T-gate and airbridge fabrication for MMICs by combining multi-voltage electron-beam lithography and ion-beam lithography

1992 ◽  
Vol 17 (1-4) ◽  
pp. 563-566 ◽  
Author(s):  
R.G. Woodham ◽  
R.M. Jones ◽  
D.G. Hasko ◽  
J.R.A. Cleaver ◽  
H. Ahmed
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Ion Beam ◽  
Ion Beam Lithography ◽  
Voltage Electron

High Resolution Resists for Next Generation Lithography: The Nanocomposite Approach

2000 ◽  
Vol 636 ◽  
Author(s):  
Kenneth E. Gonsalves ◽  
Hengpeng Wu ◽  
Yongqi Hu ◽  
Lhadi Merhari
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Electron Beam Lithography ◽  
Ion Beam ◽  
Proximity Effects ◽  
Next Generation ◽  
Polyhedral Oligosilsesquioxane ◽  
Ion Beam Lithography ◽  
New Class ◽  
Next Generation Lithography

AbstractThe SIA roadmap predicts mass production of sub-100 nm resolution circuits by 2006. This not only imposes major constraints on next generation lithographic tools but also requires that new resists capable of accommodating such a high resolution be synthesized and developed concurrently. Except for ion beam lithography, DUV, X-ray, and in particular electron beam lithography suffer significantly from proximity effects, leading to severe degradation of resolution in classical resists. We report a new class of resists based on organic/inorganic nanocomposites having a structure that reduces the proximity effects. Synthetic routes are described for a ZEP520®nano-SiO2 resist where 47nm wide lines have been written with a 40 nm diameter, 20 keV electron beam at no sensitivity cost. Other resist systems based on polyhedral oligosilsesquioxane copolymerized with MMA, TBMA, MMA and a proprietary PAG are also presented. These nanocomposite resists suitable for DUV and electron beam lithography show enhancement in both contrast and RIE resistance in oxygen. Tentative mechanisms responsible for proximity effect reduction are also discussed.

Recent Progress in Nano-electronic Devices Based on EBL and IBL

2020 ◽  
Vol 16 (2) ◽  
pp. 157-169
Author(s):  
Yusheng Pan ◽  
Ke Xu
Keyword(s):  
Electron Beam ◽  
Electronic Properties ◽  
Electron Beam Lithography ◽  
Recent Progress ◽  
Ion Beam ◽  
Electronic Devices ◽  
Ion Beam Lithography ◽  
Similarities And Differences

Electron beam lithography (EBL) and ion beam lithography (IBL) are extremely promising nanofabrication techniques for building nano-electronic devices due to their outstanding physical and electronic properties. In this review, an overview of EBL and IBL and a comparison of nanoelectronics fabricated based on four types of materials, namely graphene, ZnO, TiO2 and Ge, are presented. In each type of material, numerous practical examples are also provided in the illustration. Later, the strengths and weaknesses of EBL and IBL are presented in details. Finally, the similarities and differences between the two techniques are discussed and concluded.

Low voltage electron beam lithography in self‐assembled ultrathin films with the scanning tunneling microscope

1994 ◽  
Vol 64 (3) ◽  
pp. 390-392 ◽  
Author(s):  
C. R. K. Marrian ◽  
F. K. Perkins ◽  
S. L. Brandow ◽  
T. S. Koloski ◽  
E. A. Dobisz ◽  
...  
Keyword(s):  
Electron Beam ◽  
Ultrathin Films ◽  
Electron Beam Lithography ◽  
Scanning Tunneling Microscope ◽  
Low Voltage ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Voltage Electron ◽  
Self Assembled

scholarly journals Comparative study of plasmonic antennas fabricated by electron beam and focused ion beam lithography

2018 ◽  
Vol 8 (1) ◽  
Author(s):  
Michal Horák ◽  
Kristýna Bukvišová ◽  
Vojtěch Švarc ◽  
Jiří Jaskowiec ◽  
Vlastimil Křápek ◽  
...  
Keyword(s):  
Electron Beam ◽  
Comparative Study ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Lithography

Optical Properties of InGaAs/InP Quantum Wires Defined by High Voltage Electron Beam Lithography at 200 kV

1992 ◽  
Vol 283 ◽  
Author(s):  
P. Ils ◽  
M. Michel ◽  
A. Forchel ◽  
I. Gyuro ◽  
P. Speier ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Quantum Wires ◽  
Optical Emission ◽  
Blue Shift ◽  
Ingaas Layer ◽  
Lithography Process ◽  
Voltage Electron ◽  
Side Walls ◽  
Wet Chemical

ABSTRACTWe have fabricated and analyzed high quality InGaAs/InP quantum wires by electron beam lithography and wet chemical etching. In order to optimize the shape of the wet-etched wires different wire orientations were investigated. As results of the lithography process we obtain wire masks with widths down to 15 nm and etched wires with widths of the InGaAs layer of 18 nm.The wires were studied optically by means of photoluminescence spectroscopy. In contrast to dry etched wire structures the wet chemically etched wires show strong optical emission even for geometrical widths less than 25 nm. The weak decrease of the quantum efficiency with decreasing wire width indicates that there are no dead layers at the side walls of the wires, which is in contrast to previous studies on dry-etched structures. The photoluminescence energy of the InGaAs/InP wires is independent of the wire dimension down to widths of 50 nm. This indicates that a steep lateral potential in our structures is obtained due to the confinement by the semiconductor/vacuum transition at the etched surfaces. For wires with smaller widths an increasing blue shift of photoluminescence energy up to more than 30 meV is observed.

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