scholarly journals Theoretical and experimental evaluation on the electrical properties of multi-junction solar cells in a reflective concentration photovoltaic system

2022 ◽  
Vol 8 ◽  
pp. 820-831
Author(s):  
Zilong Wang ◽  
Hua Zhang ◽  
Binlin Dou ◽  
Guanhua Zhang ◽  
Weidong Wu
Author(s):  
Francisco Fabregat-Santiago ◽  
Ramon Arcas ◽  
Elena Mas-Marza

2009 ◽  
Vol 2 (1) ◽  
pp. 110-112 ◽  
Author(s):  
Sheeja Krishnan ◽  
Ganesh Sanjeev ◽  
Manjunatha Pattabi ◽  
X. Mathew

Joule ◽  
2021 ◽  
Vol 5 (3) ◽  
pp. 659-672
Author(s):  
Minjin Kim ◽  
In-woo Choi ◽  
Seung Ju Choi ◽  
Ji Won Song ◽  
Sung-In Mo ◽  
...  

2014 ◽  
Vol 59 (1) ◽  
pp. 247-252 ◽  
Author(s):  
M. Musztyfaga-Staszuk ◽  
L.A. Dobrzanski ◽  
S. Rusz ◽  
M. Staszuk

Abstract The aim of the paper was to apply the newly developed instruments ‘Corescan’ and ‘Sherescan’ in order to measure the essential parameters of producing solar cells in comparison with the standard techniques. The standard technique named the Transmission Line Method (TLM) is one way to monitor contacting process to measure contact resistance locally between the substrate and metallization. Nowadays, contact resistance is measured over the whole photovoltaic cell using Corescanner instrument. The Sherescan device in comparison with standard devices gives a possibility to measure the sheet resistance of the emitter of silicon wafers and determine of both P/N recognition and metal resistance. The Screen Printing (SP) method is the most widely used contact formation technique for commercial silicon solar cells. The contact resistance of manufactured front metallization depends of both the paste composition and co-firing conditions. Screen printed front side metallization and next to co-fired in the infrared conveyor furnace was carried out at various temperature from 770°C to 920°C. The silver paste used in the present paper is commercial. The investigations were carried out on monocrystalline silicon wafers. The topography of co-fired in the infrared belt furnace front metallization was investigated using the atomic force microscope and scanning electron microscope (SEM). There were researched also cross sections of front contacts using SEM microscope. Front contacts of the solar cells were formed on non-textured silicon surface with coated antireflection layer. On one hand, based on electrical properties investigations using Sherescan instrument it was obtained the knowledge of the emitter sheet resistance across the surface of a wafer, what is essential in optimizing the emitter diffusion process. On the other hand, it was found using Corescan instrument that the higher temperature apparently results in a strongly decreased contact resistance.


2018 ◽  
Vol 176 ◽  
pp. 204-211 ◽  
Author(s):  
L.C. Rendler ◽  
J. Walter ◽  
S. Goldenberg ◽  
A.J. Beinert ◽  
S. Wiese ◽  
...  

2016 ◽  
Vol 157 ◽  
pp. 10-17 ◽  
Author(s):  
Y. Kumar ◽  
E. Regalado-Pérez ◽  
Arturo Martinez Ayala ◽  
N.R. Mathews ◽  
Xavier Mathew

2015 ◽  
Vol 1734 ◽  
Author(s):  
Kento Nakanishi ◽  
Jun Otsuka ◽  
Masanori Hiratsuka ◽  
Chen Chung Du ◽  
Akira Shirakura ◽  
...  

ABSTRACTDiamond-like carbon (DLC) has widespread attention as a new material for its application to thin film solar cells and other semiconducting devices. DLC can be produced at a lower cost than amorphous silicon, which is utilized for solar cells today. However, the electrical properties of DLC are insufficient for this purpose because of many dangling bonds in DLC. To solve this problem, we investigated the effects of the fluorine incorporation on the structural and electrical properties of DLC.We prepared five kinds of fluorinated DLC (F-DLC) thin film with different amounts of fluorine. Films were deposited by the radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD) method. C6H6 and C6HF5 were used as source gases. The total gas flow rate was constant and the gas flow rate ratio R (=C6H6 / (C6H6 + C6HF5)) was changed from 0 to 1 in 0.25 ratio steps. We also prepared nitrogen doped DLC (F-DLC) on p-Si using N2 gas as a doping gas to form nitrogen doped DLC (F-DLC) / p-Si heterojunction diodes.X-ray photoelectron spectroscopy (XPS) showed that fluorine concentration in the DLC films was controlled. Moreover, the XPS analysis of the C1s spectrum at R=2/4 showed the presence of CF bonding. At R=1, CF2 bonding was observed in addition to CF bonding. The sheet resistivity of the films changed from 3.07×1012 to 4.86×109 Ω. The minimum value was obtained at R=2/4. The current-voltage characteristics indicated that nitrogen doped F-DLC of 2/4 and p-Si heterojunction diode exhibited the best rectification characteristics and its energy conversion efficiency had been maximized. This is because of a decrease of dangling bonds density by ESR analysis and an increase of sp2 structures by Raman analysis. When the fluorine is over certain content, the sheet resistivity increases because chain structures become larger, which is due to the CF2 bonding in F-DLC prevents ring structures. Many C2F4 species were observed and it may become precursors of the chain structure domains, such as (CF2)n.In this study, we revealed effects of fluorine incorporation on DLC and succeeded in increasing its conductivity and improving rectification characteristics of DLC/ p-Si hetero-junction diodes. Our results indicate that DLC fluorination is effective for the semiconducting material, such as solar cell applications.


2017 ◽  
Vol 5 (25) ◽  
pp. 12729-12734 ◽  
Author(s):  
Yonghui Lee ◽  
Sanghyun Paek ◽  
Kyung Taek Cho ◽  
Emad Oveisi ◽  
Peng Gao ◽  
...  

The morphological, opto-physical and electrical properties of the SnO2layer in perovskite solar cells are investigated.


2019 ◽  

Transparent conducting oxide (TCO) thin films are materials of significance for their applications in optoelectronics and sun powered cells. Fluorine-doped tin oxide (FTO) is an elective material in the advancement of TCO films. This paper reports the impact of fluorine doping on structural, optical and electrical properties of tin oxide thin films for solar cells application. The sol-gel was prepared from anhydrous stannous chloride, SnCl2 as an originator, 2-methoxyethanol as a solvent, di-ethanolamine as a preservative and ammonium fluoride as the dopant source. FTO precursor solution was formulated to obtain 0, 5, 10, 15 and 20 % doping concentration and deposited on glass substrates by means of spin coater at the rate of 2000 rpm for 40 seconds. After pre-heated at 200 oC, the samples were annealed at 600 oC for 2 h. The structural, optical and electrical characteristics of prepared films were characterized using X-ray diffraction (XRD) analysis, UV-visible spectroscopy and electrical measurement. X-ray diffraction (XRD) investigation of the films demonstrated that the films were polycrystalline in nature with tetragonal-cassiterite structure with most extraordinary pinnacle having a grain size of 17.01 nm. Doping with fluorine decreases the crystallite size. There was increment in the absorbance of the film with increasing wavelength and the transmittance was basically reduced with increasing fluorine doping in the visible region. The energy band gaps were in the range of 4.106-4.121 eV. The sheet resistance were observed to decrease as the doping percentage of fluorine increased with exception at higher doping of 15 and 20 %. In view of these outcomes, FTO thin films prepared could have useful application in transparent conducting oxide electrode in solar cell.


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