Design and applications of metal oxide silicon array integrated circuits (Mosaics's) to data handling systems

1969 ◽  
Vol 8 (3) ◽  
pp. 257
Keyword(s):  
Integrated Circuits ◽  
Metal Oxide ◽  
Data Handling ◽  
Metal Oxide Silicon

Complementary metal oxide silicon integrated circuits incorporating monolithically integrated stretchable wavy interconnects

2008 ◽  
Vol 93 (4) ◽  
pp. 044102 ◽  
Author(s):  
Dae-Hyeong Kim ◽  
Won Mook Choi ◽  
Jong-Hyun Ahn ◽  
Hoon-Sik Kim ◽  
Jizhou Song ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Metal Oxide ◽  
Monolithically Integrated ◽  
Silicon Integrated Circuits ◽  
Metal Oxide Silicon

Suppression of Timing Variations due to Random Dopant Fluctuation by Back-Gate Bias in a Nanometer CMOS Inverter

2020 ◽  
Vol 13 ◽  
Author(s):  
Kai Zhang ◽  
Weifeng Lü ◽  
Peng Si ◽  
Zhifeng Zhao ◽  
Tianyu Yu
Keyword(s):  
Monte Carlo ◽  
Integrated Circuits ◽  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Gate Bias ◽  
Cmos Inverter ◽  
Back Gate ◽  
Random Dopant Fluctuation ◽  
Random Dopant

Background: In state-of-the-art nanometer metal-oxide-semiconductor-field-effect- transistors (MOSFETs), optimization of timing characteristic is one of the major concerns in the design of modern digital integrated circuits. Objective: This study proposes an effective back-gate-biasing technique to comprehensively investigate the timing and its variation due to random dopant fluctuation (RDF) employing Monte Carlo methodology. Methods: To analyze RDF-induced timing variation in a 22-nm complementary metal-oxide semiconductor (CMOS) inverter, an ensemble of 1000 different samples of channel-doping for negative metal-oxide semiconductor (NMOS) and positive metal-oxide semiconductor (PMOS) was reproduced and the input/output curves were measured. Since back-gate bias is technology dependent, we present in parallel results with and without VBG. Results: It is found that the suppression of RDF-induced timing variations can be achieved by appropriately adopting back-gate voltage (VBG) through measurements and detailed Monte Carlo simulations. Consequently, the timing parameters and their variations are reduced and, moreover, that they are also insensitive to channel doping with back-gate bias. Conclusion: Circuit designers can appropriately use back-gate bias to minimize timing variations and improve the performance of CMOS integrated circuits.

Tunnel DCIV diagnosis of ultrathin gate oxide metal-oxide-silicon transistors

2004 ◽  
Vol 19 (7) ◽  
pp. 870-876 ◽  
Author(s):  
Bin B Jie ◽  
K F Lo ◽  
Elgin Quek ◽  
Sanford Chu ◽  
Chih-Tang Sah
Keyword(s):  
Metal Oxide ◽  
Gate Oxide ◽  
Silicon Transistors ◽  
Metal Oxide Silicon

scholarly journals Synthesis and Characterization of Mixed Metal Oxide Nanocomposite Energetic Materials

2003 ◽  
Vol 800 ◽  
Author(s):  
Brady J. Clapsaddle ◽  
Lihua Zhao ◽  
Alex E. Gash ◽  
Joe H. Satcher ◽  
Kenneth J. Shea ◽  
...  
Keyword(s):  
Mass Transport ◽  
Metal Oxide ◽  
Energetic Materials ◽  
Silicon Oxide ◽  
Sol Gel ◽  
Synthesis And Characterization ◽  
Mixed Metal Oxide ◽  
Organic Additives ◽  
Metal Oxide Silicon

ABSTRACTIn the field of composite energetic materials, properties such as ingredient distribution, particle size, and morphology, affect both sensitivity and performance. Since the reaction kinetics of composite energetic materials are typically controlled by the mass transport rates between reactants, one would anticipate new and potentially exceptional performance from energetic nanocomposites. We have developed a new method of making nanostructured energetic materials, specifically explosives, propellants, and pyrotechnics, using sol-gel chemistry. A novel sol-gel approach has proven successful in preparing metal oxide/silicon oxide nanocomposites in which the metal oxide is the major component. Two of the metal oxides are tungsten trioxide and iron(III) oxide, both of which are of interest in the field of energetic materials. Furthermore, due to the large availability of organically functionalized silanes, the silicon oxide phase can be used as a unique way of introducing organic additives into the bulk metal oxide materials. As a result, the desired organic functionality is well dispersed throughout the composite material on the nanoscale. By introducing a fuel metal into the metal oxide/silicon oxide matrix, energetic materials based on thermite reactions can be fabricated. The resulting nanoscale distribution of all the ingredients displays energetic properties not seen in its microscale counterparts due to the expected increase of mass transport rates between the reactants. The synthesis and characterization of these metal oxide/silicon oxide nanocomposites and their performance as energetic materials will be discussed.

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