Enhancement of charge breeding efficiency for rare isotope beam with the control of magnetic field profile and electron beam energy in EBIS

2020 ◽  
Vol 14 (4) ◽  
pp. 315-321
Author(s):  
J. W. Kim
2018 ◽  
Vol 44 (10) ◽  
pp. 949-952 ◽  
Author(s):  
A. V. Gromov ◽  
M. B. Goykhman ◽  
N. F. Kovalev ◽  
A. V. Palitsin ◽  
M. I. Fuks ◽  
...  

1998 ◽  
Vol 5 (3) ◽  
pp. 437-439 ◽  
Author(s):  
S. Sugiyama ◽  
H. Ohgaki ◽  
K. Yamada ◽  
T. Mikado ◽  
M. Koike ◽  
...  

A superconducting wiggler has been successfully installed at the ETL 800 MeV electron storage ring facility (TERAS). The operation of the wiggler at magnetic field strengths of 5 T with electron beam energy of 750 MeV has been accomplished. The wiggler has been designed and constructed to produce synchrotron radiation with critical photon energy around 3 keV for scientific, industrial and medical applications. We report here experiments that demonstrate the possibility of stable operation of a superconducting wiggler in a small storage ring.


1979 ◽  
Vol 40 (C7) ◽  
pp. C7-777-C7-778
Author(s):  
G. Fournier ◽  
J. Bonnet ◽  
J. Bridet ◽  
J. Fort ◽  
D. Pigache

2020 ◽  
Vol 62 (5) ◽  
pp. 055004 ◽  
Author(s):  
Guangyu Li ◽  
Quratul Ain ◽  
Song Li ◽  
Muhammad Saeed ◽  
Daniel Papp ◽  
...  

1992 ◽  
Vol 258 ◽  
Author(s):  
F.S. Pool ◽  
J.M. Essick ◽  
Y.H. Shing ◽  
R.T. Mather

ABSTRACTThe magnetic field profile of an electron cyclotron resonance (ECR) microwave plasma was systematically altered to determine subsequent effects on a-Si:H film quality. Films of a-Si:H were deposited at pressures of 0.7 mTorr and 5 mTorr with a H2/SiH4 ratio of approximately three. The mobility gap density of states ND, deposition rate and light to dark conductivity were determined for the a-Si:H films. This data was correlated to the magnetic field profile of the plasma, which was characterized by Langmuir probe measurements of the ion current density. By variation of the magnetic field profile ND could be altered by more than an order of magnitude, from 1×1016 to 1×1017 at 0.7 mTorr and 1×1016 to 5×1017 at 5 mTorr. Two deposition regimes were found to occur for the conditions of this study. Highly divergent magnetic fields resulted in poor quality a-Si:H, while for magnetic field profiles defining a more highly confined plasma, the a-Si:H was of device quality and relatively independent of the magnetic field configuration.


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