Metal-induced crystallization of hydrogenated amorphous Si films

Physica B+C ◽  
1983 ◽  
Vol 117-118 ◽  
pp. 953-955 ◽  
Author(s):  
C.C. Tsai ◽  
R.J. Nemanich ◽  
M.J. Thompson ◽  
B.L. Stafford
Keyword(s):  
Metal Induced Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Hydrogenated Amorphous ◽  
Induced Crystallization

Optically Assisted Metal-Induced Crystallization of Thin Si Films for Low-Cost Solar Cells

2001 ◽  
Vol 685 ◽  
Author(s):  
Wei Chen ◽  
Bhushan Sopori ◽  
Kim Jones ◽  
Robert Reedy ◽  
N. M. Ravindra ◽  
...  
Keyword(s):  
Grain Orientation ◽  
Deposition Temperature ◽  
Crystallization Front ◽  
Low Cost ◽  
Metal Induced Crystallization ◽  
Glass Substrates ◽  
Amorphous Si ◽  
Si Films ◽  
Induced Crystallization

AbstractOptically assisted, metal induced crystallization (MIC) was used to convert amorphous Si films, deposited on Al coated glass substrates, into polycrystalline Si (pc-Si). The study investigated the effects of deposition temperature, process temperature, and film thickness on the grain orientation, grain size, and crystallization front of the processed films. Furthermore, we have attempted to examine the role of Al in MIC – in particular, whether the metal can be confined to the interface while grain enhancement occurs.

Directed Crystallization of Amorphous Silicon Deposits on Glass Substrates

2007 ◽  
Vol 26-28 ◽  
pp. 623-628 ◽  
Author(s):  
Dong Nyung Lee
Keyword(s):  
Annealing Temperature ◽  
Chemical Vapor ◽  
Film Plane ◽  
Directed Crystallization ◽  
Random Orientation ◽  
Metal Induced Crystallization ◽  
Glass Substrates ◽  
Amorphous Si ◽  
Si Films ◽  
Induced Crystallization

Amorphous Si films are generally deposited on glass by physical or chemical vapor deposition. When annealed, they undergo crystallization through nucleation and grain growth. At low annealing temperatures, crystallization starts near the glass substrates for pure Si films and near metals for metal-induced crystallization. In this case, crystallites grow along the <111> directions of c-Si nearly parallel to the film plane, that is, the directed crystallization. The directed crystallization is likely to develop the <110> or <111> orientation, which means the <110> or <111> directions are along the film thickness direction. As the annealing temperature increases, equiaxed crystallization tends to increase, which in turn increases random orientation. When the annealing temperature is further increased, the <111> orientation may be obtained.

Solution-Based Metal Induced Crystallization of Amorphous Silicon Films

2013 ◽  
Vol 652-654 ◽  
pp. 1765-1768
Author(s):  
Xiao Lei Qu ◽  
Jing Jin ◽  
Wei Min Shi ◽  
Yu Feng Qiu ◽  
Lu Huang ◽  
...  
Keyword(s):  
Grain Size ◽  
High Temperature ◽  
Amorphous Silicon ◽  
Spin Coating ◽  
Annealing Process ◽  
Crystalline Fraction ◽  
Metal Induced Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Induced Crystallization

A viscous Nickel (Ni) solution was applied on amorphous Si films by spin coating and its effect on the crystallization of amorphous Si films was investigated with a two-step annealing process. The experimental results show that with the help of the two-step annealing, the crystallization of the film can take place at 500oC. At the same time, the crystalline fraction gets up to 79.4% after annealing at a high temperature of 520oC and the grain size of the polycrystalline Si films is approximately 200 nm.

High temperature metal-induced crystallization of r.f. sputtered amorphous Si thin films

1976 ◽  
Vol 37 (3) ◽  
pp. 429-440 ◽  
Author(s):  
J.E. Greene ◽  
L. Mei
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Metal Induced Crystallization ◽  
Amorphous Si ◽  
Induced Crystallization

scholarly journals Metal-Induced Crystallization Mechanism of Amorphous Si0.OGe0.4 Thin Film

Materia Japan ◽  
2004 ◽  
Vol 43 (12) ◽  
pp. 1010-1010
Author(s):  
Masaru Itakura ◽  
Noriyuki Kuwano
Keyword(s):  
Thin Film ◽  
Crystallization Mechanism ◽  
Metal Induced Crystallization ◽  
Amorphous Si ◽  
Induced Crystallization

Effect of Nano-Structures on the Optical Features of Hydrogenated Amorphous Si Films

2006 ◽  
pp. 954-957
Author(s):  
Myung Beom Park ◽  
Jae Hyun Shim ◽  
Nam Hee Cho
Keyword(s):  
Nano Structures ◽  
Amorphous Si ◽  
Si Films ◽  
Hydrogenated Amorphous

Multiple Pulse Irradiation Effects in Excimer Laser-Induced Crystallization of Amorphous Si Films

1993 ◽  
Vol 321 ◽  
Author(s):  
H. J. Kim ◽  
James S. Im
Keyword(s):  
Excimer Laser ◽  
Single Pulse ◽  
Pulse Irradiation ◽  
Multiple Pulse ◽  
Melting Phenomenon ◽  
Irradiation Energy ◽  
Crystallization Experiments ◽  
Amorphous Si ◽  
Si Films ◽  
Induced Crystallization

ABSTRACTWe have experimentally Investigated the effects that are associated with Multiple-pulse irradiation in the excimer laser processing of thin Si films on SiO2. Double-pulse irradiation experiments revealed results, which are consistent with that which is known from single-pulse crystallization experiments, and these experiments confirm the applicability of the transformation scenarios, which were derived from single pulse-induced crystallization experiments [1,2]. The results from the Multiple-pulse irradiation experiments clearly show that gradual and substantial grain enlargement can occur — and only occurs — when the irradiation energy density is close to but less than the level that is required to melt the film completely. Based on these findings, we argue that the grain enlargement effect is a near-complete melting phenomenon that is associated with polycrystalline Si films, and we present a grain boundary melting model to account for this phenomenon. A brief discussion on the apparent similarities and physical differences between the observed phenomenon and the solid state grain growth processes is provided herein.

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