Multi-junction solar cells electrical characterization by neuronal networks under different irradiance, spectrum and cell temperature

Energy ◽  
2015 ◽  
Vol 90 ◽  
pp. 846-856 ◽  
Author(s):  
Eduardo F. Fernández ◽  
Florencia Almonacid ◽  
Antonio J. Garcia-Loureiro
Keyword(s):  
Solar Cells ◽  
Neuronal Networks ◽  
Electrical Characterization ◽  
Cell Temperature ◽  
Irradiance Spectrum

scholarly journals Growth of GaP Layers on Si Substrates in a Standard MOVPE Reactor for Multijunction Solar Cells

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 398
Author(s):  
Pablo Caño ◽  
Carmen M. Ruiz ◽  
Amalia Navarro ◽  
Beatriz Galiana ◽  
Iván García ◽  
...  
Keyword(s):  
Solar Cells ◽  
Gallium Phosphide ◽  
Growth Process ◽  
Electrical Characterization ◽  
Substrate Preparation ◽  
Nucleation Layer ◽  
Si Substrates ◽  
Ideal Candidate ◽  
Multijunction Solar Cells ◽  
Multijunction Solar Cell

Gallium phosphide (GaP) is an ideal candidate to implement a III-V nucleation layer on a silicon substrate. The optimization of this nucleation has been pursued for decades, since it can form a virtual substrate to grow monolithically III-V devices. In this work we present a GaP nucleation approach using a standard MOVPE reactor with regular precursors. This design simplifies the epitaxial growth in comparison to other routines reported, making the manufacturing process converge to an industrial scale. In short, our approach intends to mimic what is done to grow multijunction solar cells on Ge by MOVPE, namely, to develop a growth process that uses a single reactor to manufacture the complete III-V structure, at common MOVPE process temperatures, using conventional precursors. Here, we present the different steps in such GaP nucleation routine, which include the substrate preparation, the nucleation itself and the creation of a p-n junction for a Si bottom cell. The morphological and structural measurements have been made with AFM, SEM, TEM and Raman spectroscopy. These results show a promising surface for subsequent III-V growth with limited roughness and high crystallographic quality. For its part, the electrical characterization reveals that the routine has also formed a p-n junction that can serve as bottom subcell for the multijunction solar cell.

scholarly journals Engineering of TiO2 or ZnO—Graphene Oxide Nanoheterojunctions for Hybrid Solar Cells Devices

Photonics ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 75
Author(s):  
Duarte Carreira ◽  
Paulo A. Ribeiro ◽  
Maria Raposo ◽  
Susana Sério
Keyword(s):  
Graphene Oxide ◽  
Solar Cells ◽  
Fossil Fuels ◽  
Electrical Characterization ◽  
Modern Society ◽  
Clean Energy ◽  
Zno Films ◽  
Layer By Layer ◽  
Glass Substrates ◽  
Rc Circuit

It is currently of huge importance to find alternatives to fossil fuels to produce clean energy and to ensure the energy demands of modern society. In the present work, two types of hybrid solar cell devices were developed and characterized. The photoactive layers of the hybrid heterojunctions comprise poly (allylamine chloride) (PAH) and graphene oxide (GO) and TiO2 or ZnO films, which were deposited using the layer-by-layer technique and DC-reactive magnetron sputtering, respectively, onto fluorine-doped tin oxide (FTO)-coated glass substrates. Scanning electron microscopy evidenced a homogeneous inorganic layer, the surface morphology of which was dependent on the number of organic bilayers. The electrical characterization pointed out that FTO/(PAH/GO)50/TiO2/Al, FTO/(PAH/GO)30/ZnO/Al, and FTO/(PAH/GO)50/ZnO/Al architectures were the only ones to exhibit a diode behavior, and the last one experienced a decrease in current in a low-humidity environment. The (PAH/GO)20 impedance spectroscopy study further revealed the typical impedance of a parallel RC circuit for a dry environment, whereas in a humid environment, it approached the impedance of a series of three parallel RC circuits, indicating that water and oxygen contribute to other conduction processes. Finally, the achieved devices should be encapsulated to work successfully as solar cells.

