Realization of controllable etching for ZnO film by NH4Cl aqueous solution and its influence on optical and electrical properties

2007 ◽  
Vol 253 (11) ◽  
pp. 5161-5165 ◽  
Author(s):  
Jingchang Sun ◽  
Jiming Bian ◽  
Hongwei Liang ◽  
Jianze Zhao ◽  
Lizhong Hu ◽  
...  
Keyword(s):  
Aqueous Solution ◽  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Zno Film

Influence of Li implantation on the optical and electrical properties of ZnO film

2011 ◽  
Author(s):  
Saurabh Nagar ◽  
Bhavesh Sinha ◽  
Arjun Mandal ◽  
S. K. Gupta ◽  
Subhananda Chakrabarti
Keyword(s):  
Electrical Properties ◽  
Optical And Electrical Properties ◽  
Zno Film

scholarly journals Optical and Electrical Properties of Tb–ZnO/SiO2 Structure in the Infrared Spectral Interval

2019 ◽  
Vol 64 (5) ◽  
pp. 434 ◽  
Author(s):  
O. V. Melnichuk ◽  
L. Yu. Melnichuk ◽  
N. O. Korsunska ◽  
L. Yu. Khomenkova ◽  
Ye. F. Venger
Keyword(s):  
Electrical Properties ◽  
Silicon Oxide ◽  
Oscillator Strengths ◽  
Zno Films ◽  
Spectral Interval ◽  
Reflection Spectra ◽  
Optical And Electrical Properties ◽  
Zno Film ◽  
Field Orientation ◽  
Sio2 Substrate

Optical and electrophysical properties of terbium-doped zinc oxide films have been studied, by using the external reflection IR spectroscopy. The films were deposited onto silicon oxide substrates with the help of the magnetron sputtering method. A theoretical analysis of the reflection spectra of the ZnO/SiO2 structure is carried out in the framework of a multioscillatory model in the spectral interval 50–1500 cm−1 and for the electrical field orientation perpendicular to the c-axis (E⊥C). The method of dispersion analysis is applied to determine the optical and electrical properties of ZnO films, as well as the oscillator strengths and damping coefficients in the ZnO film and the SiO2 substrate. The influences of the phonon and plasmon-phonon subsystems in the ZnO film on the shape of IR reflection spectra registered from the Tb–ZnO/SiO2 structure are elucidated.

The Optical and Electrical Properties of Al and (Al, Cu) Doped ZnO Film

2015 ◽  
Vol 1120-1121 ◽  
pp. 429-434 ◽  
Author(s):  
Dan Dan Wang ◽  
Qing Qing Fang ◽  
Jing Jing Yang
Keyword(s):  
Electrical Properties ◽  
Transport Properties ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Optical And Electrical Properties ◽  
Electric Transport ◽  
Zno Film ◽  
Doped Zno

The optical and electric transport properties of the Al:ZnO(AZO) and (Cu, Al):ZnO (CAZO) films deposited by pulsed laser deposition (PLD) were investigated in this paper. The experiment found the optical band gap (OBG) of AZO films at room temperature increased from 3.378eV of ZnO to 3.446eV of ZnO:Al (2min) sample, but decreased as continue add Al to ZnO:Al (4min), which were attributes to the Burstein-Moss (B-M) effect. For CAZO films, there is obvious change about hall mobility,ν, and resistivity,ρ, after doped Cu. It can be found that theνdecreased from to and theρincreased from to for AZO and CAZO, respectively, which is due to the scattering increasing between donor carriers and grain boundary as Cu2+ions increase, meanwhile, it was also found the decrease of OBG, which are very help to further understand the electric transport properties and the OBG effect of AZO-based films as well as its devices potential application.

Optical and Electrical Properties of P-Type ZnO Thin Film Post-Treated by Plasma-Enhanced Chemical Vapor Deposition

2014 ◽  
Vol 971-973 ◽  
pp. 115-118
Author(s):  
Ping Cao ◽  
Yue Bai ◽  
Zhi Qu
Keyword(s):  
Chemical Vapor Deposition ◽  
Electrical Properties ◽  
Vapor Deposition ◽  
Treatment Process ◽  
Chemical Vapor ◽  
Hole Density ◽  
Optical And Electrical Properties ◽  
Zno Film ◽  
Donor States ◽  
P Type

In this paper, the high quality p-type nitrogen-doped ZnO film was prepared by use of post-treated by plasma-enhanced chemical vapor deposition. The p-type ZnO with the hole density of 2.2×1016was obtained. The converting from n-type to p-type was observed, which was obvious on the analysis of the optical and electrical properties of the p-type ZnO. Nitrogen was incorporated into ZnO film during the treatment process to occupy the oxygen positions, and also partly compensated some donor defects. When the amount of activated nitrogen exceeded those donor states to realize an effective compensation, the transformation from n-type to p-type happened.

Impact of N5+ion implantation on optical and electrical properties of polycrystalline ZnO film

2014 ◽  
Vol 169 (11) ◽  
pp. 965-979
Author(s):  
Ashutosh Kumar ◽  
Sunita Keshri ◽  
Beauty Pandey ◽  
J. B. M. Krishna ◽  
Dipankar Das
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
Optical And Electrical Properties ◽  
Zno Film

Optical and Electrical Properties of Organic Conducting Polymers

2014 ◽  
Vol 8 (1) ◽  
pp. 1457-1463
Author(s):  
Salah Abdulla Hasoon
Keyword(s):  
Electrical Properties ◽  
Conjugated Polymer ◽  
Polymeric Materials ◽  
Quantum Mechanical ◽  
Optical And Electrical Properties ◽  
Electrically Conducting ◽  
Temperature Ranges ◽  
Lithium Tetrafluoroborate ◽  
Absorbance Peak ◽  
Polymerization Method

Novel electrically conducting polymeric materials are prepared in this work. Polythiophene (PT) and poly (3-Methelthiophene) (P3MT) films were prepared by electro-polymerization method using cyclic voltammetry in acetonitrile as a solvent and lithium tetrafluoroborate as the electrolyte on a gold electrode. Electrical properties of P3MT have been examined in different environments using UV-Vis absorption spectroscopy and quantum mechanical ab initio calculations, The observed absorption peaks at 314 and 415 nm, were attributed to the n-π* and π-π* transitions, respectively in the conjugated polymer chain, in contrast, the observed absorbance peak at 649 nm, is responsible for electric conduction. The temperature dependence of the conductivity can be fitted to the Arrhenius and the VTF equations in different temperature ranges.

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