Polarization-Engineered p-Type Electron-Blocking-Layer-Free III-Nitride Deep-Ultraviolet Light-Emitting Diodes for Enhanced Carrier Transport

2022 ◽  
Author(s):  
Ravi Teja Velpula ◽  
Barsha Jain ◽  
Trupti Ranjan Lenka ◽  
Renjie Wang ◽  
Hieu Pham Trung Nguyen
Keyword(s):  
Ultraviolet Light ◽  
Carrier Transport ◽  
Light Emitting Diodes ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
P Type ◽  
Ultraviolet Light Emitting Diodes

Effects of quantum barriers and electron-blocking layer in deep-ultraviolet light-emitting diodes

2018 ◽  
Vol 51 (7) ◽  
pp. 075106 ◽  
Author(s):  
Jih-Yuan Chang ◽  
Man-Fang Huang ◽  
Fang-Ming Chen ◽  
Bo-Ting Liou ◽  
Ya-Hsuan Shih ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Light Emitting Diodes ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Deep Ultraviolet ◽  
Ultraviolet Light Emitting Diodes

Efficient carrier transport for 368 nm ultraviolet LEDs with p-AlInGaN/AlGaN short-period superlattice electron blocking layer

2021 ◽  
Author(s):  
Longfei He ◽  
Kang Zhang ◽  
Hualong Wu ◽  
Chenguang He ◽  
Wei Zhao ◽  
...  
Keyword(s):  
Ultraviolet Light ◽  
Carrier Transport ◽  
Hole Injection ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting ◽  
Near Ultraviolet ◽  
Short Period ◽  
P Type ◽  
Ultraviolet Light Emitting Diodes

It is generally known that the p-type AlGaN electron-blocking layer (EBL) can hinder hole injection for near-ultraviolet light-emitting diodes (NUV-LEDs). Moreover, at the last quantum barrier (LQB)/EBL interface, the polarization-induced...

Sign in / Sign up

Export Citation Format

Share Document