An in-situ TEM investigation on microstructure evolution of Ni-25at.% Al thin films

2009 ◽  
Vol 478 (1-2) ◽  
pp. 240-245 ◽  
Author(s):  
P.Y. Li ◽  
H.M. Lu ◽  
S.C. Tang ◽  
X.K. Meng
Keyword(s):  
Thin Films ◽  
Microstructure Evolution ◽  
In Situ Tem

scholarly journals In Situ TEM Study of Microstructure Evolution of Zr-Nb-Fe Alloy Irradiated by 800 keV Kr2+ Ions

Materials ◽  
2017 ◽  
Vol 10 (4) ◽  
pp. 437
Author(s):  
◽  
◽  
◽  
◽  
◽  
...  
Keyword(s):  
Microstructure Evolution ◽  
In Situ Tem

In-Situ Tem Study of Copper-Tin Intermetallic Formation

1993 ◽  
Vol 323 ◽  
Author(s):  
Yujing Wu ◽  
Elizabeth G. Jacobs ◽  
Cyrus Pouraghabagher ◽  
Russell F. Pinizzotto
Keyword(s):  
Thin Films ◽  
Real Time ◽  
Diffusion Barrier ◽  
Solder Joints ◽  
Effective Diffusion ◽  
Copper Substrate ◽  
In Situ Tem ◽  
Intermetallic Formation ◽  
Intermetallic Growth

AbstractThe formation and growth of Cu6Sn5 and Cu3Sn at the interface of Sn-Pb solder/copper substrate are factors which affect the solderability and reliability of electronic solder joints. The addition of particles such as Ni to eutectic Sn-Pb solder drastically affects the activation energies of formation for both intermetallics. This study was performed to understand the mechanisms of intermetallic formation and the effects of Ni on intermetallic growth. Cu/Sn and Cu/Sn/Ni thin films were deposited by evaporation and observed in the TEM in real time using a hot stage. The diffusion of Sn through Cu6Sn5 and Cu3Sn followed by reaction with Cu must occur for intermetallic formation and growth to take place. Ni is an effective diffusion barrier which prevents Sn from diffusing into Cu.

In-Situ TEM Study of Plastic Stress Relaxation Mechanisms and Interface Effects in Metallic Films

2005 ◽  
Vol 875 ◽  
Author(s):  
Marc Legros ◽  
Gerhard Dehm ◽  
T. John Balk
Keyword(s):  
Thin Films ◽  
High Strength ◽  
Dislocation Motion ◽  
Dislocation Nucleation ◽  
Film Stress ◽  
In Situ Tem ◽  
Metallic Films ◽  
Cross Sectional ◽  
Thin Foils

AbstractTo investigate the origin of the high strength of thin films, in-situ cross-sectional TEM deformation experiments have been performed on several metallic films attached to rigid substrates. Thermal cycles, comparable to those performed using laser reflectometry, were applied to thin foils inside the TEM and dislocation motion was recorded dynamically on video. These observations can be directly compared to the current models of dislocation hardening in thin films. As expected, the role of interfaces is crucial, but, depending on their nature, they can attract or repel dislocations. When the film/interface holds off dislocations, experimental values of film stress match those predicted by the Nix-Freund model. In contrast, the attracting case leads to higher stresses that are not explained by this model. Two possible hardening scenarios are explored here. The first one assumes that the dislocation/interface attraction reduces dislocation mobility and thus increases the yield stress of the film. The second one focuses on the lack of dislocation nucleation processes in the case of attracting interfaces, even though a few sources have been observed in-situ.

scholarly journals In Situ TEM Study of Fatigue Crack Growth of Cu Thin Films Using a Modified Nanoindentation System

2016 ◽  
pp. 199-200
Author(s):  
Daniel Bufford ◽  
Douglas Stauffer ◽  
William Mook ◽  
S.A. Syed Asif ◽  
Brad Boyce ◽  
...  
Keyword(s):  
Thin Films ◽  
Fatigue Crack ◽  
Fatigue Crack Growth ◽  
Crack Growth ◽  
In Situ Tem

scholarly journals In situ TEM Studies of Ferroelectric Thin Films

2011 ◽  
Vol 17 (S2) ◽  
pp. 1362-1363
Author(s):  
P Gao ◽  
C Nelson ◽  
J Jokisaari ◽  
S Baek ◽  
C Eom ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Thin Films ◽  
In Situ Tem

Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.

scholarly journals Microstructure Evolution of Sol-gel Derived Oxide Nanostructures with In-Situ TEM

2010 ◽  
Vol 16 (S2) ◽  
pp. 350-351
Author(s):  
A Yan ◽  
VP Dravid
Keyword(s):  
Microstructure Evolution ◽  
Sol Gel ◽  
In Situ Tem ◽  
Oxide Nanostructures

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

In Situ TEM Analysis of Facet Motion in Gold Σ=3 {112} Boundaries

2001 ◽  
Vol 7 (S2) ◽  
pp. 324-325
Author(s):  
D.L. Medlin
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Microstructural Evolution ◽  
Experimental Studies ◽  
In Situ Tem ◽  
Tem Analysis ◽  
Computational Approaches ◽  
Boundary Properties ◽  
Boundary Curvature

Interfacial anisotropy complicates the prediction of microstructural evolution, particularly ir extreme cases for which the presence of facets and corners prevents the application of classical notions of grain-boundary curvature. Although there has been much effort at incorporating anisotropic grain-boundary properties, including faceted geometries, into computational approaches for microstructural evolution, at present our mechanistic understanding of the behavior of facets anc their junctions remains limited. In this presentation, we investigate the development of faceted boundaries between Σ=3 <111> oriented grains in epitaxially deposited gold thin films. This system is well suited tc experimental studies of facet evolution since the crystallography and structure of the boundaries is already well understood. It is well known that “double-positioning” of epitaxially aligned <111> grains on a surface of three-fold or six-fold symmetry results in a microstructure composed of grains in two twin-related (Σ=3) variants that are separated by facets running vertically through the film and forming 120 degree corners [1,2].

Ex situ and In situ TEM study of the relaxation of thin films by the modified frank-read mechanism

1992 ◽  
Vol 50 (2) ◽  
pp. 1342-1343
Author(s):  
F.K. LeGoues
Keyword(s):  
Thin Films ◽  
Strain Relaxation ◽  
Lattice Parameter ◽  
Buffer Layers ◽  
Ex Situ ◽  
In Situ Tem ◽  
Wide Range ◽  
Strong Resemblance ◽  
Image Position

In recent papers, we have described a novel mechanism for strain relaxation of thin films. Because of its strong resemblance to the well known Frank-Read sources of dislocations, it was called the “Modified-Frank-Read” (MFR) mechanism. This process was first observed during the growth of compositionally graded SiGe/Si(001) thin films, where it results in dislocations pile-ups being injected deep into an initially perfect substrate, leaving the topmost part of the film relaxed and nominally defect free. This last observation opens the door to a wide range of electronic applications since it makes it possible to grow electronic grade buffer layers of arbitrary composition and lattice parameter.The exact mechanism of the reproduction of dislocations was identified through tilting experiment and analysis of several compositionally graded SiGe/Si(001) structures. These also provided the important parameters controlling this mode of strain relaxation. We thus demonstrated that the MFR mechanism corresponds to the multiplication of “corner dislocations” (dislocations whose line forms a 90° angle) by simultaneous glide on two (111) planes.

Sign in / Sign up

Export Citation Format

Share Document