Valence band offset and interface formation of Ge/ZnSe(100) studied by synchrotron radiation photoemission

1996 ◽  
Vol 80 ◽  
pp. 193-196 ◽  
Author(s):  
Yang Fengyuan ◽  
Ban Dayan ◽  
Fang Rongchuan ◽  
Xu Shihong ◽  
Xu Pengshou ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Valence Band ◽  
Band Offset ◽  
Interface Formation ◽  
Valence Band Offset ◽  
Synchrotron Radiation Photoemission

In-Situ Studies of Semimagnetic Heterojunction Parameters

1989 ◽  
Vol 161 ◽  
Author(s):  
Xiaohua Yu ◽  
N. Troullier ◽  
A. Raisanen ◽  
G. Haugstad ◽  
A. Franciosi
Keyword(s):  
High Resolution ◽  
Synchrotron Radiation ◽  
Band Offset ◽  
Experimental Uncertainty ◽  
Valence Band Offset ◽  
Transitivity Rule ◽  
The Common ◽  
Synchrotron Radiation Photoemission ◽  
Common Anion

ABSTRACTWe have conducted a systematic study of Ge-Cd1−xMnxTe heterostructures prepared in situ by deposition of polycrystalline Ge onto atomically clean Cd1−xMnx (110) surfaces. We examined by means of high resolution synchrotron radiation photoemission the valence band offset δEv as a function of the substrate composition x (x=0, 0.35, and 0.60) and bandgap Eg (Eg = 1.47, 1.93, and 2.13 eV). We find δEv=0.84±0.10eV in all cases, and no dependence of δEv on the substrate bandgap within experimental uncertainty. This finding indicates that within the range of validity of the transitivity rule, Cd1−xMnx-Cd1−yMny heterojunctions may actually follow the common anion rule.

Photoemission Studies of Amorphous Silicon/Germanium Heterojunctions

1985 ◽  
Vol 49 ◽  
Author(s):  
F. Evangelisti ◽  
S. Modesti ◽  
F. Boscherini ◽  
P. Fiorini ◽  
C. Quaresima ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Amorphous Silicon ◽  
Valence Band ◽  
Silicon Germanium ◽  
Interface Formation ◽  
Band Bending ◽  
Amorphous Silicon Germanium ◽  
Synchrotron Radiation Photoemission ◽  
Valence Band Discontinuity

AbstractThe heterostructures obtained by growing a-Ge on a-Si:H and a-Si have been investigated by synchrotron radiation photoemission. We measured valence band and core level spectra on the heterostructures grown in situ under ultrahigh-vacuum conditions. A step-by-step monitoring of possible band-bending changes during the interface formation enabled us to determine unambiguously the band discontinuities. The measured values of the valence band discontinuity were 0.2 ± 0.1 eV for a-Si:H/a-Ge and 0.0 ± 0.1 eV for a-Si/a-Ge, respectively. Evidence was found for the formation of abrupt interfaces without interdiffusion.

Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy

1992 ◽  
Vol 46 (3) ◽  
pp. 1886-1888 ◽  
Author(s):  
Gérald Arnaud ◽  
Philippe Boring ◽  
Bernard Gil ◽  
Jean-Charles Garcia ◽  
Jean-Pierre Landesman ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset ◽  
Photoreflectance Spectroscopy

X-ray photoelectron spectroscopy measurement of n-ZnO/p-NiO heterostructure valence-band offset

2009 ◽  
Vol 94 (2) ◽  
pp. 022108 ◽  
Author(s):  
R. Deng ◽  
B. Yao ◽  
Y. F. Li ◽  
Y. M. Zhao ◽  
B. H. Li ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray ◽  
Spectroscopy Measurement

scholarly journals Valence band offset of InN∕AlN heterojunctions measured by x-ray photoelectron spectroscopy

2007 ◽  
Vol 90 (13) ◽  
pp. 132105 ◽  
Author(s):  
P. D. C. King ◽  
T. D. Veal ◽  
P. H. Jefferson ◽  
C. F. McConville ◽  
T. Wang ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Band Offset ◽  
Valence Band Offset ◽  
X Ray
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