High power impulse magnetron sputtering (HiPIMS) for the fabrication of antimicrobial and transparent TiO2 thin films

2022 ◽  
Vol 36 ◽  
pp. 100782
Author(s):  
Bih-Show Lou ◽  
Wei-Ting Chen ◽  
Wahyu Diyatmika ◽  
Jong-Hong Lu ◽  
Chen-Te Chang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Power ◽  
Tio2 Thin Films

Growth of TiO2 thin films on Si(001) and SiO2 by reactive high power impulse magnetron sputtering

2011 ◽  
Vol 1352 ◽  
Author(s):  
F. Magnus ◽  
B. Agnarsson ◽  
A. S. Ingason ◽  
K. Leosson ◽  
S. Olafsson ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
High Power ◽  
Amorphous Matrix ◽  
Dc Magnetron Sputtering ◽  
Tio2 Thin Films ◽  
Temperature Range ◽  
Order Of Magnitude

ABSTRACTThin TiO2 films were grown on Si(001) and SiO2 substrates by reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at temperatures ranging from 300 to 700 °C. Both dcMS and HiPIMS produce polycrystalline rutile TiO2 grains, embedded in an amorphous matrix, despite no postannealing taking place. HiPIMS results in significantly larger grains, approaching 50% of the film thickness at 700 °C. In addition, the surface roughness of HiPIMS-grown films is below 1 nm rms in the temperature range 300–500 °C which is an order of magnitude lower than that of dcMS-grown films. The results show that smooth, rutile TiO2 films can be obtained by HiPIMS at relatively low growth temperatures, without postannealing.

scholarly journals High Power Impulse Magnetron Sputtering of In2O3/Sn Cold Sprayed Composite Target

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1228
Author(s):  
Marcin Winnicki ◽  
Artur Wiatrowski ◽  
Michał Mazur
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Voltage ◽  
High Power ◽  
Power Supply ◽  
Indium Tin Oxide ◽  
Volume Ratio ◽  
Cold Spraying ◽  
High Voltage Power Supply ◽  
Composite Target

High Power Impulse Magnetron Sputtering (HiPIMS) was used for deposition of indium tin oxide (ITO) transparent thin films at low substrate temperature. A hybrid-type composite target was self-prepared by low-pressure cold spraying process. Prior to spraying In2O3 and oxidized Sn powders were mixed in a volume ratio of 3:1. Composite In2O3/Sn coating had a mean thickness of 900 µm. HiPIMS process was performed in various mixtures of Ar:O2: (i) 100:0 vol.%, (ii) 90:10 vol.%, (iii) 75:25 vol.%, (iv) 50:50 vol.%, and (v) 0:100 vol.%. Oxygen rich atmosphere was necessary to oxidize tin atoms. Self-design, simple high voltage power switch capable of charging the 20 µF capacitor bank from external high voltage power supply worked as a power supply for an unbalanced magnetron source. ITO thin films with thickness in the range of 30–40 nm were obtained after 300 deposition pulses of 900 V and deposition time of 900 s. The highest transmission of 88% at λ = 550 nm provided 0:100 vol. % Ar:O2 mixture, together with the lowest resistivity of 0.03 Ω·cm.

Deposition of highly textured AlN thin films by reactive high power impulse magnetron sputtering

2015 ◽  
Vol 33 (2) ◽  
pp. 021518 ◽  
Author(s):  
Milena A. Moreira ◽  
Tobias Törndahl ◽  
Ilia Katardjiev ◽  
Tomas Kubart
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
High Power
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