On Minimum Static Breakdown Voltage for a Gasfilled Gap

2022 ◽  
Author(s):  
A. V. Kozyrev ◽  
V. Yu. Kozhevnikov ◽  
A. O. Kokovin ◽  
S. Yu. Medvedev
Keyword(s):  
Breakdown Voltage

Characteristics of Negative Lightning Impulse Breakdown Voltage in Pure Water

2018 ◽  
Vol 138 (8) ◽  
pp. 441-448 ◽  
Author(s):  
Norimitsu Takamura ◽  
Nobutaka Araoka ◽  
Seiya Kamohara ◽  
Yuta Hino ◽  
Takuya Beppu ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Pure Water ◽  
Lightning Impulse

Fundamental Considerations for CDM Failure in 90nm Products

2006 ◽  
Author(s):  
Nobuyuki Wakai ◽  
Yuji Kobira ◽  
Hidemitsu Egawa ◽  
Masayoshi Tsutsumi
Keyword(s):  
Breakdown Voltage ◽  
High Speed ◽  
Gate Oxide ◽  
Critical Parameters ◽  
Protection Device ◽  
Oxide Breakdown ◽  
Technology Products ◽  
Charged Device ◽  
Device Size ◽  
Fundamental Consideration

Abstract Fundamental consideration for CDM (Charged Device Model) breakdown was investigated with 90nm technology products and others. According to the result of failure analysis, it was found that gate oxide breakdown was critical failure mode for CDM test. High speed triggered protection device such as ggNMOS and SCR (Thyristor) is effective method to improve its CDM breakdown voltage and an improvement for evaluated products were confirmed. Technological progress which is consisted of down-scaling of protection device size and huge number of IC pins of high function package makes technology vulnerable and causes significant CDM stress. Therefore, it is expected that CDM protection designing tends to become quite difficult. In order to solve these problems in the product, fundamental evaluations were performed. Those are a measurement of discharge parameter and stress time dependence of CDM breakdown voltage. Peak intensity and rise time of discharge current as critical parameters are well correlated their package capacitance. Increasing stress time causes breakdown voltage decreasing. This mechanism is similar to that of TDDB for gate oxide breakdown. Results from experiences and considerations for future CDM reliable designing are explained in this report.

Increased breakdown voltage of silicon-on-insulator Schottky diodes

1993 ◽  
Vol 29 (15) ◽  
pp. 1381 ◽  
Author(s):  
B.R. Kang ◽  
S.N. Yoon ◽  
Y.H. Cho ◽  
S.I. Cha ◽  
Y.I. Choi
Keyword(s):  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Silicon On Insulator

scholarly journals Implementation of a 900 V Switching Circuit for High Breakdown Voltage β-Ga2O3 Schottky Diodes

2019 ◽  
Vol 8 (7) ◽  
pp. Q3229-Q3234 ◽  
Author(s):  
Yen-Ting Chen ◽  
Jiancheng Yang ◽  
Fan Ren ◽  
Chin-Wei Chang ◽  
Jenshan Lin ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Switching Circuit ◽  
High Breakdown Voltage

High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Breakdown Voltage ◽  
Oxygen Plasma ◽  
Cutoff Frequency ◽  
Chemical Vapor ◽  
Current Gain ◽  
Organic Chemical ◽  
Oxygen Plasma Treatment ◽  
Gan Hemt ◽  
High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

scholarly journals Noise and Breakdown Characterization of SPAD Detectors with Time-Gated Photon-Counting Operation

Sensors ◽  
2021 ◽  
Vol 21 (16) ◽  
pp. 5287
Author(s):  
Hiwa Mahmoudi ◽  
Michael Hofbauer ◽  
Bernhard Goll ◽  
Horst Zimmermann
Keyword(s):  
Breakdown Voltage ◽  
Single Photon ◽  
Photon Counting ◽  
Low Noise ◽  
Dark Count ◽  
Fully Integrated ◽  
Trade Offs ◽  
And Performance ◽  
Noise Models

Being ready-to-detect over a certain portion of time makes the time-gated single-photon avalanche diode (SPAD) an attractive candidate for low-noise photon-counting applications. A careful SPAD noise and performance characterization, however, is critical to avoid time-consuming experimental optimization and redesign iterations for such applications. Here, we present an extensive empirical study of the breakdown voltage, as well as the dark-count and afterpulsing noise mechanisms for a fully integrated time-gated SPAD detector in 0.35-μm CMOS based on experimental data acquired in a dark condition. An “effective” SPAD breakdown voltage is introduced to enable efficient characterization and modeling of the dark-count and afterpulsing probabilities with respect to the excess bias voltage and the gating duration time. The presented breakdown and noise models will allow for accurate modeling and optimization of SPAD-based detector designs, where the SPAD noise can impose severe trade-offs with speed and sensitivity as is shown via an example.

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