Electrical resistivity by lattice vacancies in multivalent non-transition metals

1962 ◽  
Vol 2 (6) ◽  
pp. 268-270 ◽  
Author(s):  
C. Reale
1975 ◽  
Vol 39 (2) ◽  
pp. 344-351 ◽  
Author(s):  
Jiro Yamashita ◽  
Shinya Wakoh ◽  
Setsuro Asano

1968 ◽  
Vol 46 (18) ◽  
pp. 2065-2071 ◽  
Author(s):  
C. T. Haywood ◽  
L. Verdini

The resistivity of palladium and palladium–hydrogen alloys has been studied in the temperature range 2–300 °K. At low temperatures (10 °K < T < 60 °K), it is found that ρ1 is proportional to Tn with n = 3.1 for pure palladium; but n decreases to 2.3 for an alloy with H/Pd = 0.25. For high concentrations and at low temperatures, the resistivity is found to be dependent upon the time and rate of cooling through the [Formula: see text] transformation. The residual resistivity is lower for faster cooling rates.The increase in resistivity due to 1 at. % hydrogen in palladium is calculated and found to be of the same order of magnitude as that for interstitials in other f.c.c. metals, but less then that found for hydrogen in the b.c.c. transition metals tantalum and niobium at room temperature.


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