Effects of oxygen plasma treatment power on surface properties of poly(p-phenylene benzobisoxazole) fibers

2008 ◽  
Vol 255 (5) ◽  
pp. 3153-3158 ◽  
Author(s):  
Ping Chen ◽  
Chengshuang Zhang ◽  
Xiangyi Zhang ◽  
Baichen Wang ◽  
Wei Li ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Surface Properties ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment

Surface Properties Modification of Nanostructured ZnO Films

2012 ◽  
Vol 509 ◽  
pp. 182-184 ◽  
Author(s):  
Chi Jung Chang ◽  
Shao Tsu Hung ◽  
Che Wei Pan
Keyword(s):  
Plasma Treatment ◽  
Surface Properties ◽  
Oxygen Plasma ◽  
Zno Films ◽  
Oxygen Plasma Treatment ◽  
Dye Molecules ◽  
Zno Film ◽  
Nanostructured Film ◽  
Wetting Properties

Nanostructured ZnO films are hydrophobic. The effects of oxygen plasma treatment on the wetting properties of the ZnO film surfaces were studied. The oxygen plasma treatment makes the nanostructured ZnO films superhydrophilic and helps to enhance the absorption of the dye molecules on the nanostructured film.

scholarly journals Study of the surface properties of ZnO nanocolumns used for thin-film solar cells

2017 ◽  
Vol 8 ◽  
pp. 446-451 ◽  
Author(s):  
Neda Neykova ◽  
Jiri Stuchlik ◽  
Karel Hruska ◽  
Ales Poruba ◽  
Zdenek Remes ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Plasma Treatment ◽  
Surface Properties ◽  
Oxygen Plasma ◽  
Fused Silica ◽  
Thin Film Solar Cells ◽  
Oxygen Plasma Treatment ◽  
Strong Impact ◽  
Plasma Treatments

Densely packed ZnO nanocolumns (NCs), perpendicularly oriented to the fused-silica substrates were directly grown under hydrothermal conditions at 90 °C, with a growth rate of around 0.2 μm/h. The morphology of the nanostructures was visualized and analyzed by scanning electron microscopy (SEM). The surface properties of ZnO NCs and the binding state of present elements were investigated before and after different plasma treatments, typically used in plasma-enhanced CVD solar cell deposition processes, by X-ray photoelectron spectroscopy (XPS). Photothermal deflection spectroscopy (PDS) was used to investigate the optical and photoelectrical characteristics of the ZnO NCs, and the changes induced to the absorptance by the plasma treatments. A strong impact of hydrogen plasma treatment on the free-carrier and defect absorption of ZnO NCs has been directly detected in the PDS spectra. Although oxygen plasma treatment was proven to be more efficient in the surface activation of the ZnO NC, the PDS analysis showed that the plasma treatment left the optical and photoelectrical features of the ZnO NCs intact. Thus, it was proven that the selected oxygen plasma treatment can be of great benefit for the development of thin film solar cells based on ZnO NCs.

Effects of oxygen plasma treatment on the surface properties of Ga-doped ZnO thin films

2013 ◽  
Vol 114 (2) ◽  
pp. 509-513 ◽  
Author(s):  
Ya Xue ◽  
Haiping He ◽  
Yizheng Jin ◽  
Bin Lu ◽  
Hongtao Cao ◽  
...  
Keyword(s):  
Thin Films ◽  
Plasma Treatment ◽  
Surface Properties ◽  
Oxygen Plasma ◽  
Zno Thin Films ◽  
Oxygen Plasma Treatment ◽  
Doped Zno

High Breakdown Voltage GaN HEMT Device Fabricated on Self-Standing GaN Substrate

2013 ◽  
Vol 347-350 ◽  
pp. 1535-1539
Author(s):  
Jian Jun Zhou ◽  
Liang Li ◽  
Hai Yan Lu ◽  
Ceng Kong ◽  
Yue Chan Kong ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Breakdown Voltage ◽  
Oxygen Plasma ◽  
Cutoff Frequency ◽  
Chemical Vapor ◽  
Current Gain ◽  
Organic Chemical ◽  
Oxygen Plasma Treatment ◽  
Gan Hemt ◽  
High Breakdown Voltage

In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.8μm gate length GaN HEMT device was fabricated with oxygen plasma treatment. By using oxygen plasma treatment, gate forward working voltage is increased, and a breakdown voltage of more than 170V is demonstrated. The measured maximum drain current of the device is larger than 700 mA/mm at 4V gate bias voltage. The maximum transconductance of the device is 162 mS/mm. In addition, high frequency performance of the GaN HEMT device is also obtained. The current gain cutoff frequency and power gain cutoff frequency are 19.7 GHz and 32.8 GHz, respectively. A high fT-LG product of 15.76 GHzμm indicating that homoepitaxy technology is helpful to improve the frequency performance of the device.

LDI-MS examination of oxygen plasma modified polymer for designing tailored implant biointerfaces

RSC Advances ◽  
2014 ◽  
Vol 4 (50) ◽  
pp. 26240-26243 ◽  
Author(s):  
M. Gołda-Cępa ◽  
N. Aminlashgari ◽  
M. Hakkarainen ◽  
K. Engvall ◽  
A. Kotarba
Keyword(s):  
Plasma Treatment ◽  
Oxygen Plasma ◽  
Oxygen Plasma Treatment ◽  
Parylene C ◽  
Modified Polymer

A versatile parylene C coating for biomaterials was fabricated by the mild oxygen plasma treatment and examined by the use of LDI-MS..

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