The role of oxygen defects engineering via passivation of the Al2O3 interfacial layer for the direct growth of a graphene-silicon Schottky junction solar cell
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2013 ◽
Vol 28
(5)
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pp. 055012
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2015 ◽
Vol 8
(7)
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pp. 2085-2092
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2019 ◽
Vol 126
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pp. 42-48
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2011 ◽
Vol 58
(9)
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pp. 3048-3052
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2018 ◽
Vol 34
(11)
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pp. 2197-2204
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2015 ◽
Vol 132
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pp. 230-236
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