arrais ◽  
E. Bottizzo ◽  
P. Antoniotti ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Amorphous Germanium ◽  
X Ray ◽  
Germanium Carbide

Synthesis and characterization of tungsten oxide nanorods from chemical vapor deposition-grown tungsten film by low-temperature thermal annealing

2008 ◽  
Vol 23 (5) ◽  
pp. 1320-1326 ◽  
Author(s):  
Seongho Jeon ◽  
Kijung Yong
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Tungsten Oxide ◽  
Thermal Annealing ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Tem Analysis ◽  
X Ray ◽  
Oxide Nanorods

A simple thermal annealing was performed to prepare tungsten oxide nanorods directly from tungsten (W) film. The W film was deposited on Si(100) substrate by chemical vapor deposition (CVD) at 450 °C using W(CO)6. A high density of tungsten oxide nanorods was produced by heating of the W film at 600–700 °C. The morphology, structure, composition, and chemical binding states of the prepared nanorods were characterized by scanning electron microscopy (SEM), x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM) analysis. XRD and TEM results showed that the grown nanorods were single-crystalline W18O49. According to XPS analysis, the W18O49 nanorods contained ∼55.69% W6+, ∼32.28% W5+, and ∼12.03% W4+. The growth mechanism based on thermodynamics is discussed for the growth of tungsten oxide nanorods from W film.

Plasma Enhanced Chemical Vapor Deposition of Porous Organosilicate Glass ILD Films With k ≤ 2.4.

2003 ◽  
Vol 766 ◽  
Author(s):  
Raymond N. Vrtis ◽  
Mark L. O'Neill ◽  
Jean L. Vincent ◽  
Aaron S. Lukas ◽  
Brian K. Peterson ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Chemical Vapor Deposition ◽  
Mechanical Strength ◽  
Thermal Annealing ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organosilicate Glass

AbstractWe report on our work to develop a process for depositing nanoporous organosilicate (OSG) films via plasma enhanced chemical vapor deposition (PECVD). This approach entails codepositing an OSG material with a plasma polymerizable hydrocarbon, followed by thermal annealing of the material to remove the porogen, leaving an OSG matrix with nano-sized voids. The dielectric constant of the final film is controlled by varying the ratio of porogen precursor to OSG precursor in the delivery gas. Because of the need to maintain the mechanical strength of the final material, diethoxymethylsilane (DEMS) is utilized as the OSG precursor. Utilizing this route we are able to deposit films with a dielectric constant of 2.55 to 2.20 and hardness of 0.7 to 0.3 GPa, respectively.

Characterization ofa‐SiC:H films produced in a standard plasma enhanced chemical vapor deposition system for x‐ray mask application

1992 ◽  
Vol 72 (7) ◽  
pp. 3110-3115 ◽  
Author(s):  
A. Jean ◽  
M. Chaker ◽  
Y. Diawara ◽  
P. K. Leung ◽  
E. Gat ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray

A soft X-ray absorption study of nanodiamond films prepared by hot-filament chemical vapor deposition

2003 ◽  
Vol 372 (3-4) ◽  
pp. 320-324 ◽  
Author(s):  
Y.H Tang ◽  
X.T Zhou ◽  
Y.F Hu ◽  
C.S Lee ◽  
S.T Lee ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Absorption Study ◽  
X Ray ◽  
Hot Filament ◽  
X Ray Absorption

Silicon Recrystallization in Sipos Material Obtained by Disilane

1995 ◽  
Vol 403 ◽  
Author(s):  
J. J. Pedroviejo ◽  
B. Garrido ◽  
J. C. Ferrer ◽  
A. Cornet ◽  
E. Scheid ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Thermal Treatments ◽  
Structural Modifications ◽  
Pressure Chemical

AbstractConventional and Rapid Thermal Annealing of Semi-Insulating Polycrystalline Silicon layers obtained by Low Pressure Chemical Vapor Deposition (LPCVD) from disilane Si2H6 have been performed in order to determine the structural modifications induced on the layers by these thermal treatments. The study of these modifications has been carried out by several analysis methods like FTIR, XPS, TEM, RAMAN and ellipsometry. The results obtained are presented, contrasted and discussed in this work.

High Quality GaAs Mis Diodes With Very Low Surface State Density

1990 ◽  
Vol 209 ◽  
Author(s):  
Yoshihisa Fujisaki ◽  
Sumiko Sakai ◽  
Saburo Ataka ◽  
Kenji Shibata
Keyword(s):  
Chemical Vapor Deposition ◽  
Density Of States ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
State Density ◽  
High Quality ◽  
Metal Insulator ◽  
X Ray ◽  
Mis Devices

ABSTRACTHigh quality GaAs/SiO2 MIS( Metal Insulator Semiconductor ) diodes were fabricated using (NH4)2S treatment and photo-assisted CVD( Chemical Vapor Deposition ). The density of states at the GaAs and SiO2 interface is the order of 1011 cm-2eV-1 throughout the forbidden energy range, which is smaller by the order of two than that of the MIS devices made by the conventional CVD process. The mechanism attributable to the interface improvement was investigated through XPS( X-ray Photoelectron Spectroscopy ) analyses.

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