Reactive-ion etching of nylon fabric meshes using oxygen plasma for creating surface nanostructures

2015 ◽  
Vol 356 ◽  
pp. 408-415 ◽  
Author(s):  
Hernando S. Salapare ◽  
Thierry Darmanin ◽  
Frédéric Guittard
Keyword(s):  
Oxygen Plasma ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Nylon Fabric ◽  
Surface Nanostructures

scholarly journals An Assessment of Surface Treatments for Adhesion of Polyimide Thin Films

Polymers ◽  
2021 ◽  
Vol 13 (12) ◽  
pp. 1955
Author(s):  
Marco Cen-Puc ◽  
Andreas Schander ◽  
Minerva G. Vargas Gleason ◽  
Walter Lang
Keyword(s):  
Flexible Electronics ◽  
Oxygen Plasma ◽  
Reactive Ion Etching ◽  
Peel Test ◽  
Scratch Test ◽  
Peel Strength ◽  
Surface Treatments ◽  
Oxygen Plasma Treatment ◽  
Polyimide Films ◽  
Ion Etching

Polyimide films are currently of great interest for the development of flexible electronics and sensors. In order to ensure a proper integration with other materials and PI itself, some sort of surface modification is required. In this work, microwave oxygen plasma, reactive ion etching oxygen plasma, combination of KOH and HCl solutions, and polyethylenimine solution were used as surface treatments of PI films. Treatments were compared to find the best method to promote the adhesion between two polyimide films. The first selection of the treatment conditions for each method was based on changes in the contact angle with deionized water. Afterward, further qualitative (scratch test) and a quantitative adhesion assessment (peel test) were performed. Both scratch test and peel strength indicated that oxygen plasma treatment using reactive ion etching equipment is the most promising approach for promoting the adhesion between polyimide films.

Reactive ion etching of poly (cyclohexene carbonate) in oxygen plasma

2018 ◽  
Vol 191 ◽  
pp. 1-9 ◽  
Author(s):  
Xingjun Xue ◽  
Kun Zhou ◽  
Jian Cai ◽  
Qian Wang ◽  
Zheyao Wang
Keyword(s):  
Oxygen Plasma ◽  
Reactive Ion Etching ◽  
Ion Etching

Kinetics of Reactive Ion Etching of Polymers in an Oxygen Plasma: The Importance of Direct Reactive Ion Etching

1993 ◽  
Vol 334 ◽  
Author(s):  
Sandra W. Graham ◽  
Christoph SteinbrüChel
Keyword(s):  
Polymer Films ◽  
Langmuir Probe ◽  
Oxygen Plasma ◽  
Reactive Ion Etching ◽  
Surface Chemical ◽  
Ion Etching ◽  
Modified Model ◽  
Physical Sputtering ◽  
The Relationship ◽  
Kinetics Of

AbstractThe etching of polymer films in oxygen-based plasmas has been studied between 5 and 100 mTorr in a reactive ion etch reactor using Langmuir probe and optical actinometry measurements. Results for the etch yield (the number of carbon atoms removed per incident ion) are analyzed in terms of a surface-chemical model for ion-enhanced etching proposed by Joubert et al. (J. Appl. Phys. 65, 5096 (1989)). A proper description of the results requires that this model be modified by including a term due to direct reactive ion etching and physical sputtering. The contribution by direct reactive ion etching to the overall etching turns out to be significant under all conditions and even dominant at the lowest pressures. The modified model should be applicable to the etching of polymers in other types of reactors, especially highplasma- density reactors. The relationship between these results and the anisotropic patterning of polymer films is also discussed.

Anisotropic and Selective Reactive Ion Etching of SiC in CHF3 and Oxygen Plasma

1986 ◽  
Vol 76 ◽  
Author(s):  
W-S. Pan ◽  
A. J. Steckl
Keyword(s):  
Thin Films ◽  
Emission Intensity ◽  
Etch Rate ◽  
Oxygen Plasma ◽  
Reactive Ion Etching ◽  
Anisotropic Etching ◽  
Rf Power ◽  
Ion Etching ◽  
Oxygen Percentage ◽  
Dc Potential

ABSTRACTThe use of CHF3 plus oxygen plasma to achieve selective and anisotropic patterning of SiC thin films in the reactive ion etching (RIE) mode is reported. Experiments were performed using various levels of oxygen percentage (from zero to 90%), pressure (from 20 to 300 mTorr) and power (from 100W to 350W). Anisotropic etching of SiC with a vertical-to-lateral etch ratio in excess of 8:1 was measured for a CHF3 + 75%02 mixture at 20mT pressure and 200W RF power. Under these conditions, the SiC etch rate was measured to be 400 A/min and the selectivity over Si was approximately 2.2:1. The effect of the cathode DC potential and emission intensity of various species in the plasma on the SiC and Si etch rates is considered.

Nanoscale Observation of Dielectric Damage to Low k MSQ Interconnects from Reactive Ion Etching and Ash Treatment

2005 ◽  
Vol 863 ◽  
Author(s):  
Todd S. Gross ◽  
Shaoning Yao
Keyword(s):  
Dielectric Constant ◽  
Cross Sections ◽  
Oxygen Plasma ◽  
Electrostatic Force ◽  
Reactive Ion Etching ◽  
Electrostatic Force Microscopy ◽  
Ion Etching ◽  
Force Microscopy ◽  
Low K ◽  
Resolution Single

AbstractElectrostatic force microscopy (EFM) was used to measure the extent of dielectric damage from plasma processing of nanoporous, low k methyl silsesqioxane (MSQ) interconnect structures with approximately 50 nm spatial resolution. Single level patterns were formed in 200 nm thick MSQ films by reactive ion etching (RIE) and were subsequently backfilled with an MSQ layer that was not exposed to plasma to act as a reference. The backfill was performed on as-etched structures with the photoresist intact and on structures in which the photoresist was removed by an oxygen plasma (ash) treatment. The EFM images on cross sections and feather sections show that the damage from the RIE penetrated ∼100 nm in from the sidewall and that the redeposited polymer had a higher k than the MSQ (k∼2.2). The etched and ashed MSQ exhibits a higher dielectric constant than the reference MSQ if it was exposed to water and has nearly the same dielectric constant as the reference with no water exposure. This suggests that the damage from the ash acts to make the MSQ hydrophilic.

Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

1996 ◽  
Author(s):  
George F. McLane ◽  
Paul Cooke ◽  
Robert P. Moerkirk
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching

2020 ◽  
Vol 54 (6) ◽  
pp. 672-676
Author(s):  
L. K. Markov ◽  
I. P. Smirnova ◽  
M. V. Kukushkin ◽  
A. S. Pavluchenko
Keyword(s):  
Reactive Ion Etching ◽  
Surface Profile ◽  
Mixture Composition ◽  
Gas Mixture ◽  
Ion Etching

Reactive ion etching of III-V compounds using C2H6/H2

1988 ◽  
Vol 24 (13) ◽  
pp. 798 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
T. Ohishi ◽  
H. Ogata
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching
Sign in / Sign up

Export Citation Format

Share Document