Studies of structural, dielectric and electrical characteristics of nickel-modified barium titanate for device applications

2022 ◽  
Author(s):  
C. Behera ◽  
P. Patel ◽  
N. Pradhan ◽  
R. N. P. Choudhary
Keyword(s):  
Barium Titanate ◽  
Electrical Characteristics ◽  
Device Applications

Reactive Ion Etching of GaSb, (Ai,Ga)Sb, and InAs for Novel Device Applications.

1990 ◽  
Vol 216 ◽  
Author(s):  
D.C. La Tulipe ◽  
D.J. Frank ◽  
H. Munekata
Keyword(s):  
Etch Rate ◽  
Reactive Ion Etching ◽  
Scanning Electron Micrographs ◽  
Electrical Characteristics ◽  
Ion Etching ◽  
Novel Device ◽  
Physical Sputtering ◽  
Chlorine Gas ◽  
Device Applications ◽  
Scanning Electron

ABSTRACT-Although a variety of novel device proposals for GaSb/(Al,Ga)Sb/InAs heterostructures have been made, relatively little is known about processing these materials. We have studied the reactive ion etching characteristics of GaSb, (AI,Ga)Sb, and InAs in both methane/ hydrogen and chlorine gas chemistries. At conditions similar to those reported elsewhere for RIE of InP and GaAs in CH4/H2, the etch rate of (AI,Ga)Sb was found to be near zero, while GaSb and InAs etched at 200Å/minute. Under conditions where the etch mechanism is primarily physical sputtering, the three compounds etch at similar rates. Etching in Cl2 was found to yield anisotropic profiles, with the etch rate of (AI,Ga)Sb increasing with Al mole fraction, while InAs remains unetched. Damage to an InAs “stop layer” was investigated by sheet resistance and mobility measurements. These etching techniques were used to fabricate a novel InAs-channel FET composed of these materials. Several scanning electron micrographs of etching results are shown along with preliminary electrical characteristics.

Materials and electrical characteristics of carbon-doped Ga0.47In0.53As using carbontetrabromide by MOMBE for HBT device applications

1996 ◽  
Vol 164 (1-4) ◽  
pp. 362-370 ◽  
Author(s):  
R.A. Hamm ◽  
S. Chandrasekhar ◽  
L. Lunardi ◽  
M. Geva ◽  
R. Malik ◽  
...  
Keyword(s):  
Electrical Characteristics ◽  
Carbon Doped ◽  
Device Applications

Electrical Characteristics of ZnTe Thermoelectric Thin Films

2014 ◽  
Vol 535 ◽  
pp. 688-691 ◽  
Author(s):  
Wen Shiush Chen ◽  
Cheng Hsing Hsu ◽  
Wen Hua Kao ◽  
Yi Ting Yu ◽  
Pai Chuan Yang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Annealing Temperature ◽  
Thermoelectric Device ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Device Applications ◽  
Thermoelectric Thin Films ◽  
Thermal Coating

Thermal coating growth of ZnTe thermoelectric films were deposited on n-type Si substrate is studied. Structural analysis through x-ray diffraction (XRD) and scanning electron microscopy (SEM) were sensitive to the RTA treatment. The electrical properties and microstructure of these films were investigated with special emphasis on the effects of various annealing temperatures from 600°C to 800°C by RTA technique. The highest carrier concentration, lowest resistivity and mobility at an annealing temperature of 700°C are 3.5×1015cm-3, 0.25 Ω-cm, and 49 cm2V-1S-1. The resultant electrical properties have made ZnTe films as very interesting materials for thermoelectric device applications.

scholarly journals Synthesis and Characteristics of Carbon Nanotube Using Plasma Arc Discharge

2018 ◽  
Vol 17 (3) ◽  
pp. 20-22
Author(s):  
Suhana Mohamed Sultan ◽  
Nurul Syazwani Azahurin ◽  
Azam Mohamad
Keyword(s):  
Carbon Nanoparticles ◽  
Arc Discharge ◽  
Low Cost ◽  
Average Diameter ◽  
Plasma Discharge ◽  
Arc Plasma ◽  
Electrical Characteristics ◽  
Sem Image ◽  
Plasma Arc Discharge ◽  
Device Applications

Carbon nanoparticles (CNP) were synthesized in arc plasma discharge using a simple, low-cost and toxic-free precursor gas. The structural and electrical characteristics were examined. The diameter and the height of the grown CNP was 28.5 μm and  316.7 μm , respectively. SEM image showed existence of a high density and uniform nanostructures within the cylindrical bulk CNP tube. The average diameter of the nanoparticles is 600 nm. The electrical characteristics revealed  low resistance with R = 7.23 mΩ with Cu electrodes.  In addition, the device exhibited a   high conductivity of 6.8 x 105 Scm-1. These results indicate the potential of CNP material for power device applications.

High quality barium titanate nanofibers for flexible piezoelectric device applications

2015 ◽  
Vol 233 ◽  
pp. 195-201 ◽  
Author(s):  
Feifei Wang ◽  
Yiu-Wing Mai ◽  
Danyang Wang ◽  
Rui Ding ◽  
Wangzhou Shi
Keyword(s):  
Barium Titanate ◽  
High Quality ◽  
Piezoelectric Device ◽  
Device Applications

scholarly journals The Effect of Temperature on the Electrical Characteristics of Nanofluids Based on Palm Oil

2021 ◽  
Vol 53 (3) ◽  
pp. 210312
Author(s):  
Pichai Muangpratoom
Keyword(s):  
Zinc Oxide ◽  
Titanium Dioxide ◽  
Barium Titanate ◽  
Palm Oil ◽  
Test Sample ◽  
Effect Of Temperature ◽  
Electrical Characteristics ◽  
Magnetic Stirrer ◽  
Voltage Breakdown

This study sought to apply nanotechnology to develop the electrical characteristics of palm oil. Experiments were conducted using three types of nanoparticles: zinc oxide (ZnO), titanium dioxide (TiO2), and barium titanate (BaTiO3). The nanofluid samples were prepared by mixing the nanoparticles with palm oil using various processes. In the first scenario, a combination of palm oil with nanoparticles at 0.01 vol% was created, while the next sample had 0.03 vol% of nanoparticles. The samples were then fully dispersed using a magnetic stirrer, followed by ultrasonic dispersal in order to ensure homogeneity of the nanofluid. The electrodes were set 2.5 mm apart and the test was performed six times on each test sample in compliance with the IEC 60156 standard. The voltage breakdown characteristics were recorded for each of the liquids at temperatures varying from 35 °C to 90 °C. The results showed that for the palm oil samples containing nanoparticles, the voltage breakdown was greater than for the samples containing unmodified palm oil.

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