Performance enhancement of high temperature SnO2-based planar perovskite solar cells: electrical characterization and understanding of the mechanism

2016 ◽  
Vol 4 (21) ◽  
pp. 8374-8383 ◽  
Author(s):  
Liangbin Xiong ◽  
Minchao Qin ◽  
Guang Yang ◽  
Yaxiong Guo ◽  
Hongwei Lei ◽  
...  
Keyword(s):  
Solar Cells ◽  
Steady State ◽  
High Temperature ◽  
Performance Enhancement ◽  
Perovskite Solar Cells ◽  
Electrical Characterization ◽  
Mg Doping ◽  
Interfacial Contact

Mg doping improves interfacial contact and endows low hysteresis high temperature processed SnO2-based PSCs with a steady-state PCE of 14.55%.

Preparation of CIGSS Thin-Film Solar Cells by Rapid Thermal Processing

2006 ◽  
Vol 129 (3) ◽  
pp. 323-326
Author(s):  
Sachin S. Kulkarni ◽  
Jyoti S. Shirolikar ◽  
Neelkanth G. Dhere
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Electrical Characterization ◽  
Soda Lime ◽  
Thin Film Solar Cells ◽  
Soda Lime Glass ◽  
X Ray

Rapid thermal processing (RTP) provides a way to rapidly heat substrates to an elevated temperature to perform relatively short duration processes, typically less than 2–3min long. RTP can be utilized to minimize the process cycle time without compromising process uniformity, thus eliminating a bottleneck in CuIn1−xGaxSe2−ySy (CIGSS) module fabrication. Some approaches have been able to realize solar cells with conversion efficiencies close or equal to those for conventionally processed solar cells with similar device structures. A RTP reactor for preparation of CIGSS thin films on 10cm×10cm substrates has been designed, assembled, and tested at the Florida Solar Energy Center’s PV Materials Lab. This paper describes the synthesis and characterization of CIGSS thin-film solar cells by the RTP technique. Materials characterization of these films was done by scanning electron microscopy, x-ray energy dispersive spectroscopy, x-ray diffraction, Auger electron spectroscopy, electron probe microanalysis, and electrical characterization was done by current–voltage measurements on soda lime glass substrates by the RTP technique. Encouraging results were obtained during the first few experimental sets, demonstrating that reasonable solar cell efficiencies (up to 9%) can be achieved with relatively shorter cycle times, lower thermal budgets, and without using toxic gases.

Electrical characterization of defects in Cu(In,Ga)Se2 solar cells containing a ZnSe or a CdS buffer layer

2001 ◽  
Vol 387 (1-2) ◽  
pp. 231-234 ◽  
Author(s):  
M Munzel ◽  
C Deibel ◽  
V Dyakonov ◽  
J Parisi ◽  
W Riedl ◽  
...  
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Electrical Characterization

scholarly journals Electrical characterization of CIGS thin-film solar cells by two- and four-wire probe technique

2020 ◽  
Vol 34 (11) ◽  
pp. 2050102
Author(s):  
Amirhosein Mosavi ◽  
Beszedes Bertalan ◽  
Felde Imre ◽  
Laszlo Nadai ◽  
Nima E. Gorji
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Current Density ◽  
Ideality Factor ◽  
Electrical Characterization ◽  
Load Resistance ◽  
Internal Resistance ◽  
Thin Film Solar Cells ◽  
Wire Probe

A precise characterization of thin-film solar cells is of huge importance for obtaining high open-circuit voltage and low recombination rates from the interfaces or within the bulk of the main materials. Among many electrical characterization techniques, the two- and four-wire probe using the Cascade instrument is of interest since the resistance of the wires and the electrical contacts can be excluded by the additional two wires in four-wire probe configuration. In this paper, both two- and four-point probes configuration are employed to characterize the CIGS chalcogenide thin-film solar cells. The two-wire probe has been used to measure the current–voltage characteristics of the cell which results in a huge internal resistance. Therefore, the four-wire connection is also used to eliminate the load resistance to enhance the characterization’s accuracy. The load resistance in the two-wire probe diminishes the photogenerated current density at smaller voltage ranges. In contrast, the proposed four-wire probe collects more current at higher voltages due to enhanced carrier collection efficiency from contact electrodes. The current conduction mechanism is also identified at every voltage region represented by the value of the ideality factor of that voltage region. It is observed that a longer time given to the charge collection results in increased current density at a higher voltage. According to the results and device characteristics, a novel double-diode model is suggested to extract the saturation current density, shunt and series resistances and ideality factor of the cells. These cells are shown to be efficient in terms of low recombination at the interfaces and with lower series resistance as the quality of the materials is in its most possible conductive form. The measured internal resistance and saturation current density and ideality factor of the two measurement configurations are measured and compared.

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