scholarly journals Small effect of water incorporation on dislocation mobility in olivine: Negligible creep enhancement and water-induced fabric transition in the asthenosphere

2022 ◽  
Vol 579 ◽  
pp. 117360
Author(s):  
Lin Wang ◽  
Artem Chanyshev ◽  
Nobuyoshi Miyajima ◽  
Takaaki Kawazoe ◽  
Stephan Blaha ◽  
...  
Author(s):  
R. Haswell ◽  
U. Bangert ◽  
P. Charsley

A knowledge of the behaviour of dislocations in semiconducting materials is essential to the understanding of devices which use them . This work is concerned with dislocations in alloys related to the semiconductor GaAs . Previous work on GaAs has shown that microtwinning occurs on one of the <110> rosette arms after indentation in preference to the other . We have shown that the effect of replacing some of the Ga atoms by Al results in microtwinning in both of the rosette arms.In the work to be reported dislocations in specimens of different compositions of Gax Al(1-x) As and Gax In(1-x) As have been studied by using micro indentation on a (001) face at room temperature . A range of electron microscope techniques have been used to investigate the type of dislocations and stacking faults/microtwins in the rosette arms , which are parallel to the [110] and [10] , as a function of composition for both alloys . Under certain conditions microtwinning occurs in both directions . This will be discussed in terms of the dislocation mobility.


Agronomie ◽  
2003 ◽  
Vol 23 (2) ◽  
pp. 181-190 ◽  
Author(s):  
Christophe Tourneux ◽  
Andr� Devaux ◽  
Maria Ren� Camacho ◽  
Pablo Mamani ◽  
Jean-Fran�ois Ledent

1982 ◽  
Vol 43 (C9) ◽  
pp. C9-455-C9-458 ◽  
Author(s):  
M. Takata ◽  
M. Tomozawa ◽  
J. Acocella ◽  
J. Molinelli ◽  
C. Y. Erwin ◽  
...  

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