Photoluminescence properties of modulation-doped multiple quantum wells under high pressure

1987 ◽  
Vol 3 (3) ◽  
pp. 273-275 ◽  
Author(s):  
B.A. Weinstein ◽  
S.K. Hark ◽  
C. Mailhiot ◽  
C.H. Perry
1996 ◽  
Vol 198 (1) ◽  
pp. 337-341 ◽  
Author(s):  
D. Patel ◽  
K. Interholzinger ◽  
P. Thiagarajan ◽  
G. Y. Robinson ◽  
C. S. Menoni

1993 ◽  
Vol 47 (7) ◽  
pp. 3765-3770 ◽  
Author(s):  
W. Shan ◽  
S. J. Hwang ◽  
J. J. Song ◽  
H. Q. Hou ◽  
C. W. Tu

1994 ◽  
Vol 358 ◽  
Author(s):  
Z.P. Wang ◽  
Z.X. Liu ◽  
H.X. Han ◽  
J.Q. Zhang ◽  
G.H. Li ◽  
...  

ABSTRACTWe have performed photoluminescence (PL) measurements at liquid nitrogen temperature under high pressure up to 5.5 GPa and in the temperature range 10-300 K at atmospheric pressure on {(ZnSe)30(ZnSe0.92Te0.08)30(ZnSe)30[(CdSe)1(ZnSe)2]9}x5 multiple quantum wells. The PL peaks, EB, E1 and Ew corresponding to the band edge luminescence in ZnSe barrier layer, the transitions from the first conduction subband to the heavy-hole subband in ZnSe0.92Te0.08 layers and [(CdSe)1(ZnSe)2]9 ultra short period superlattice quantum well (SPSLQW) layers have been observed. Experimental results show that ZnSe0.92Te0.08/ZnSe forms a type-I superlattice (SL) in contrast to the type-II ZnSe/ZnTe SL. The pressure coefficients of the EB, E1 and Ew exciton peaks have been determined as 67, 63 and 56 meV/GPa, respectively. With increasing temperature (or pressure), the E1 peak-intensity drastically decreases which is attributed to the thermal effect (or the appearance of many defects in ZnSe0.92Te0.08 under higher pressure).


2007 ◽  
Vol 38 (6-7) ◽  
pp. 767-770
Author(s):  
Li Shuti ◽  
Fan Guanghan ◽  
Zhou Tianming ◽  
Zheng Shuwen ◽  
Sun Huiqing

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