Inorganic perovskites improved film and crystal quality of CsPbIBr2 when doped with rubidium

Alexander W. Stewart ◽  
Amal Bouich ◽  
Bernabé Marí
2013 ◽  
Vol 740-742 ◽  
pp. 77-80
Jung Young Jung ◽  
Sang Il Lee ◽  
Mi Seon Park ◽  
Doe Hyung Lee ◽  
Hee Tae Lee ◽  

The present research was focused to investigate the effect of internal crucible design that influenced the 4H-SiC crystal growth onto a 6H-SiC seed by PVT method. The crucible design was modified to produce a uniform radial temperature gradient in the growth cell. The seed attachment was also modified with a use of polycrystalline SiC plate. The crystal quality of 4H-SiC single crystals grown in modified crucible and grown with modified seed attachment was revealed to be better than that of crystal grown in conventional crucible. The full width at half maximum (FWHM) values of grown SiC crystals in the conventional crucible, the modified seed attachment and the modified crucible were 285 arcsec, 134 arcsec and 128 arcsec, respectively. The micropipe density (MPD) of grown SiC crystals in the conventional crucible, the modified seed attachment and the modified crucible were 101ea/cm^2, 81ea/cm^2 and 42ea/cm^2, respectively.

2020 ◽  
Vol 20 (3) ◽  
pp. 1811-1819 ◽  
Dipankar Chugh ◽  
Sonachand Adhikari ◽  
Jennifer Wong-Leung ◽  
Mykhaylo Lysevych ◽  
Chennupati Jagadish ◽  

2004 ◽  
Vol 96 (8) ◽  
pp. 4166-4170 ◽  
Katsumi Takahiro ◽  
Kiyoshi Kawatsura ◽  
Shinji Nagata ◽  
Shunya Yamamoto ◽  
Hiroshi Naramoto

2005 ◽  
Vol 891 ◽  
Shin-ichiro Uekusa ◽  
Kunitoshi Aoki ◽  
Mohammad Zakir Hossain ◽  
Tomohiro Fukuda ◽  
Noboru Miura

ABSTRACTWe prepared β-FeSi2 thin-films by using a Pulsed Laser Deposition (PLD) method and succeeded to observe photoluminescence (PL) around 1.5 μm corresponding to β-FeSi2 band from the long-time and high-temperature annealed β-FeSi2 thin-films. The β-FeSi2 thin-films were ablated on Si(111) substrates heated at 550°C. After ablation, long-time and high-temperature thermal annealing was performed in order to improve the crystal-quality. Annealing times were 5, 10, 20 and 40 hrs, and annealing temperature was kept at 900 °C. Crystallinity was evaluated by an X-ray diffraction (XRD) measurement. We have observed eminent improvement on crystal-quality of β-FeSi2 thin-films. Annealed samples show (220) or (202) X-ray diffraction signals of β-FeSi2 and the full width at half maximum (FWHM) of these peaks were 0.27° although the thickness of the samples decreased with annealing time. Thermal-diffusion of Si atoms was observed from substrate to thin-films. Fe atoms in the ablated thin-films also diffused into the substrate. The relationship between the thickness of β-FeSi2 thin-films and the thermal-diffusion were investigated with rutherford backscattering (RBS) measurement. Maximum photoluminescence intensity around 1.5 μm was observed from the thickest β-FeSi2 thin-film with only 5 hrs annealing.

2001 ◽  
Vol 69 (1-3) ◽  
pp. 30-35 ◽  
Sungun Nam ◽  
Young-Moon Yu ◽  
Jongkwang Rhee ◽  
Byungsung O ◽  
Yong Dae Choi ◽  

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