Many-body, Pauli blocking and carrier-impurity interaction effects on the band gap of aluminum doped zinc oxide thin films: A new method to evaluate both hole and electron effective masses of degenerate semiconductors

2016 ◽  
Vol 16 (9) ◽  
pp. 949-955 ◽  
Author(s):  
Asghar Esmaeili
Materials ◽  
2012 ◽  
Vol 5 (8) ◽  
pp. 1404-1412 ◽  
Author(s):  
Thrinath Reddy Ramireddy ◽  
Velmurugan Venugopal ◽  
Jagadeesh Babu Bellam ◽  
Arturo Maldonado ◽  
Jaime Vega-Pérez ◽  
...  

2013 ◽  
Vol 24 (12) ◽  
pp. 5091-5096 ◽  
Author(s):  
Nihan Akin ◽  
S. Sebnem Cetin ◽  
Mehmet Cakmak ◽  
Tofig Memmedli ◽  
Suleyman Ozcelik

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
M. Acosta ◽  
I. Riech ◽  
E. Martín-Tovar

Zinc oxide (ZnO) thin films were grown by nonreactive RF sputtering at room temperature under varying argon pressures (PAr). Their optical band gap was found to increase from 3.58 to 4.34 eV when the argon pressure increases from 2.67 to 10.66 Pa. After annealing at 200°C and 500°C, optical band gaps decrease considerably. The observed widening of the band gap with increasingPArcan be understood as being a consequence of the poorer crystallinity of films grown at higher pressures. Measurements of morphological and electrical properties of these films correlate well with this picture. Our main aim is to understand the effects ofPAron several physical properties of the films, and most importantly on its optical band gap.


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