Harmonic-based expected life estimation of electric arc furnace's high voltage polymeric insulated cables based on electro-thermal stresses considering sheath bonding methods and transient over-voltages

2022 ◽  
Vol 204 ◽  
pp. 107699
Author(s):  
Ahmadreza. Jamali-Abnavi ◽  
Hamed. Hashemi-Dezaki
2015 ◽  
Vol 2015 (1) ◽  
pp. 000359-000364 ◽  
Author(s):  
Adam Morgan ◽  
Ankan De ◽  
Haotao Ke ◽  
Xin Zhao ◽  
Kasunaidu Vechalapu ◽  
...  

The main motivation of this work is to design, fabricate, test, and compare an alternative, robust packaging approach for a power semiconductor current switch. Packaging a high voltage power semiconductor current switch into a single power module, compared to using separate power modules, offers cost, performance, and reliability advantages. With the advent of Wide-Bandgap (WBG) semiconductors, such as Silicon-Carbide, singular power electronic devices, where a device is denoted as a single transistor or rectifier unit on a chip, can now operate beyond 10kV–15kV levels and switch at frequencies within the kHz range. The improved voltage blocking capability reduces the number of series connected devices within the circuit, but challenges power module designers to create packages capable of managing the electrical, mechanical, and thermal stresses produced during operation. The non-sinusoidal nature of this stress punctuated with extremely fast changes in voltage and current, with respect to time, leads to non-ideal electrical and thermal performance. An optimized power semiconductor series current switch is fabricated using an IGBT (6500V/25A die) and SiC JBS Diode (6000V/10A), packaged into a 3D printed housing, to create a composite series current switch package (CSCSP). The final chosen device configuration was simulated and verified in an ANSYS software package. Also, the thermal behavior of such a composite package was simulated and verified using COMSOL. The simulated results were then compared with empirically obtained data, in order to ensure that the thermal ratings of the power devices were not exceeded; directly affecting the maximum attainable frequency of operation for the CSCSP. Both power semiconductor series current switch designs are tested and characterized under hard switching conditions. Special attention is given to ensure the voltage stress across the devices is significantly reduced.


Author(s):  
L. M. Boteler ◽  
S. M. Miner

A low order fast running parametric analysis tool, ParaPower, was used to arrive at the design for a novel high voltage module. The low order model used a 3D nodal network to calculate device temperatures and thermal stresses. The model assumed heat flux generated near the top surface of each device which is then conducted through the packaging structure and removed by convection. The temperature distribution is used to calculate thermal stresses throughout the package. This co-design modeling tool, developed for rectilinear geometries, allowed a rapid evaluation of the package temperatures and CTE induced stresses throughout the design space. However, once the final design configuration was determined a detailed finite element analysis was performed to validate the design. This paper compares the results obtained using ParaPower to the FEA, demonstrating the usefulness of the parametric analysis tool. Results for both temperature and CTE induced stress are compared. Two different stress models are evaluated. One based on the more traditional planar module design, which assumes a substantial substrate or heat spreader on which the module is assembled. The other model is less restrictive, eliminating the requirement for a substrate. The FEA modeling was performed using SolidWorks beginning with a thermal analysis followed by a stress analysis based on the temperature solution. Both the values and the trends of the temperatures and stresses were evaluated. The temperature results agreed to within 3.2°C. The trends and sign of the stresses were correctly predicted, but the magnitudes were not. One of the significant advantages of ParaPower is the speed of the computation. The run time for the parametric analysis was roughly two orders of magnitude faster than the FEA. This made it possible to build the model and complete the parametric analysis of roughly 500 runs in less than a day.


2018 ◽  
Vol 245 ◽  
pp. 09003
Author(s):  
Nikita Obraztsov ◽  
Vladimir Frolov ◽  
Mikhail Korotkikh ◽  
Ludmila Ushomirskaya

This article is devoted to the simulation of cold gas purge and flow taking into account the plasma arc in the channels of a single-phase two-channel high-voltage plasma torch with cylindrical electrodes. The results obtained in the process of modeling made it possible to simplify the model for further modeling, which will result in the distribution of velocities, temperatures and voltage drop on the arc depending on the time.


Author(s):  
Mohammad Rouhi Moghanlou ◽  
Hamed Saeidi Googarchin

In this paper, transient coupled thermo-mechanical finite element analysis of a three-dimensional model of braking pairs (brake disk and brake pads) is accomplished in order to estimate temperatures and stresses in brake disk during a braking cycle, including braking and cooling phases, and calculate fatigue life. A nonuniform distribution of temperatures is revealed on the surface of the brake disk, gradually generating surface hot spots and hot bands with temperatures up to 800 °C that lead to an uneven distribution of thermal stresses on the frictional surfaces. According to the simulations, variations in the circumferential stress, which is mainly responsible for the cracking of the brake disk, can reach up to 400 MPa in the hot spot areas, depending on the braking configurations. The numerical results are also used to estimate the fatigue life of brake disk using the Smith–Watson–Topper model. The numerical model demonstrates a high accuracy of fatigue life estimation when evaluated by prior experimental studies, signifying the effects of hot spots in reducing the service life of brake disk. Results of the fatigue life estimation show superiority to the analytical method both in the accuracy of calculation and detection of the failure location.


2013 ◽  
Vol 853 ◽  
pp. 641-645
Author(s):  
Cheng Xu ◽  
Jia Xiang Sun ◽  
Jin Gang Wang ◽  
Yi Luo

Based on the relationship between electrical equipment discharge and ultraviolet radiation, this paper proposed the use of UV pulse method to detect switchgear arcing faults. Switchgear protection system based on this new technique detects arcing faults by analyzing the ultraviolet produced by electric arc. The technique was implemented and tested in laboratory, and results verified the performance of the protection system; its capable to calculate the number of UV pulses and cut off faults fast and precisely.


2004 ◽  
Vol 126 (4) ◽  
pp. 485-495 ◽  
Author(s):  
Deepak Dhar ◽  
A. M. Sharan ◽  
J. S. Rao

This paper is concerned with life estimation of a turbine blade taking into account the combined effects of centrifugal stresses, vibratory stresses and thermal stresses. The stresses are determined by accounting for the rotor acceleration. The blades are subjected to aerodynamic excitation force obtained from thin cambered aerofoil theory under incompressible flow. The thermo-elastic forces are obtained from the three-dimensional non-linear heat transfer equations using the finite element analysis. The fatigue life is estimated using two well known theories, from the number of cycles in various blocks during start-up and shut-down periods of the turbine operation when the stresses peak.


2021 ◽  
Author(s):  
Walid Issa ◽  
Jose Ortiz-Gonzalez ◽  
Yihua Hu

<p>Low-gain buck converters will enable low voltage loads to access high voltage DC sources by a single stage converter at very low duty cycles. SiC MOSFETs are still limited to 1.7kV commercially and by seriesing them with adequate gate driving strategy, high voltages can be switched. This paper proposes a driving circuit for series SiC MOSFETs to block higher voltages. The driving circuit provides negative off-state voltage and turn on/off transitions in less than 100ns. The low-gain buck converter performance is assessed when using a single IGBT switch and series SiC MOSFETs. A simulation is implemented and shows the superiority of the proposed driven series SiC MOSFETs with distributed voltage and thermal stresses.</p>


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